Patent application number | Description | Published |
20080253948 | METHOD FOR THE RECYCLING AND PURIFICATION OF AN INORGANIC METALLIC PRECURSOR - Methods and apparatus for the recycling and purification of an inorganic metallic precursor. A first gaseous stream containing ruthenium tetroxide is provided, and transformed into a solid phase lower ruthenium oxide. This lower phase ruthenium oxide is reduced with hydrogen to form ruthenium metal. The ruthenium metal is contacted with an oxidizing mixture to produce a stream containing ruthenium tetroxide, and any remaining oxidizing compounds are removed from this stream through a distillation. | 10-16-2008 |
20090258144 | Heteroleptic Iridium Precursors To Be Used For The Deposition Of Iridium-Containing Films - The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: | 10-15-2009 |
20100034971 | METHOD FOR THE DEPOSITION OF A RUTHENIUM CONTAINING FILM - Organometallic compound of the formula (I): wherein: L is a non-aromatic cyclic unsaturated hydrocarbon ligand (L), having at least six cyclic carbon atoms, said cycle being unsubstituted or substituted, and X is either a non aromatic cyclic unsaturated hydrocarbon ligand identical or different from (L), having at least six cyclic carbon atoms said cycle being unsubstituted or substituted or a cyclic or acyclic conjugated alkadienyl hydrocarbon ligand having from five to ten carbons atoms, said hydrocarbon ligand being unsubstituted or substituted. | 02-11-2010 |
20100104755 | DEPOSITION METHOD OF TERNARY FILMS - Method for producing a metal-containing film by introducing a metal source which does not contain metal-C or metal-N—C s-bonds (for example, TaCl5, SEt2), a silicon precursor (for example, SiH(NMe2)3 or (SiH3)3N), a nitrogen precursor such as ammonia, a carbon source such as monomethylamine or ethylene and a reducing agent (for example, H2) into a CVD chamber and reacting same at the surface of a substrate to produce metal containing films in a single step. | 04-29-2010 |
20110020547 | HIGH DIELECTRIC CONSTANT FILMS DEPOSITED AT HIGH TEMPERATURE BY ATOMIC LAYER DEPOSITION - Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one alkaline earth metal precursor and at least one titanium containing precursor are provided, vaporized, and at least partly deposited onto the substrate to form a strontium and titanium or a strontium and titanium and barium containing film. | 01-27-2011 |
Patent application number | Description | Published |
20090028745 | RUTHENIUM PRECURSOR WITH TWO DIFFERING LIGANDS FOR USE IN SEMICONDUCTOR APPLICATIONS - Methods of forming a ruthenium containing film on a substrate with a ruthenium precursor which contains nitrogen and two differing ligands. | 01-29-2009 |
20090242852 | DEPOSITION OF TERNARY OXIDE FILMS CONTAINING RUTHENIUM AND ALKALI EARTH METALS - Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal. | 10-01-2009 |
20090299084 | TELLURIUM PRECURSORS FOR FILM DEPOSITION - Methods and compositions for depositing a tellurium containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate. | 12-03-2009 |
20090321733 | METAL HETEROCYCLIC COMPOUNDS FOR DEPOSITION OF THIN FILMS - Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate. | 12-31-2009 |
20110206862 | Titanium Nitride Film Deposition by Vapor Deposition Using Cyclopentadienyl Alkylamino Titanium Precursors - Disclosed are cyclopentadienyl alkylamino titanium precursors selected from the group consisting of Ti(iPr | 08-25-2011 |
20110262660 | CHALCOGENIDE-CONTAINING PRECURSORS, METHODS OF MAKING, AND METHODS OF USING THE SAME FOR THIN FILM DEPOSITION - Disclosed are chalcogenide-containing precursors for use in the manufacture of semiconductor, photovoltaic, LCD-TFT, or flat panel type devices. Also disclosed are methods of synthesizing the chalcogenide-containing precursors and vapor deposition methods, preferably thermal ALD, using the chalcogenide-containing precursors to form chalcogenide-containing films. | 10-27-2011 |
20120021590 | Tellurium Precursors for Film Deposition - Methods and compositions for depositing a tellurium-containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium-containing precursor is provided and introduced into the reactor, which is maintained at a temperature ranging from approximately 20° C. to approximately 100° C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate. | 01-26-2012 |
20120070582 | DEPOSITION OF TERNARY OXIDE FILMS CONTAINING RUTHENIUM AND ALKALI EARTH METALS - Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal. | 03-22-2012 |
20120175751 | DEPOSITION OF GROUP IV METAL-CONTAINING FILMS AT HIGH TEMPERATURE - Disclosed are group IV metal-containing precursors and their use in the deposition of group IV metal-containing films{nitride, oxide and metal) at high process temperature. The use of cyclopentadienyl and imido ligands linked to the metal center secures thermal stability, allowing a large deposition temperature window, and low impurity contamination. The group IV metal (titanium, zirconium, hafnium)-containing fvm depositions may be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD. | 07-12-2012 |
20120231611 | DIHALIDE GERMANIUM(II) PRECURSORS FOR GERMANIUM-CONTAINING FILM DEPOSITIONS - Disclosed are GeX | 09-13-2012 |
20120276292 | METHOD OF FORMING SILICON OXIDE CONTAINING FILMS - A method of forming a silicon oxide film, comprising the steps of:
| 11-01-2012 |
20120308739 | METHODS FOR DEPOSITION OF ALKALINE EARTH METAL FLUORIDE FILMS - Disclosed are thermal and/or plasma-enhanced CVD, ALD, and/or pulse CVD processes to deposit alkaline earth metal fluoride-based films, such as MgF | 12-06-2012 |
20130040056 | HETEROLEPTIC IRIDIUM PRECURSORS TO BE USED FOR THE DEPOSITION OF IRIDIUM-CONTAINING FILMS - The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: | 02-14-2013 |
20130059078 | USE OF RUTHENIUM TETROXIDE AS A PRECURSOR AND REACTANT FOR THIN FILM DEPOSITIONS - Disclosed are atomic layer deposition methods using ruthenium-containing precursors to form ruthenium-containing films for use in the manufacture of semiconductor, photovoltaic, LCD-TFT, or flat panel type devices. | 03-07-2013 |
20130252438 | METHOD FOR THE DEPOSITION OF A RUTHENIUM-CONTAINING FILM - The invention concerns the use of the ruthenium-containing precursor having the formula | 09-26-2013 |
20130267082 | CHALCOGENIDE-CONTAINING PRECURSORS, METHODS OF MAKING, AND METHODS OF USING THE SAME FOR THIN FILM DEPOSITION - Disclosed are chalcogenide-containing precursors for use in the manufacture of semiconductor, photovoltaic, LCD-TFT1 or fiat panel type devices. Also disclosed a methods of synthesizing the chalcogenide-containing precursors and vapor deposition methods, preferably thermal ALD, using the chaicogenide-containing precursors to form chaicogenide-containing films. | 10-10-2013 |
20130295298 | TITANIUM-ALUMINUM ALLOY DEPOSITION WITH TITANIUM-TETRAHYDROALUMINATE BIMETALLIC MOLECULES - Disclosed are titanium-tetrahydroaluminates precursors, their method of manufacture, and their use in the deposition of titanium-aluminum-containing films. The disclosed precursors have the formulae Ti(AlH | 11-07-2013 |
20140119977 | METAL HETEROCYCLIC COMPOUNDS FOR DEPOSITION OF THIN FILMS - Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least | 05-01-2014 |
20140242298 | NICKEL BIS DIAZABUTADIENE PRECURSORS, THEIR SYNTHESIS, AND THEIR USE FOR NICKEL CONTAINING FILMS DEPOSITIONS - Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of nickel-containing films. The precursors have the general formula Ni(R-DAD) | 08-28-2014 |
20150056384 | METHOD FOR THE DEPOSITION OF A RUTHENIUM CONTAINING FILM USING ARENE DIAZADIENE RUTHENIUM(0) PRECURSORS - The invention concerns the use of ruthenium containing precursors having the formula (1) wherein R1, R2 . . . R10 are independently selected from H, C1-C4 linear, branched, or cyclic alkyl group, C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or trisalkyl), C1-C4 linear, branched, or cyclic alkylamino group, or a C1-C4 linear, branched, or cyclic fluoroalkyl group (totally fluorinated or not); for the deposition of a Ru containing film on a substrate. | 02-26-2015 |
20150111392 | CHALCOGENIDE-CONTAINING FILM FORMING COMPOSITIONS AND VAPOR DEPOSITION OF CHALCOGENIDE-CONTAINING FILMS - Disclosed are Chalcogenide-containing film forming compositions, methods of synthesizing the same, and methods of forming Chalcogenide-containing films on one or more substrates via vapor deposition processes using the Chalcogenide-containing film forming compositions. | 04-23-2015 |