| Patent application number | Description | Published |
|---|
| 20080316749 | PHOTONIC CRYSTAL OPTICAL CIRCUIT AND METHOD FOR CONTROLLING THE SAME - In an optical circuit including multi-dimensional photonic crystals, in which the optical circuit has a structure ( | 12-25-2008 |
| 20090142018 | Method for incidence of light into a photonic crystal optical waveguide - Disclosed in a method and a device in which a wave number of light in the waveguide mode of a photonic crystal optical waveguide is matched with that of the incident light, or a intensity ratio of electric field to magnetic field of the light in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light, and furthermore, in addition to the method above, the distribution of light intensity on the incident end surface in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light. A photonic crystal optical waveguide and channel optical waveguide are joined together, and the structure of the channel optical waveguide is wedge shaped in the joint section. | 06-04-2009 |
| 20090285522 | OPTICAL WAVEGUIDE, OPTICAL DEVICE, AND OPTICAL COMMUNICATION DEVICE - There is provided an optical device and an optical waveguide composed of a photonic crystal in which two optical waveguide modes that are orthogonal to a light propagation direction can be used, whereby design latitude is increased. | 11-19-2009 |
| 20100092132 | WAVEGUIDE CONNECTING STRUCTURE - A waveguide connecting structure includes a light branching element ( | 04-15-2010 |
| 20100320496 | SEMICONDUCTOR DEVICE - A semiconductor device comprises a semiconductor layer having a semiconductor integrated circuit, which is for processing an electrical signal, on a semiconductor substrate and an optical interconnect layer for transmitting an optical signal are joined. Control of modulation of the optical signal transmitted in the optical interconnect layer is performed by an electrical signal from the semiconductor layer, and an electrical signal generated by reception of light in the optical interconnect layer is transmitted to the semiconductor layer. The optical interconnect layer is disposed on the underside of the semiconductor substrate. | 12-23-2010 |
| 20110002582 | SEMICONDUCTOR OPTICAL INTERCONNECTION DEVICE AND SEMICONDUCTOR OPTICAL INTERCONNECTION METHOD - Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chip | 01-06-2011 |
| 20110012221 | SiGe PHOTODIODE - The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode. In order to solve said problems, according to the present invention, there is provided a vertical type pin-SiGe photodiode having a structure which is embedded in a groove formed in a part of a Si layer, in which a p-type or n-type doped layer is formed in a lower section of the groove, and in which a i-SiGe layer having a rectangular shape or a reverse tapered shape is formed on a layered structure formed by laminating a i-Si layer and a SiGe buffer layer on the lower section and the side wall of the groove. Further, in an optical connection section with a Si waveguide, impedance matching is effected by the layered structure composed of the i-Si layer and the SiGe buffer layer, and an upper metal layer is separated therefrom so that a poly-Si bridge structure is employed to electrically connect the upper metal layer therewith. | 01-20-2011 |
