| Patent application number | Description | Published |
|---|
| 20090107626 | ADHESION IMPROVEMENT OF DIELECTRIC BARRIER TO COPPER BY THE ADDITION OF THIN INTERFACE LAYER - Embodiments described herein provide a method of processing a substrate. The method includes depositing an interface adhesion layer between a conductive material and a dielectric material such that the interface adhesion layer provides increased adhesion between the conductive material and the dielectric material. In one embodiment a method for processing a substrate is provided. The method comprises depositing an interface adhesion layer on a substrate comprising a conductive material, exposing the interface adhesion layer to a nitrogen containing plasma, and depositing a dielectric layer on the interface adhesion layer after exposing the interface adhesion layer to the nitrogen containing plasma. | 04-30-2009 |
| 20090236214 | TUNABLE GROUND PLANES IN PLASMA CHAMBERS - An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls. | 09-24-2009 |
| 20090305515 | METHOD AND APPARATUS FOR UV CURING WITH WATER VAPOR - Embodiments of the invention generally relate to a method and apparatus for curing dielectric material deposited in trenches or gaps in the surface of a substrate to produce a feature free of voids and seams. In one embodiment, the dielectric material is steam annealed while being exposed to ultraviolet radiation. In one embodiment, the dielectric material is further thermally annealed in a nitrogen environment. | 12-10-2009 |
| 20090314208 | PEDESTAL HEATER FOR LOW TEMPERATURE PECVD APPLICATION - A method and apparatus for providing power to a heated support pedestal is provided. In one embodiment, a process kit is described. The process kit includes a hollow shaft made of a conductive material coupled to a substrate support at one end and a base assembly at an opposing end, the base assembly adapted to couple to a power box disposed on a semiconductor processing tool. In one embodiment, the base assembly comprises at least one exposed electrical connector disposed in an insert made of a dielectric material, such as a plastic resin. | 12-24-2009 |
| 20090314211 | BIG FOOT LIFT PIN - Embodiments described herein generally provide a lift pin assembly having increased wafer placement accuracy, repeatability, reliability, and corrosion resistance. In one embodiment, a lift pin assembly for positioning a substrate relative to a substrate support is provided. The lift pin assembly comprises a lift pin comprising a pin shaft, a pin head coupled with a first end of the pin shaft for supporting the substrate, and a shoulder coupled with a second end of the pin shaft. The lift pin assembly further comprises a cylindrical body slidably coupled with the pin shaft and a locking pin for preventing the cylindrical body from sliding along the shaft, wherein the shoulder has a through-hole dimensioned to accommodate the locking pin. | 12-24-2009 |
| 20090314309 | METHOD AND SYSTEM FOR SUPPLYING A CLEANING GAS INTO A PROCESS CHAMBER - A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region. | 12-24-2009 |
| 20100012273 | Method and System for Supplying a Cleaning Gas Into a Process Chamber - A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region. | 01-21-2010 |
| 20100096569 | ULTRAVIOLET-TRANSMITTING MICROWAVE REFLECTOR COMPRISING A MICROMESH SCREEN - An ultraviolet-transmitting microwave reflector for a substrate processing chamber, comprises a micromesh screen extending across the metallic frame. In one version, the micromesh screen comprises at least one electroformed layer. A method of fabricating the microwave reflector comprises electroforming a metallic frame surrounding a micromesh screen such that the micromesh screen comprises an open area of greater than 80% of the total area. | 04-22-2010 |
| 20100285240 | APPARATUS AND METHOD FOR EXPOSING A SUBSTRATE TO A ROTATING IRRADIANCE PATTERN OF UV RADIATION - Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed. | 11-11-2010 |
| 20110034034 | DUAL TEMPERATURE HEATER - A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate. | 02-10-2011 |
| 20110147363 | MULTIFUNCTIONAL HEATER/CHILLER PEDESTAL FOR WIDE RANGE WAFER TEMPERATURE CONTROL - Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel. | 06-23-2011 |
