Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Jun Yamashita
Jun Yamashita, Kyoto JP
| Patent application number | Description | Published |
|---|---|---|
| 20110104122 | EFFICIENT PRODUCTION AND USE OF HIGHLY CARDIOGENIC PROGENITORS AND CARDIOMYOCYTES FROM EMBRYONIC AND INDUCED PLURIPOTENT STEM CELLS - This invention relates to a method for producing cardiomyocytes and/or cardiac progenitor cells, comprising culturing an induced pluripotent stem (iPS) cell or embryonic stem (ES) cell, which has been differentiated into a mesoderm cell, in the presence of cyclosporin-A. | 05-05-2011 |
Jun Yamashita, Kariya-City JP
| Patent application number | Description | Published |
|---|---|---|
| 20110057059 | INJECTOR - An injector includes a housing, a fixed core, a movable core, a valve member, and a resilient member pressing the valve member toward a nozzle hole. An inner peripheral surface of the housing axially guides an outer peripheral surface of the movable core. The inner peripheral surface and the outer peripheral surface define an outer clearance therebetween. The valve member includes a shaft-shaped portion and a stopper portion, which contacts the movable core and has a stopper inclined surface. An outer peripheral surface of the shaft-shaped portion and an inner peripheral surface of an insertion hole of the movable core define an inner clearance therebetween. The stopper inclined surface inclines radially inward of the shaft-shaped portion axially toward the nozzle hole. An axial clearance is formed between the stopper inclined surface and the movable core radially outward of a contact portion between the stopper inclined surface and the movable core. | 03-10-2011 |
Jun Yamashita, Hyogo-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20110024048 | PLASMA PROCESSING APPARATUS - In a plasma oxidation processing apparatus ( | 02-03-2011 |
| 20110222038 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PLACING TABLE - A substrate processing apparatus, for performing a plasma process to a substrate (W) in a processing container held in a vacuum state, has a substrate placing table ( | 09-15-2011 |
Jun Yamashita, Hyogo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090029564 | PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD - In a plasma oxidation treatment apparatus | 01-29-2009 |
| 20090041568 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PLACING TABLE USED FOR SAME, AND MEMBER EXPOSED TO PLASMA - A substrate table includes a substrate table main body provided with a heater embedded therein and having an upper surface serving as a heating face for heating a target substrate, and lifter pins inserted in the substrate table main body and configured to be moved up and down. Recessed portions are formed in the heating face of the substrate table main body at positions corresponding to the lifter pins and have a bottom lower than the heating face. Each of the lifter pins includes a lifter pin main body and a head portion formed at a distal end of the lifter pin main body and having a diameter larger than the lifter pin main body, the head portion being formed to correspond to each recessed portion and to be partly accommodated in the recessed portion. The head portion has a head portion upper end for supporting the target substrate and a head portion lower surface opposite to the head portion upper end. The lifter pins are movable between a first state where the head portion lower surface engages with the bottom of the recessed portion, and a second state where the head portion lower surface separates upward from the bottom of the recessed portion. | 02-12-2009 |
| 20090065146 | PLASMA PROCESSING APPARATUS - Gas delivery ports | 03-12-2009 |
| 20090065486 | PLASMA TREATMENT APPARATUS, AND SUBSTRATE HEATING MECHANISM TO BE USED IN THE APPARATUS - A plasma processing apparatus includes a chamber configured to accommodate a target substrate; a plasma generation mechanism configured to generate plasma inside the chamber; a process gas supply mechanism configured to supply a process gas into the chamber; an exhaust mechanism connected to the chamber to exhaust gas from inside the chamber; a table configured to place the target substrate thereon inside the chamber, the table including a table main body and a heating element disposed in the main body to heat the substrate; a support portion that supports the substrate table; a fixing member that fixes the support portion to the chamber; and an electrode configured to supply a power to the heating element, wherein the heating element and the electrode are made of an SiC-containing material, the electrode is fixed to the fixing member, extends through the support portion, and is connected to the heating element at a distal end, and an electrode sheath member made of a quartz-containing insulative material envelops the electrode except for the distal end, and extends through a portion of the substrate table below the heating element, the support portion, and the fixing member. | 03-12-2009 |
| 20100012275 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus including an essentially cylindrical chamber, which is airtight and grounded. The antenna unit is disposed on top of the chamber. The chamber has a divisible structure formed of an essentially cylindrical housing and a cylindrical chamber wall connected to the housing from above and surrounding a process space. The chamber wall is detachable. | 01-21-2010 |
| 20100239756 | PLASMA PROCESSING APPARATUS AND GAS EXHAUST METHOD - A plasma processing apparatus is provided for performing plasma processing to a substrate to be processed. The plasma processing apparatus is provided with a processing chamber | 09-23-2010 |
| 20100291319 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus for plasma-processing a target substrate is provided. The plasma processing apparatus includes a metallic processing container forming a processing space in which a plasma process is performed, and a substrate mounting table provided in the processing space to mount a target substrate thereon, a quartz member which shields a sidewall of the metallic processing container from the processing space and whose lower end extends to a position lower than a substrate mounting surface of the substrate mounting table, an annular member which is made of quartz and is provided between a bottom surface of the quartz member and a bottom wall of the metallic processing container to shield the bottom wall of the metallic processing container from the processing space, and a processing gas inlet part for introducing a processing gas into the processing space from a vicinity of an outer periphery of the substrate mounting table. | 11-18-2010 |
Jun Yamashita, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20100003202 | Ultraviolet screening agent for cosmetics and cosmetics using the same - An ultraviolet screening agent for cosmetics, including polymer-coated metal oxide fine particles produced by coating, with silica as a first layer, the surface of each of at least one kind of metal oxide fine particles selected from the group consisting of zinc oxide fine particles, titanium oxide fine particles, cerium oxide fine particles, zirconium oxide fine particles, and iron oxide fine particles, a primary particle diameter of which fine particles is not smaller than 1 nm and not greater than 100 nm, and coating the outside of the first layer with a polymer as a second layer; and cosmetics using the ultraviolet screening agent. | 01-07-2010 |
Jun Yamashita, Amagasaki-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110174441 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a Y | 07-21-2011 |
| 20110253311 | SUBSTRATE PROCESSING APPARATUS FOR PERFORMING PLASMA PROCESS - A substrate processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate. The apparatus includes a gas feed passage configured to supply a process gas into the process container and an exhaust passage configured to exhaust gas from inside the process container. The apparatus further includes a plasma generation mechanism configured to generate plasma of the process gas inside the process container and a metal component to be exposed to plasma inside the process container. The metal component is provided with a silicon film that coats at least a portion thereof to be exposed to plasma and to suffer an intense electric filed generated thereabout. | 10-20-2011 |
Jun Yamashita, Nirasaki City JP
| Patent application number | Description | Published |
|---|---|---|
| 20120067845 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion | 03-22-2012 |