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| 20090080406 | System and Method for Multicast and Broadcast Synchronization in Wireless Access Systems - In a method for multicast and broadcast synchronization a data payload frame is generated from a data payload. A frame number is assigned to the data payload frame, wherein the frame number includes a generating time of the data payload frame. The data payload frame is distributed to a plurality of base stations in a wireless access system. The offset spans a travel time of a data payload frame from the controller to the plurality of base stations as well as a scheduling time and a multiplexing time. | 03-26-2009 |
| 20090196196 | CARRIER MANAGEMENT IN A WIRELESS COMMUNICATION DEVICE ASSIGNED A SET OF TWO OR MORE CARRIERS BY A WIRELESS COMMUNICATION NETWORK - Carrier management in a wireless communication device assigned a set of two or more carriers by a wireless communication network is disclosed. In one aspect, a method of carrier management includes transmitting data over the wireless communication network on one or more carriers forming a subset of active carriers from the set of carriers assigned to the wireless communication device. A first performance metric is determined indicative of operating conditions across the set of carriers assigned to the wireless communication device. A desired number of carriers on which to transmit data based on the first performance metric is determined. The desired number of carriers on which to transmit data is compared with the number of carriers in the subset of active carriers. The subset of active carriers is dynamically adjusted based on the comparison and subsequent data is transmitted over the wireless communication network using the adjusted subset of active carriers. | 08-06-2009 |
| 20090197632 | ALLOCATING TRANSMIT POWER AMONG TWO OR MORE CARRIERS ASSIGNED TO A WIRELESS COMMUNICATION DEVICE - Allocating transmit power among two or more carriers assigned to a wireless communication device is disclosed. In one aspect, a method of allocating transmit power includes determining a total amount of data transmit power available at the wireless communication device for data transmission over the carriers. An efficiency metric is determined for each carrier based on the carrier's transmission characteristics and a portion of the total data transmit power is allocated to each carrier based on each carrier's efficiency metric. | 08-06-2009 |
| 20100291882 | SYSTEM AND METHOD FOR RESOLVING CONFLICTS BETWEEN AIR INTERFACES IN A WIRELESS COMMUNICATION SYSTEM - A device and method for resolving conflicts between air interfaces in a wireless communication system are disclosed. In one embodiment, the method comprises communicating over a first air interface, receiving a request for resources for concurrent use in communicating over a second air interface, determining that a conflict does not exist between resources for the first air interface and at least a portion of the requested resources for the second air interface, and concurrently communicating over the first air interface using resources for the first air interface and communicating over the second air interface using at least a portion of the requested resources for the second air interface. | 11-18-2010 |
| 20100291884 | ALLOCATING TRANSMIT POWER AMONG MULTIPLE AIR INTERFACES - Systems and methods for allocating transmit power among multiple interfaces in a wireless communication system are disclosed. In one embodiment, the method comprises determining a first power level that is used for transmitting over a first air interface, determining a maximum power level available for transmitting over a second interface, comparing the first power level to the maximum power level, determining a second power level that is used for transmitting over the second air interface based on the comparison of the first power level to the maximum power level, and generating a power-based payload constraint based on the second power level. | 11-18-2010 |
| 20100291966 | SYSTEM AND METHOD FOR DROPPING AND ADDING AN AIR INTERFACE IN A WIRELESS COMMUNICATION SYSTEM - A device and method for dropping an air interface is disclosed. In one embodiment, the method comprises communicating over a first air interface and a second air interface, determining an operational parameter based at least in part on a characteristic of the first air interface, and dropping the second air interface based at least in part on the operational parameter. A device and method for adding an air interface is also disclosed. In one embodiment, the system comprises a processor configured to drop one of a plurality of concurrently established air interfaces and to subsequently determine that at least one predetermined criteria is met before attempting to add the air interface. | 11-18-2010 |
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| 20080227989 | Methyl 2,4,9-trithiaadamantane-7-carboxylate - Methyl 2,4,9-trithiaadamantane-7-carboxylate and a method for its manufacture is disclosed. The method reacts oxidized methyl triallyl acetate with a Lewis acid and a sulphuring agent. | 09-18-2008 |
| 20090066315 | DYNAMIC MODULATION FOR MULTIPLEXATION OF MICROFLUIDIC AND NANOFLUIDIC BASED BIOSENSORS - The present invention generally relates to a method for rapidly counting micron and/or submicron particles by passing such particles through any of a plurality of microfluidic channels simultaneously with an ion current and measuring the signal generated thereby. The present invention also generally relates to a device for practicing the method of the present invention. Some embodiments can include methods and/or devices for distinguishing between and counting particles in mixtures. Still other embodiments can include methods and/or devices for identifying and/or counting bioparticles and/or bioactive particles such as pollen. | 03-12-2009 |
| 20090238888 | RADICAL POLYMERIZATION METHOD AND PRODUCTS PREPARED THEREBY - In one embodiment, the present invention relates to a method for initiating radical polymerization of at least one monomer composition, the method comprising the steps of: supplying at least one monomer charge; and initiating radical polymerization of the at least one monomer charge via a hydrogen peroxide initiator and at least one polyamine co-initiator, wherein the method is carried out in an inverse-microemulsion, the inverse-microemulsion being a water/oil emulsion. | 09-24-2009 |
| 20090251693 | Analysis for Glucose Products Using Pyridinylboronic Acid - A method of analyzing a target analyte using laser excitation spectroscopy, mass spectroscopy, or colormetric analysis, where the analysis is enhanced by using pyridinylboronic acid. | 10-08-2009 |
| 20100072425 | 7-ETHYNYL-2,4,9-TRITHIAADAMANTANE AND RELATED METHODS - 7-ethynyl-2,4,9-trithiaadamantane and related methods are presented. Manufacturing 7-ethynyl-2,4,9-trithiaadamantane includes the steps of: (1) reducing alkyl 2,4,9-trithiaadamantane-7-carboxylate to produce 7-hydroxymethyl-2,4,9-trithiaadamantane; (2) oxidizing 7-hydroxymethyl-2,4,9-trithiaadamantane to produces 7-carbonyl-2,4,9-trithiaadamantane; and (3) reacting 7-carbonyl-2,4,9-trithiaadamantane with Ohira-Bestmann reagent to produces 7-ethynyl-2,4,9-trithiaadamantane. Molecular wires having 2,4,9-trithiaadamantane surface anchors are also disclosed. | 03-25-2010 |
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| 20080272516 | Successive Shrinking of Elastomers - a Simple Miniaturization Protocol to Produce Micro- and Nano-Structures - A stepwise contraction and adsorption nanolithography (SCAN) patterning process can shrink complex microstructures (produced by current microfabrication technology) into the nanometer region. The basis of SCAN is to transfer a pre-engineered microstructure onto a extended elastomer. This extended elastomer is then allowed to relax, reducing the microstructure accordingly. The new miniaturized structure is then used as a stamp to transfer the structure onto another stretched elastomer. Through iterations of this procedure, patterns of materials with pre-designed geometry are miniaturized to the desired dimensions, including sub-100 ran. The simplicity and high throughput capability of SCAN make the platform a competitive alternative to other micro- and nanolithography techniques for potential applications in multiplexed sensors, non-binary optical displays, biochips, nanoelectronics devices, and microfluidic devices. | 11-06-2008 |
| 20080317664 | Method for Gas Storage - This invention released a method for gas storage, characterized that gas is stored in the form of nanometer scale bubbles or gas layers on the solid-liquid surfaces. Said gas is hydrogen, the surface of the solid is planar solid surface, irregular solid surface, or porous material surface, especially highly oriented pyrolytic graphite (HOPG) surface, and the liquid is water, inorganic acid, inorganic salt, inorganic alkali, organic solution or colloid solution. The gas to be stored is produced by electrochemical method, inorganic reaction, organic reaction, biologic reaction or physical method. | 12-25-2008 |
| 20110140233 | Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS process - A parasitic vertical PNP bipolar transistor in BiCMOS process comprises a collector, a base and an emitter. The collector is formed by active region with p-type ion implanting layer (P type well in NMOS). It connects a P-type conductive region, which formed in the bottom region of shallow trench isolation (STI). The collector terminal connection is through the P-type buried layer and the adjacent active region. The base is formed by N type ion implanting layer above the collector which shares a N-type lightly doped drain (NLDD) implanting of NMOS. Its connection is through the N-type poly on the base region. The emitter is formed by the P-type epitaxy layer on the base region with heavy p-type doped, and connected by the extrinsic base region of NPN bipolar transistor device. This invention also includes the fabrication method of this parasitic vertical PNP bipolar transistor in BiCMOS process. And this PNP bipolar transistor can be used as the I/O (input/output) device in high speed, high current and power gain BiCMOS circuits. It also provides a device option with low cost. | 06-16-2011 |
| 20110140239 | High Voltage Bipolar Transistor with Pseudo Buried Layers - A high voltage bipolar transistor with shallow trench isolation (STI) comprises the areas of a collector formed by implanting first electric type impurities into active area and connected with pseudo buried layers at two sides; Pseudo buried layers which are formed by implanting high dose first type impurity through the bottoms of STI at two sides if active area, and do not touch directly; deep contact through field oxide to contact pseudo buried layers and pick up the collectors; a base deposited on the collector by epitaxial growth and in-situ doped by second electric type impurity, in which the intrinsic base touches local collector and extrinsic base is used for base pick-up; a emitter which is a polysilicon layer deposited on the intrinsic base and doped with first electric type impurities. This invention makes the depletion region of collector/base junction from 1D (vertical) distribution to 2D (vertical and lateral) distribution. The bipolar transistor's breakdown voltages are increased by only enlarge active critical dimension (CD). This is low-cost process. | 06-16-2011 |
| 20110156143 | Parasitic Vertical PNP Bipolar Transistor And Its Fabrication Method In Bicmos Process - This invention published a parasitic vertical PNP bipolar transistor in BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) process; the bipolar transistor comprises a collector, a base and an emitter. Collector is formed by active region with p-type ion implanting layer. It connects a p-type buried layer which formed in the bottom region of STI (Shallow Trench Isolation). The collector terminal connection is through the p-type buried layer and the adjacent active region. The base is formed by active region with n type ion implanting which is on the collector. Its connection is through the original p-type epitaxy layer after converting to n-type. The emitter is formed by the p-type epitaxy layer on the base region with heavy p-type doped. This invention also comprises the fabrication method of this parasitic vertical PNP bipolar in BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) process. And this PNP bipolar transistor can be used as the IO (Input/Output) device in high speed, high current and power gain BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) circuits. It also provides a device option with low cost. | 06-30-2011 |
| 20110156202 | Parasitic Vertical PNP Bipolar Transistor in BICMOS Process - A parasitic vertical PNP device in one type of BiCMOS process with shallow trench isolation (STI) comprises a collector formed by a p type impurity ion implantation layer inside active area, the bottom of collector connects to a p type buried layer, the p type pseudo buried layer is formed in bottom of shallow trench at both sides of collector active region through ion implantation, deep contacts through field oxide to connect pseudo buried layers and to pick up the collector; a base, formed by n type impurity ion implantation layer which sits on top of above stated collector; an emitter, a p type epitaxy layer lies above base and is connected out directly by a metal contact. Part of the p type epitaxy layer is converted into n type, which serves as connection path of base. Present invented PNP can be used as output device of BiCMOS high frequency circuit. It has a small device area and conduction resistance. | 06-30-2011 |
