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Julien Borghetti, Mountain View US

Julien Borghetti, Mountain View, CA US

Patent application numberDescriptionPublished
20090179240DEVICE FOR DETECTING/STORING ELECTROMAGNETIC BEAMS, METHOD FOR MAKING SAME, AND USE THEREOF AND IMAGER INCORPORATING SAME - The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact electrodes, an electrical conduction unit which is connected to the two contact electrodes and which is coated with a photosensitive polymeric coating capable of absorbing the beams, of detecting, of generating in response the loads detected by said unit and of storing said loads, and a gate electrode which is capable of controlling the electric current in the unit as well as spatially distributing the loads in said coating and which is separated from said unit by a gate dielectric. Said device is configured such that the conduction unit comprises at least one semiconductive nanotube or nanowire capable of supplying an electric signal representing a modification of the conductivity of the phototransistor having been exposed to a beam, and that the gate dielectric has a thickness and a permittivity ε, which satisfy ε07-16-2009
20110182107MEMRISTIVE DEVICE - A memristive routing device (07-28-2011
20110227030Memristor Having a Triangular Shaped Electrode - A memristor includes a first electrode having a triangular cross section, in which the first electrode has a tip and a base, a switching material positioned upon the first electrode, and a second electrode positioned upon the switching material. The tip of the first electrode faces the second electrode and an active region in the switching material is formed between the tip of the first electrode and the second electrode.09-22-2011
20110227045Voltage-Controlled Switches - A voltage-controlled switch (09-22-2011
20110241756FAST TIME-TAGGED EVENT DETECTION USING RESISTIVE SWITCHING DEVICES - A system for event detection uses a resistive switching device to record a detected event. The resistive switching device has a resistance adjustable by means of an applied voltage. The operation of the resistive switching device is controlled by a controller, which is configured to apply a switching voltage to the resistive switching device at a start time, and turn off the switching voltage in response to an event signal indicative of occurrence of an event. The resistance value of the resistive switching device resulting from the application of the switching voltage is indicative of the detection of the event and also the time of the occurrence of the event.10-06-2011
20110260134Thermally Stable Nanoscale Switching Device - A nanoscale switching device provides enhanced thermal stability and endurance to switching cycles. The switching device has an active region disposed between electrodes and containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. At least one of the electrodes is formed of conductive material having a melting point greater than 1800° C.10-27-2011
20110261608Self-Repairing Memristor and Method - A self-repairing memristor (10-27-2011
20110279135MEMRISTOR ADJUSTMENT USING STORED CHARGE - Methods and apparatus pertaining to memory resistors are provided. Electronic circuitry determines energy for changing a non-volatile resistance of a memristor from a present value to a target value. An electric charge corresponding to the energy is stored. An electric pulse is applied to the memristor using the stored charge. The newly adjusted resistance of the memristor is sensed and compared to the target value. Additional electric pulses can be applied in accordance with the comparison. Memristor adjustment by way of feedback control is thus contemplated by the present teachings.11-17-2011