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Julien Gatineau
Julien Gatineau, Ibaraki JP
| Patent application number | Description | Published |
|---|---|---|
| 20080253948 | METHOD FOR THE RECYCLING AND PURIFICATION OF AN INORGANIC METALLIC PRECURSOR - Methods and apparatus for the recycling and purification of an inorganic metallic precursor. A first gaseous stream containing ruthenium tetroxide is provided, and transformed into a solid phase lower ruthenium oxide. This lower phase ruthenium oxide is reduced with hydrogen to form ruthenium metal. The ruthenium metal is contacted with an oxidizing mixture to produce a stream containing ruthenium tetroxide, and any remaining oxidizing compounds are removed from this stream through a distillation. | 10-16-2008 |
| 20090258144 | Heteroleptic Iridium Precursors To Be Used For The Deposition Of Iridium-Containing Films - The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: | 10-15-2009 |
| 20100034971 | METHOD FOR THE DEPOSITION OF A RUTHENIUM CONTAINING FILM - Organometallic compound of the formula (I): wherein: L is a non-aromatic cyclic unsaturated hydrocarbon ligand (L), having at least six cyclic carbon atoms, said cycle being unsubstituted or substituted, and X is either a non aromatic cyclic unsaturated hydrocarbon ligand identical or different from (L), having at least six cyclic carbon atoms said cycle being unsubstituted or substituted or a cyclic or acyclic conjugated alkadienyl hydrocarbon ligand having from five to ten carbons atoms, said hydrocarbon ligand being unsubstituted or substituted. | 02-11-2010 |
| 20100104755 | DEPOSITION METHOD OF TERNARY FILMS - Method for producing a metal-containing film by introducing a metal source which does not contain metal-C or metal-N—C s-bonds (for example, TaCl5, SEt2), a silicon precursor (for example, SiH(NMe2)3 or (SiH3)3N), a nitrogen precursor such as ammonia, a carbon source such as monomethylamine or ethylene and a reducing agent (for example, H2) into a CVD chamber and reacting same at the surface of a substrate to produce metal containing films in a single step. | 04-29-2010 |
| 20110020547 | HIGH DIELECTRIC CONSTANT FILMS DEPOSITED AT HIGH TEMPERATURE BY ATOMIC LAYER DEPOSITION - Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one alkaline earth metal precursor and at least one titanium containing precursor are provided, vaporized, and at least partly deposited onto the substrate to form a strontium and titanium or a strontium and titanium and barium containing film. | 01-27-2011 |
Julien Gatineau, Tsuchiura JP
| Patent application number | Description | Published |
|---|---|---|
| 20090028745 | RUTHENIUM PRECURSOR WITH TWO DIFFERING LIGANDS FOR USE IN SEMICONDUCTOR APPLICATIONS - Methods of forming a ruthenium containing film on a substrate with a ruthenium precursor which contains nitrogen and two differing ligands. | 01-29-2009 |
| 20090242852 | DEPOSITION OF TERNARY OXIDE FILMS CONTAINING RUTHENIUM AND ALKALI EARTH METALS - Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal. | 10-01-2009 |
| 20090299084 | TELLURIUM PRECURSORS FOR FILM DEPOSITION - Methods and compositions for depositing a tellurium containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate. | 12-03-2009 |
| 20090321733 | METAL HETEROCYCLIC COMPOUNDS FOR DEPOSITION OF THIN FILMS - Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate. | 12-31-2009 |
Julien Gatineau, Ibaraki-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20090232985 | METHOD OF FORMING SILICON OXIDE CONTAINING FILMS - A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 4000 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate. | 09-17-2009 |
Julien Gatineau, Tsuchiura-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090162973 | GERMANIUM PRECURSORS FOR GST FILM DEPOSITION - A method for depositing a germanium containing film on a substrate is disclosed. A reactor, and at least one substrate disposed in the reactor, are provided. A germanium containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Germanium is deposited onto the substrate through a deposition process to form a thin film on the substrate. | 06-25-2009 |