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Jun Hee
Jun Hee Cho, Chungbuk KR
| Patent application number | Description | Published |
|---|---|---|
| 20120033118 | CMOS IMAGE SENSOR HAVING WIDE DYNAMIC RANGE AND SENSING METHOD THEREOF - Disclosed are a CMOS image sensor having a wide dynamic range and a sensing method thereof. Each unit pixel of the CMOS image sensor of the present invention includes multiple processing units, so that one shuttering section for the image generation of one image frame can be divided into multiple sections to separately shutter and sample the divided sections by each processing unit. Thus, the image sensor of the present invention enables many shuttering actions to be performed in the multiple processing units, respectively, and the multiple processing units to separately sample each floating diffusion voltage caused by the shuttering actions, thereby realizing a wide dynamic range. | 02-09-2012 |
Jun Hee Hong, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20110284885 | LIGHT EMITTIG DEVICE PACKAGE AND IMAGE DISPLAY APPARATUS INCLUDING THE SAME - Disclosed herein is a light emitting device package including first lead frame and second lead frame mounted on a package body, a light emitting device electrically connected to the first lead frame and second lead frame, to emit light of a first wavelength range, and an encapsulant surrounding the light emitting device, the encapsulant comprising phosphors to be excited by the light of the first wavelength range, thereby emitting light of a second wavelength range, and a resin having a refractive index of 1.1 to 1.3. | 11-24-2011 |
Jun Hee Kim, Gyeongsangnam-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20110018414 | REFRIGERATOR DRAWER AND REFRIGERATOR HAVING THE SAME - A refrigerator drawer and a refrigerator having the same are disclosed. The refrigerator drawer includes a storage box forwardly movable in a storage chamber provided in a cabinet; and a supporting member provided in the storage chamber to support the storage box; a guide member provided between the supporting member and the storage box, the guide member secured to the storage box, with relatively-movable with respect to the storage box and the supporting member, wherein the guide member is movably connected to the storage box and the guide member comprises at least one guiding slot configured to guide the relative-motion with the storage box. | 01-27-2011 |
| 20110018415 | REFRIGERATOR - A refrigerator is disclosed. An object of the present invention is to provide a refrigerator which can prevent a door configured to open and close a storage chamber sliding-movably from shaking rightward and leftward. A refrigerator includes a cabinet comprising a storage chamber, a door configured to open and close the storage chamber sliding-movably, and a guide member coupled to the door to prevent the door from shaking in a predetermined direction different from the direction of the door opening, the guide member sliding-movable with respect to a bottom surface of the storage chamber. | 01-27-2011 |
Jun Hee Kim, Seongnam City KR
| Patent application number | Description | Published |
|---|---|---|
| 20090213086 | TOUCH SCREEN DEVICE AND OPERATING METHOD THEREOF - A touch screen device and an operating method thereof are provided. The touch screen device is operated by touching a touch screen and moving a touch while the touch is maintained on the screen. A detector detects a touch point and a moving trajectory, and a controller selects a user command based on the detected touch point and moving trajectory. Then, when the user releases the touch, the controller executes the user command. User commands are classified and stored in a storage device and then executed by the controller based on operation modes associated with the device. A variety of user commands may be executed even though not all the menus are not displayed on the screen at once. Further, a user may cancel an erroneously entered user command quickly and easily. | 08-27-2009 |
Jun Hee Kim, Changwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090026906 | REFRIGERATOR - The present invention relates to a connection structure, for a refrigerator having a drawer door, of an anti-wobbling means which prevents the shaking phenomenon of a door, and there are advantages in that structural elements constituting the anti-wobbling means are easily connected to each other, and that a detachment between the structural elements is not occurred. | 01-29-2009 |
Jun Hee Kim, Sungnam-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20080312760 | Method and system for generating and processing digital content based on text-to-speech conversion - A method and system is provided for generating digital content using text-to-speech (TTS) conversion. A predetermined script is selected using a portable terminal or user personal computer (PC). A format for converting the selected script into an audio data file is determined. The selected script is generated into the audio data file according to the determined conversion format of the audio data file using a TTS engine provided to at least one of the user PC and a web server. | 12-18-2008 |
Jun Hee Lee, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20080237613 | Ac Light Emitting Device Having Photonic Crystal Structure and Method of Fabricating the Same - Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided. | 10-02-2008 |
| 20090170847 | Imidazopyridine Derivatives Inhibiting Protein Kinase Activity, Method for the Preparation Thereof and Pharmaceutical Composition Containing Same - The inventive imidazopyridine derivative can be used in a pharmaceutical composition for preventing or treating diseases such as diabetes, obesity, dementia, cancer, and inflammation, since it can efficiently inhibit the activities of several protein kinases including glycogen synthase kinase-3 (GSK-3), aurora kinase, extracellular signal-regulated kinase (ERK), protein kinase B (AKT), and the likes, to control signal transductions thereof. | 07-02-2009 |
| 20090311816 | AC LIGHT EMITTING DEVICE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME - Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided. | 12-17-2009 |
| 20110157523 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes: upper and lower substrates facing and spaced apart from each other; a liquid crystal layer between the upper and lower substrates; an upper polarizing plate on an outer surface of the upper substrate; and a lower polarizing plate on an outer surface of the lower substrate, wherein one of the upper and lower polarizing plates includes a first polarizing layer having a first optical axis and a first absorption axis perpendicular to each other, and an other of the upper and lower polarizing plates includes a second polarizing layer having a second optical axis and a second absorption axis parallel to each other. | 06-30-2011 |
Jun-Hee Cho, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20090163000 | METHOD FOR FABRICATING VERTICAL CHANNEL TRANSISTOR IN A SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming a sacrificial layer over a substrate, forming a contact hole in the sacrificial layer, forming a pillar to fill the contact hole. The pillar laterally extends up to a surface of the sacrificial layer and then the sacrificial layer is removed. The method further includes forming a gate dielectric layer over an exposed sidewall of the pillar, and forming a gate electrode over the gate dielectric layer. The gate electrode surrounds the sidewall of the pillar. | 06-25-2009 |
| 20110003450 | METHOD FOR MANUFACTURING SEMICONDUTOR DEVICE WITH STRAINED CHANNEL - A method for forming a semiconductor device includes forming a gate pattern over a silicon substrate, forming gate spacers over both sidewalls of the gate pattern, forming a dummy gate spacer over a sidewall of each one of the gate spacers, forming a recess region having inclined sidewalls extending in a direction to a channel region under the gate pattern by recess-etching the silicon substrate, filling the recess region with an epitaxial film, which becomes a source region or a drain region, through a selective epitaxial growth process, and removing the dummy gate spacer. | 01-06-2011 |
Jun-Hee Cho, Kyoungki-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20080305608 | Method for fabricating semiconductor device - A method for fabricating a semiconductor device, the method includes forming an etch stop layer and an insulation layer over a substrate having a first region and a second region, selectively removing the insulation layer and the etch stop layer in the first region to expose parts of the substrate, thereby forming at least two electrode regions on the exposed substrate and a resultant structure, forming a conductive layer over the resultant structure, removing the conductive layer in the second region, removing the insulation layer in the first region and the second region by using wet chemicals, and removing parts of the conductive layer, which formed between the at least two electrode regions in the first region, to form cylinder type electrodes in the first region. | 12-11-2008 |
Jun-Hee Cho, Ichon-Shi KR
| Patent application number | Description | Published |
|---|---|---|
| 20080230832 | TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device to enlarge a channel region is provided. The channel region is enlarged due to having pillar shaped sidewalls of a transistor. The transistor includes a fin active region vertically protruding on a substrate, an isolation layer enclosing a lower portion of the fin active region, and a gate electrode crossing the fin active region and covering a portion of the fin active region. An isolation layer is formed enclosing a lower portion of the fin active region and the isolation layer under the spacers is partially removed to expose a portion of the sidewalls of the fin active region. Subsequently, dry etching is performed to form the sidewalls having a pillar/neck. | 09-25-2008 |
| 20100096690 | SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL AREA - A semiconductor device includes an active region defining at least four surfaces, the four surfaces including first, second, third, and fourth surfaces, a gate insulation layer formed around the four surfaces of the active region, and a gate electrode formed around the gate insulation layer and the four surfaces of the active region. | 04-22-2010 |
| 20100105183 | SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL AREA AND FABRICATION METHOD THEREOF - A semiconductor device includes an active region defining at least four surfaces, the four surfaces including first, second, third, and fourth surfaces, a gate insulation layer formed around the four surfaces of the active region, and a gate electrode formed around the gate insulation layer and the four surfaces of the active region. | 04-29-2010 |
Jun-Hee Choi, Seongnam-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20120056237 | SEMICONDUCTOR COMPOUND STRUCTURE AND METHOD OF FABRICATING THE SAME USING GRAPHENE OR CARBON NANOTUBES, AND SEMICONDUCTOR DEVICE INCLUDING THE SEMICONDUCTOR COMPOUND STRUCTURE - A semiconductor compound structure and a method of fabricating the semiconductor compound structure using graphene or carbon nanotubes, and a semiconductor device including the semiconductor compound structure. The semiconductor compound structure includes a substrate; a buffer layer disposed on the substrate, and formed of a material including carbons having hexagonal crystal structures; and a semiconductor compound layer grown and formed on the buffer layer. | 03-08-2012 |
Jun-Hee Choi, Yongin-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20080230769 | Electronic device, field effect transistor including the electronic device, and method of manufacturing the electronic device and the field effect transistor - Provided is an electronic device, a field effect transistor having the electronic device, and a method of manufacturing the electronic device and the field effect transistor. The electronic device includes: a substrate; a first electrode and a second electrode which are formed in parallel to each other on the substrate, each of the first electrode and the second electrode comprising two electrode pads separated from each other and a heating element that connect the two electrode pads; a catalyst metal layer formed on the heating element of the first electrode; and a carbon nanotube connected to the second electrode by horizontally growing from the catalyst metal layer; wherein the heating elements are separated from the substrate by etching the substrate under the heating elements of the first and the second electrodes. | 09-25-2008 |
| 20090186148 | Method of fabricating organic light emitting device - In a method of forming a pattern of an organic light emitting device (OLED), an organic material is evaporated in a predetermined pattern by using a pre-patterned heating element, and the evaporated organic material is transferred to a substrate where the OLED is formed. The method includes preparing a template having a heating element in a pattern corresponding to a multilayered structure of an OLED including a plurality of functional layers; forming an organic layer on the heating element; drawing a substrate for the OLED near to the heating element of the template; and transferring the organic layer on the heating element to the substrate by evaporating the organic layer using the heating element. | 07-23-2009 |
| 20110124184 | Method of forming polysilicon, thin film transistor using the polysilicon, and method of fabricating the thin film transistor - A method of forming polysilicon, a thin film transistor (TFT) using the polysilicon, and a method of fabricating the TFT are disclosed. The method of forming the polysilicon comprises: forming an insulating layer on a substrate; forming a first electrode and a second electrode on the insulating layer; forming at least one heater layer on the insulating layer so as to connect the first electrode and the second electrode; forming an amorphous material layer containing silicon on the heater layer(s); forming a through-hole under the heater layer(s) by etching the insulating layer; and crystallizing the amorphous material layer into a polysilicon layer by applying a voltage between the first electrode and the second electrode so as to heat the heater layer(s). | 05-26-2011 |
Jun-Hee Kim, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20090249818 | DISPENSER RELATED TECHNOLOGY - A refrigerator, in which a dispensing unit moves between a received position and a dispensing position and a dispensing button unit moves, in a plane perpendicular to a surface of a door, between a stored position and an extended position. The dispensing button unit is configured to, in the extended position, control dispensing of content through the dispenser outlet in response to application of force to the dispensing button unit. The refrigerator also includes a driving unit that moves the dispensing unit from the received position to the dispensing position in response to user input and moves, in the plane to perpendicular to the surface of the door and simultaneously with moving the dispensing unit, the dispensing button unit from the stored position to the extended position in response to the user input. | 10-08-2009 |
| 20110294073 | PREPARING METHOD OF METAL POWDER AND METHOD OF MANUFACTURING INNER ELECTRODE OF MULTILAYER CERAMIC CAPACITOR USING THE SAME - The present invention provides a method for preparing metal powder, which includes the steps of: providing a base substrate; forming a pattern layer, having a concave-convex pattern of a predetermined shape, on the base substrate; forming a metal film separated from the pattern layer by the concave-convex pattern; and separating the metal film from the pattern layer, thereby naturally patterning the metal film in the predetermined shape, and a method for manufacturing inner electrodes of a multilayer ceramic capacitor using the same. | 12-01-2011 |
Jun-Hee Kim, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20100099463 | MOBILE TERMINAL HAVING TOUCH SENSOR-EQUIPPED INPUT DEVICE AND CONTROL METHOD THEREOF - A mobile terminal having a touch sensor-equipped input device and its control method are disclosed. The mobile terminal includes: a user input unit in which a keypad-printed layer and a touch sensor overlap with each other; and a controller that controls an operation mode of the user input unit in a touch pad and/or a touch keypad mode according to whether or not a cursor is in use. | 04-22-2010 |
| 20100100842 | MOBILE TERMINAL AND CONTROL METHOD THEREOF - Disclosed are a mobile terminal capable of executing web browsing with consideration of a user's convenience, and a control method thereof. The mobile terminal comprises: a wireless communication unit which accesses any web page; a display module for displaying the accessed web page; and a controller for automatically displaying popup windows in a virtual space when the accessed web page has any popup windows. Popup windows can be hidden at the time of web browsing, and the hidden popup windows can be displayed according to a user's necessity. This enhances the user's convenience. | 04-22-2010 |
Jun-Hee Lim, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20080197911 | CIRCUIT WITH FUSE/ANTI-FUSE TRANSISTOR WITH SELECTIVELY DAMAGED GATE INSULATING LAYER - A semiconductor integrated circuit is disclosed which includes a main transistor and at least one of a fuse transistor or an anti-fuse transistor (“fuse/anti-fuse transistor”). Each transistor type includes an active region formed in a semiconductor substrate, a gate stack comprising a gate insulation layer and a gate electrode sequentially formed on the active region, and source/drain regions separated across the gate stack, but the gate insulation layer of the fuse/anti-fuse transistor is selectively damaged during fabrication. | 08-21-2008 |
| 20080272430 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device includes an active region defined in a substrate, the active region having a trench extending below a surface of the substrate; an impurity region provided along a bottom surface and a lower sidewall of the trench, wherein an upper portion of the impurity region is spaced apart from the surface of the substrate and an upper portion of the trench; a gate insulating layer provided along an inner surface of the trench; and a gate electrode provided in the trench. | 11-06-2008 |
| 20090010086 | SENSE AMPLIFIER AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME - A sense amplifier circuit includes a current sense amplifier, a voltage sense amplifier, and an output stabilizing circuit. The current sense amplifier amplifies differential input currents to generate differential output voltages and provides the differential output voltages to a sense amplifier output line pair. The voltage sense amplifier is coupled to the sense amplifier output line pair to amplify the differential output voltages on the sense amplifier output line pair. The voltage sense amplifier is activated at the time later than a time of activation of the current sense amplifier. The output stabilizing circuit is coupled to the sense amplifier output line pair to stabilize the differential output voltages on the sense amplifier output line pair. The output stabilizing circuit has a positive input resistance. Accordingly, the sense amplifier circuit reduces power consumption and an occupied area on a semiconductor chip. | 01-08-2009 |
| 20100093141 | METHOD OF MANUFACTURING A TRANSISTOR AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - In a method of manufacturing a transistor, a gate structure is formed on a substrate. First impurities are implanted into the substrate to form an impurity region at an upper portion of the substrate adjacent to the gate structure. An epitaxial layer is formed on the impurity region. An insulation layer having an opening partially exposing the epitaxial layer is formed on the substrate. Second impurities are implanted into a portion of the epitaxial layer exposed by the opening. | 04-15-2010 |
| 20100127325 | Recessed channel transistors, and semiconductor devices including a recessed channel transistor - A recessed channel transistor, a semiconductor device including a transistor and methods of manufacturing the same are provided, the recessed channel transistor includes a gate structure, a second impurity region and a first impurity region. The gate structure may be formed on a substrate and filling a recess. The first impurity region, including first impurities, may be formed at a first upper portion of the substrate adjacent to the gate structure. The second impurity region, including second impurities, may be formed at a second upper portion of the substrate contacting the gate structure. The first impurity region may surround the second impurity region. The first impurities have a conductive type different from that of the second impurities. | 05-27-2010 |
Jun-Hee Son, Cheonon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100061117 | Backlight assembly and display device having the same - A backlight assembly and a display device including the backlight assembly are provided for one or more embodiments, where the display device is slim, lightweight, and requires low manufacturing costs because the device integrates a receiving container and a light generating unit cover member. According to an embodiment, the backlight assembly includes a first light generating unit, a wire electrically connected to the first light generating unit, a first fixing member including a groove to fix the first light generating unit and a wire outlet, and a receiving container comprising a light generating unit cover member. The first fixing member includes a protruding portion extending outwardly from the receiving container and the wire outlet formed on the protruding portion. | 03-11-2010 |