| Patent application number | Description | Published |
|---|
| 20090316937 | MONOLITHIC MICRO MAGNETIC DEVICE - A micro magnetic device having a body defining at least part of an enclosed chamber, a pole comprising a soft magnetic material within the chamber, and an electrically conductive coil positioned around the pole. A diaphragm integral with the body defines a top of the chamber opposite the pole. The diaphragm supports a permanent magnetic film. Multiple micro magnetic devices can be combined to form an array. The micro magnetic device may be, for example, a speaker or a sensor. The micro magnetic device may be made by MEMS or thin film techniques. | 12-24-2009 |
| 20100006916 | NON-VOLATILE MEMORY - Non-volatile memory is described. The non-volatile memory includes a substrate having a source region, a drain region and a channel region. The channel region separates the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A floating gate electrode is adjacent to the electrically insulating layer. The electrically insulating layer separates the floating gate electrode from the channel region. The floating gate electrode has a floating gate major surface. A control gate electrode has a control gate major surface and the control gate major surface opposes the floating gate major surface. A vacuum layer or gas layer at least partially separates the control gate major surface from the floating gate major surface. | 01-14-2010 |
| 20100090687 | DOMAIN WALL MOVEMENT ON MAGNETIC STRIP TRACKS - Magnetic shift tracks or magnetic strips, to which application of a rotating magnetic field or by rotation of the strip itself allows accurate determination of domain wall movement. One particular embodiment is a method of determining a position of a domain wall in a magnetic strip. The method includes applying a rotating magnetic field to the magnetic strip, the magnetic field rotating around a longitudinal axis of the magnetic strip, and after applying the magnetic field, determining a displacement of the domain wall to a second position. | 04-15-2010 |
| 20100103716 | Non-Volatile Memory with Metal-Polymer Bi-Layer - A resistive memory cell that includes a metal-polymer bi-layer proximate a CMOS gate. The memory cell has a substrate having a source contact connected to a source line and a drain contact connected to a drain line, a CMOS gate proximate the substrate electrically connecting the source contact and the drain contact, the bi-layer adjacent the CMOS gate, the bi-layer comprising a thin metal layer and a polymer layer, and a word line connected to the bi-layer. | 04-29-2010 |
| 20100104115 | MICRO MAGNETIC SPEAKER DEVICE WITH BALANCED MEMBRANE - A micro magnetic device with a micro magnetic speaker unit having a first element, a second element, and a membrane therebetween. Each of the elements comprises a body, a pole of soft magnetic material, an electrically conductive coil positioned around the pole, and a permanent magnet connected to the membrane. The first element and the second element are magnetically identical. A plurality of speaker units can be combined to provide a speaker array. | 04-29-2010 |
| 20100124352 | MICRO MAGNETIC DEVICE WITH MAGNETIC SPRING - A micro magnetic device having a body defining at least part of an enclosed chamber, the body comprising a first sidewall and a second sidewall. A pole comprising a soft magnetic material is within the chamber and an electrically conductive coil is positioned around the pole. A diaphragm is connected to the first sidewall and a permanent dipole magnet is connected to the second sidewall at a first end and to the diaphragm at a second end. The dipole magnet is offset centrally from the pole. The diaphragm may also be offset centrally from the first pole. The micro magnetic device may be made by MEMS or thin film techniques. | 05-20-2010 |
| 20100219156 | THREE-DIMENSIONAL MAGNETIC STRUCTURE FOR MICROASSEMBLY - Micro structures and methods for creating complex, 3-dimensional magnetic micro components and their application for batch-level microassembly. Included is a method for making complex, 3-dimensional magnetic structures by depositing a first photoimageable magnet/polymer material on a substrate and patterning to form at least one first active magnetic area and at least one first sacrificial area, then depositing a second photoimageable magnet/polymer material and patterning to form at least one second active magnetic area and at least one second sacrificial area, and then removing the first sacrificial area and the second sacrificial area. Also included is a micro structure self assembly method, the method including providing a substrate having at least one magnetic receptor site, and engaging a 3-dimensional magnetic micro structure having a magnetic micro component with the substrate by aligning the magnetic micro component with the magnetic receptor site. | 09-02-2010 |
| 20110008632 | SELF-ALIGNED WAFER BONDING - A wafer article includes a substrate, two or more hydrophilic areas disposed on the substrate, hydrophobic areas surrounding the hydrophilic areas, and a eutectic bonding material disposed on the substrate. A wafer apparatus including two wafers having complimentary hydrophilic regions and eutectic bonding material is disclosed and a method of forming a bonded wafer articles is disclosed. | 01-13-2011 |
| 20110059605 | METHODS OF FORMING NON-VOLATILE MEMORY - Methods of forming non-volatile memory is described. The non-volatile memory includes a substrate having a source region, a drain region and a channel region. The channel region separates the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A floating gate electrode is adjacent to the electrically insulating layer. The electrically insulating layer separates the floating gate electrode from the channel region. The floating gate electrode has a floating gate major surface. A control gate electrode has a control gate major surface and the control gate major surface opposes the floating gate major surface. A vacuum layer or gas layer at least partially separates the control gate major surface from the floating gate major surface. | 03-10-2011 |
