| Patent application number | Description | Published |
|---|
| 20080240195 | Semiconductor optical device - In a semiconductor optical device, the first conductive type semiconductor region includes a first semiconductor portion and a second semiconductor portion. The first and second regions of the first semiconductor portion are arranged along a predetermined plane. The second semiconductor portion is provided on the first region of the first semiconductor portion. The active layer is provided on the second semiconductor portion of the first conductive type semiconductor region. The second conductive type semiconductor region is provided on the second region of the first semiconductor portion of the first conductive type semiconductor region. The side of the second semiconductor portion of the first conductive type semiconductor region, the top and side of the active layer, the second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction. The first distributed Bragg reflector portion includes first distributed Bragg reflector layers and second distributed Bragg reflector layers which are arranged alternately. The second distributed Bragg reflector portion includes third distributed Bragg reflector layers and fourth distributed Bragg reflector layers which are arranged alternately. The first conductive type semiconductor region, the active layer and the second conductive type semiconductor region are provided between the first distributed Bragg reflector portion and the second distributed Bragg reflector layers. | 10-02-2008 |
| 20090041075 | Surface-emitting type semiconductor optial device and method for manufacturing a surface-emitting type semiconductor optical device - A surface-emitting type semiconductor optical device includes: a first DBR portion of a first conductivity type provided on a GaAs substrate of the first conductivity type; an active layer provided on the first DBR portion; a second DBR portion provided on the active layer; a mesa-shaped conductive layer, which is provided between the first DBR portion and the second DBR portion, and which has, embedded therein, a current confinement portion for supplying current to the active layer; and a burying layer comprising single undoped GaInP and provided between the first DBR portion and the second DBR portion, on the side faces of the conductive layer. The resistivity of the undoped GaInP in the surface-emitting type semiconductor optical device is not lower than 10 | 02-12-2009 |
| 20090116526 | Semiconductor light-emitting device with a surface emitting type - A structure of an optical device with the surface emitting type and a method to form the optical device are disclosed, where the optical device is able to operate in high frequencies. The device provides a lower DBR structure, an active layer, a current injection layer, a current blocking layer, and an upper DBR structure on a GaAs substrate. The current blocking layer, horizontally putting the current injection layer therebetween, are an un-doped GaInP grown at a temperature between 500 to 600° C. and an un-doped AlGaInP grown at a temperature between 500 to 650° C. Because the un-doped current blocking layer shows the high resistivity for both electrons and holes, the parasitic capacitance in the current blocking layer becomes small. | 05-07-2009 |
| 20090203161 | SEMICONDUCTOR LASER DIODE WITH A RIDGE STRUCTURE BURIED BY A CURRENT BLOCKING LAYER MADE OF UN-DOPED SEMICONDUCTOR GROWN AT A LOW TEMPERATURE AND METHOD FOR PRODUCING THE SAME - The present invention provides a laser diode with a current blocking layer without a pn-junction. The laser diode includes a lower cladding layer, an active region and an upper cladding layer on the GaAs substrate in this order. The active region includes first and second regions. The upper cladding layer, which includes a ridge structure, locates on the first region, while, the current blocking region is on the second region of the active region so as to sandwich the ridge structure. The current blocking layer of the invention is made of one of un-doped GaInP and un-doped AlGaInP grown at a relatively low temperature and shows high resistance greater than 10 | 08-13-2009 |
| 20090219967 | Semiconductor optical device - To provide a semiconductor optical device which can restrain laser characteristics from being deteriorated by excitation in a substrate mode and can reduce the number of manufacturing steps. A semiconductor optical device comprises a first DBR layer, provided on a semiconductor substrate, having first and second semiconductor layers stacked alternately, a first cladding layer, an active layer, and a second cladding layer. The semiconductor substrate has a bandgap higher than that of the active layer. The first DBR layer is transparent to light having an emission wavelength, while the first and second semiconductor layers have respective refractive indices different from each other. Since the first DBR layer is thus provided between the semiconductor substrate and first cladding layer, the guided light reaching the lower end of the first cladding layer, if any, is reflected by the first DBR layer, whereby light can be restrained from leaking to the semiconductor substrate. This can avoid the substrate-mode excitation, thereby suppressing its resulting laser characteristic deteriorations such as destabilization of oscillation wavelengths. | 09-03-2009 |
| 20090323749 | LIGHT-EMITTING DEVICE WITH DOUBLE INTERMEDIATE LAYERS BETWEEN MESA STRIPE AND IRON-DOPED CURRENT BLOCKING LAYER - A light-emitting device that reduces the leak current flowing along the sides of the mesa stripe is disclosed. The device provides the mesa stripe, the current blocking layer, and two intermediate layers put between the mesa stripe and the current blocking layer. One of intermediate layers has the p-type conduction and comes in directly contact with the mesa stripe, while, the other intermediate layer has the n-type conduction and put between the former intermediate layer and the current blocking layer. The double intermediate layers prevent impurities in the current blocking layer and in the mesa stripe from inter-diffusing each other. | 12-31-2009 |
| 20100008392 | SEMICONDUCTOR OPTICAL DEVICE - An edge-emitting semiconductor optical device comprises a first cladding layer, an active layer, and a second cladding layer. The first cladding layer is provided on a semiconductor substrate. The active layer is provided on the first cladding layer. The semiconductor substrate has a higher band gap than that of the active layer. The first cladding layer includes a first light-absorbing layer and a first light-transmitting layer. The first light-absorbing layer has a lower band gap than that of the active layer, and the first light-transmitting layer has a higher band gap than that of the active layer. The second cladding layer is provided on the active layer. | 01-14-2010 |
| 20110091147 | INTEGRATED SEMICONDUCTOR OPTICAL DEVICE - An integrated semiconductor optical device includes first and second semiconductor optical devices. The first semiconductor optical device includes a first core layer, a first upper cladding layer including a first ridge portion, a first buried layer surrounding the first ridge portion, and a first adjusting layer provided between the first buried layer and the first ridge portion. The second semiconductor optical device includes a second core layer, a second upper cladding layer including a second ridge portion. The first semiconductor optical device and the second semiconductor optical device are arranged next to each other in a predetermined axis direction. The first core layer is joined to the second core layer by a butt joint method at a joint boundary between the first and second semiconductor optical devices. The first adjusting layer has a refractive index lower than a refractive index of the first core layer and higher than a refractive index of the first buried layer. The first adjusting layer extends in the predetermined axis direction. The first adjusting layer has a constant width from one end facet to the joint boundary. | 04-21-2011 |
| 20110091151 | INTEGRATED SEMICONDUCTOR OPTICAL DEVICE - An integrated semiconductor optical device includes first and second semiconductor optical devices. The first semiconductor optical device includes a first core layer, a first upper cladding layer including a first ridge portion, a first buried layer surrounding the first ridge portion, and a first adjusting layer provided between the first buried layer and the first ridge portion. The second semiconductor optical device includes a second core layer, a second upper cladding layer including a second ridge portion. The first semiconductor optical device and the second semiconductor optical device are arranged next to each other in a predetermined axis direction. The first core layer is joined to the second core layer by a butt joint method at a joint boundary between the first and second semiconductor optical devices. The first adjusting layer has a refractive index lower than a refractive index of the first core layer and higher than a refractive index of the first buried layer. The first adjusting layer extends in the predetermined axis direction. The first adjusting layer has a constant width from one end facet to the joint boundary. | 04-21-2011 |
