Patent application number | Description | Published |
20090179240 | DEVICE FOR DETECTING/STORING ELECTROMAGNETIC BEAMS, METHOD FOR MAKING SAME, AND USE THEREOF AND IMAGER INCORPORATING SAME - The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact electrodes, an electrical conduction unit which is connected to the two contact electrodes and which is coated with a photosensitive polymeric coating capable of absorbing the beams, of detecting, of generating in response the loads detected by said unit and of storing said loads, and a gate electrode which is capable of controlling the electric current in the unit as well as spatially distributing the loads in said coating and which is separated from said unit by a gate dielectric. Said device is configured such that the conduction unit comprises at least one semiconductive nanotube or nanowire capable of supplying an electric signal representing a modification of the conductivity of the phototransistor having been exposed to a beam, and that the gate dielectric has a thickness and a permittivity ε, which satisfy ε | 07-16-2009 |
20110182107 | MEMRISTIVE DEVICE - A memristive routing device ( | 07-28-2011 |
20110227030 | Memristor Having a Triangular Shaped Electrode - A memristor includes a first electrode having a triangular cross section, in which the first electrode has a tip and a base, a switching material positioned upon the first electrode, and a second electrode positioned upon the switching material. The tip of the first electrode faces the second electrode and an active region in the switching material is formed between the tip of the first electrode and the second electrode. | 09-22-2011 |
20110227045 | Voltage-Controlled Switches - A voltage-controlled switch ( | 09-22-2011 |
20110241756 | FAST TIME-TAGGED EVENT DETECTION USING RESISTIVE SWITCHING DEVICES - A system for event detection uses a resistive switching device to record a detected event. The resistive switching device has a resistance adjustable by means of an applied voltage. The operation of the resistive switching device is controlled by a controller, which is configured to apply a switching voltage to the resistive switching device at a start time, and turn off the switching voltage in response to an event signal indicative of occurrence of an event. The resistance value of the resistive switching device resulting from the application of the switching voltage is indicative of the detection of the event and also the time of the occurrence of the event. | 10-06-2011 |
20110260134 | Thermally Stable Nanoscale Switching Device - A nanoscale switching device provides enhanced thermal stability and endurance to switching cycles. The switching device has an active region disposed between electrodes and containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. At least one of the electrodes is formed of conductive material having a melting point greater than 1800° C. | 10-27-2011 |
20110261608 | Self-Repairing Memristor and Method - A self-repairing memristor ( | 10-27-2011 |
20110279135 | MEMRISTOR ADJUSTMENT USING STORED CHARGE - Methods and apparatus pertaining to memory resistors are provided. Electronic circuitry determines energy for changing a non-volatile resistance of a memristor from a present value to a target value. An electric charge corresponding to the energy is stored. An electric pulse is applied to the memristor using the stored charge. The newly adjusted resistance of the memristor is sensed and compared to the target value. Additional electric pulses can be applied in accordance with the comparison. Memristor adjustment by way of feedback control is thus contemplated by the present teachings. | 11-17-2011 |
20110303890 | Electrically Actuated Device - An electrically actuated device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle, thereby forming a junction therebetween. A material is established on the first electrode and at the junction. At least a portion of the material is a matrix region. A current conduction channel extends substantially vertically between the first and second electrodes, and is defined in at least a portion of the material positioned at the junction. The current conduction channel has a controlled profile of dopants therein. | 12-15-2011 |
20110317469 | NON-VOLATILE SAMPLER - A non-volatile sampler including a row line for receiving an input signal to be sampled, the row line intersecting a number of column lines, non-volatile storage elements being disposed at intersections between the row line and the column lines; a bias voltage source connected to the column lines, the bias voltage source for selectively applying a bias voltage to at least one of the non-volatile storage elements to cause the at least one of the storage elements to store a sample of the input signal at the instance the bias voltage is applied. | 12-29-2011 |
20120014161 | Memristive Negative Differential Resistance Device - A memristive Negative Differential Resistance (NDR) device includes a first electrode adjacent to a memristive matrix, the memristive matrix including an intrinsic semiconducting region and a highly doped secondary region, a Metal-Insulator-Transition (MIT) material in series with the memristive matrix, and a second electrode adjacent to the MIT material. | 01-19-2012 |
20120032345 | MULTILAYER CIRCUIT - A multilayer circuit ( | 02-09-2012 |
20120063197 | SWITCHABLE JUNCTION WITH AN INTRINSIC DIODE FORMED WITH A VOLTAGE DEPENDENT RESISTOR - A switchable junction ( | 03-15-2012 |
20120127780 | MEMORY RESISTOR ADJUSTMENT USING FEEDBACK CONTROL - Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings. | 05-24-2012 |
20120249252 | OSCILLATOR CIRCUITRY HAVING NEGATIVE DIFFERENTIAL RESISTANCE - Circuitry is provided that closely emulates biological neural responses. Two astable multivibrator circuits (AMCs), each including a negative differential resistance device, are coupled in series-circuit relationship. Each AMC is characterized by a distinct voltage-dependant time constant. The circuitry exhibits oscillations in electrical current when subjected to a voltage equal to or greater than a threshold value. Various oscillating waveforms can be produced in accordance with voltages applied to the circuitry. | 10-04-2012 |