Patent application number | Description | Published |
20090161414 | Spin Torque Magnetic Memory and Offset Magnetic Field Correcting Method Thereof - An object of the present invention corrects fluctuation of a writing current between cells in a magnetic random access memory using spin torque magnetization reversal. The present invention includes a magneto-resistive effect element that is disposed between a bit line and a word line, a first variable resistance element that is connected to one end of the bit line, a second variable resistance element that is connected to the other end of the bit line, a first voltage applying unit that applies voltage to the first variable resistance element, and a second voltage applying unit that applies voltage to the second variable resistance element, when a writing operation is performed, an offset magnetic field is applied to a free layer of the magneto-resistive effect element by flowing a variable current between the first voltage applying unit and the second voltage applying unit based on a predetermined resistance value. | 06-25-2009 |
20090166773 | Magnetic memory cell and magnetic random access memory - Provided is a reliable nonvolatile memory with a lower power consumption. A ferromagnetic interconnection which is magnetized antiparallel or parallel to a magnetization direction of a ferromagnetic pinned layer in a giant magnetoresistive device or a tunnel magnetoresistive device constituting the magnetic memory cell, is connected to a ferromagnetic free layer with a non-magnetic layer being interposed in between, the ferromagnetic free layer serving as a recording layer. Thereby, the magnetization of the recording layer is switched by use of a spin transfer torque. | 07-02-2009 |
20100034014 | Magnetoresistive Element, Magnetic Memory Cell and Magnetic Random Access Memory Using the Same - Provided is a high-speed and ultra-low-power-consumption nonvolatile memory having a high temperature stability at a zero magnetic field. In a tunnel magnetoresistive film constituting a nonvolatile magnetic memory that employs a writing method using a spin-transfer torque, an insulating layer and a nonmagnetic conductive layer are stacked above a ferromagnetic free layer. | 02-11-2010 |
20110134689 | MAGNETIC RECORDING ELEMENT, MAGNETIC MEMORY CELL, AND MAGNETIC RANDOM ACCESS MEMORY - A low-power consumption non-volatile memory employing an electric field write magnetic recording element is provided. A multiferroic layer | 06-09-2011 |
20110233700 | MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY USING SAME - Disclosed are a magnetoresistance effect element equipped with an magnesium oxide passivation layer, and a high-speed, ultra-low power consumption nonvolatile memory using said element. A tunnel magnetoresistance effect (TMR) film comprised of a ferromagnetic free layer, an insulation layer, and a ferromagnetic fixed layer is provided, and an MgO passivation layer is provided on the side walls of a protective layer and an orientation control layer, thus suppressing elemental diffusion of a tunnel magnetoresistance effect (TMR) element from each layer due to thermal processing at 350° or higher and obtaining a magnetic memory cell and magnetic random access memory having stable, high-output reading and a low current writing characteristics. Furthermore, when CoFeB is used in the ferromagnetic layer and MgO is used in the insulation layer, it is preferable that the MgO passivation layer have an (001) orientation. | 09-29-2011 |
20120012955 | MAGNETIC MEMORY - Provided is a magnetic random access memory to which spin torque magnetization reversal is applied, the magnetic random access memory being thermal stable in a reading operation and also being capable of reducing a current in a wiring operation. A magnetoresistive effect element formed by sequentially stacking a fixed layer, a nonmagnetic barrier layer, and a recording layer is used as a memory element. The recording layer adopts a laminated ferrimagnetic structure. The magnetic memory satisfies the expression M | 01-19-2012 |
20120160288 | THERMOELECTRIC CONVERSION DEVICE - A thermoelectric conversion device includes a Heusler alloy film having a structure of B | 06-28-2012 |
20130014798 | THERMOELECTRIC CONVERSION ELEMENTAANM NISHIDE; AkinoriAACI KokubunjiAACO JPAAGP NISHIDE; Akinori Kokubunji JPAANM Kurosaki; YosukeAACI HachiojiAACO JPAAGP Kurosaki; Yosuke Hachioji JPAANM Hayakawa; JunAACI HinoAACO JPAAGP Hayakawa; Jun Hino JPAANM Yabuuchi; ShinAACI MusashinoAACO JPAAGP Yabuuchi; Shin Musashino JPAANM Okamoto; MasakuniAACI TokyoAACO JPAAGP Okamoto; Masakuni Tokyo JP - A thermoelectric conversion element is provided as an element module with improved utility having an enhanced performance index and utilizing Fe | 01-17-2013 |
Patent application number | Description | Published |
20130263907 | THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION DEVICE, AND THERMOELECTRIC CONVERSION MODULE - Provided is a p-type thermoelectric conversion material achieving a low environment load and low costs and having high efficiency. A thermoelectric conversion device is constituted by raw materials existing in a great amount in nature by using Fe and S as main components. Further, since FeS | 10-10-2013 |
20140116985 | METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT - The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element. | 05-01-2014 |
20140209142 | THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION MODULE USING SAME - Provided is a thermoelectric conversion element having a greater Seebeck coefficient (S) than the conventional ones. In a thermoelectric conversion element: a nonmagnetic Heusler alloy film ( | 07-31-2014 |
20140345663 | THERMOELECTRIC DEVICE AND THERMOELECTRIC MODULE USING THE SAME - Provided are a thermoelectric device and a thermoelectric module having larger conversion efficiency than conventional ones. A thermoelectric device of the present invention includes a Heusler alloy material, and a pair of electrodes that takes out electromotive force according to a temperature gradient caused in the Heusler alloy material. Further, the dimensions of the Heusler alloy material are defined such that the conversion efficiency of the module is maximized according to an environment having a temperature difference, under which the Heusler alloy material is used. | 11-27-2014 |