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Jun Fujiki
Jun Fujiki, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100216550 | GAME DEVICE, GAME CONTROL METHOD, AND GAME CONTROL PROGRAM - A game device includes a shape data storage which stores data of an object disposed in a three-dimensional space, a first rendering unit which sets a point of view and a line of sight and renders the object by referencing data stored in the shape data storage, a viewpoint changing unit which receives a change instruction indicating a change of the point of view or line of sight and changes the point of view or line of sight. The viewpoint changing unit changes the point of view or line of sight to outside a predetermined range when the point of view or line of sight enters within the predetermined range. | 08-26-2010 |
| 20100240457 | GAME DEVICE, GAME CONTROL METHOD, AND GAME CONTROL PROGRAM - A game device includes a shape data storage which stores data of an object disposed in a three-dimensional space, a first rendering unit which sets a point of view and a line of sight and renders the object, a viewpoint changing unit which receives a change instruction indicating a change of the point of view or line of sight and changes the point of view or line of sight, and a character controller which moves a character along the outer surface of the object. The character controller allows the character to move between two-dimensional planes of objects rendered in such a manner that the objects are adjacent to each other in the two-dimensional planes generated by the first rendering unit, and the game device further includes a search unit which searches a set of objects lying within a predetermined range of distance in the two-dimensional plane, and changes the point of view or line of sight so that the searched objects can be rendered adjacently to each other in the two-dimensional plane. | 09-23-2010 |
Jun Fujiki, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090212346 | SEMICONDUCTOR MEMORY ELEMENT - A semiconductor memory element includes: a tunnel insulating film formed on a semiconductor substrate; a HfON charge storage film with Bevan clusters formed on the tunnel insulating film; a blocking film formed on the HfON charge storage film; and a gate electrode formed on the blocking film. | 08-27-2009 |
| 20100034023 | NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY, AND METHOD FOR OPERATING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT - According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film. | 02-11-2010 |
| 20100078704 | SEMICONDUCTOR STORAGE ELEMENT AND MANUFACTURING METHOD THEREOF - A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film. | 04-01-2010 |
Jun Fujiki, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20090086549 | METHOD FOR DRIVING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A method for driving a nonvolatile semiconductor memory device is provided. The nonvolatile semiconductor memory device has source/drain diffusion layers spaced from each other in a surface portion of a semiconductor substrate, a laminated insulating film formed on a channel between the source/drain diffusion layers and including a charge storage layer, and a gate electrode formed on the laminated insulating film, the nonvolatile semiconductor memory device changing its data memory state by injection of charges into the charge storage layer. The method includes, before injecting charges to change the data memory state into the charge storage layer: injecting charges having a polarity identical to that of the charges to be injected; and further injecting charges having a polarity opposite to that of the injected charges. | 04-02-2009 |
| 20090244984 | METHOD FOR DRIVING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A method for driving a nonvolatile semiconductor memory device is provided. The nonvolatile semiconductor memory device includes a semiconductor layer having a channel, a first insulating film provided on the channel, a floating electrode provided on the first insulating film, a second insulating film provided on the floating electrode, and a gate electrode provided on the second insulating film, and changes its data memory state by injection of charges into the floating electrode. The method includes to achieve a state in which charges having a first polarity are injected into the floating electrode: providing a first potential difference between the semiconductor layer and the gate electrode to inject charges having the first polarity into the second insulating film; subsequently providing a second potential difference between the semiconductor layer and the gate electrode to inject charges having a second polarity opposite to the first polarity into the second insulating film; and subsequently providing a third potential difference between the semiconductor layer and the gate electrode to inject charges having the first polarity into the floating electrode. | 10-01-2009 |
| 20100080062 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME - A nonvolatile semiconductor memory device includes: a semiconductor substrate including a first channel, and a source region and a drain region provided on both sides of the first channel; a first insulating film provided on the first channel; a charge retention layer provided on the first insulating film; a second insulating film provided on the charge retention layer; and a semiconductor layer including a second channel provided on the second insulating film, and a source region and a drain region provided on both sides of the second channel. | 04-01-2010 |
| 20100080065 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME - A nonvolatile semiconductor memory device includes a memory cell and a driving unit. The a memory cell has a semiconductor layer having, a channel, and a source region and a drain region provided on both sides of the channel; a first insulating film provided on the channel; a charge retention layer provided on the first insulating film; and a gate electrode provided on the charge retention layer. The driving unit applies a burst signal having a constant amplitude and a constant frequency between the gate electrode and the semiconductor layer and performs at least one of operations of programming and erasing charge on the charge retention layer. | 04-01-2010 |
Jun Fujiki, Fukui-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20090189476 | INTERPHASE INSULATING MEMBER AND ROTATING ELECTRIC MACHINE - An interphase insulating member allowing reduction in size of a rotating electric machine is provide. The interphase insulating member includes a flat portion interposed between and insulating neighboring two phases of coil ends, and a three-dimensional portion protruding from the flat portion and guiding the coil. On a surface of the flat portion, epoxy resin layer is provided as a reinforcing member. | 07-30-2009 |
Jun Fujiki, Echizen-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080258737 | Insulation Inspection Apparatus - An insulation inspection apparatus includes a chamber in which a stator with a winding can be stored, an electrode movable along the outer circumference of a coil end of the stator winding, a voltage application unit applying voltage between the coil end and electrode, a sensor unit sensing leakage current and/or voltage drop between the coil end and electrode, and a pressure reduction unit reducing the pressure in the chamber. | 10-23-2008 |
| 20090121565 | Stator of Alternating-Current Rotary Electric Machine and Method of Insulating Stator Winding of Alternating-Current Rotary Electric Machine - A neutral point terminal, which is formed by electrically connecting with each other a plurality of phases of coil windings included by an alternating-current rotary electric machine having the plurality of phases, is inserted into an insulating cover prefabricated into a bag shape to be fitted thereinto, and thereby insulated from the surroundings. As a result, an insulation distance of the neutral point terminal can be ensured by simple assembly work, while variations caused by the work can be reduced. | 05-14-2009 |