| Patent application number | Description | Published |
|---|
| 20090113359 | Model Based Microdevice Design Layout Correction - Shapes neighboring a potential manufacturing fault within a microdevice design layout are identified. Models are employed to determine the affect of the shapes upon the potential manufacturing fault. Possible adjustments to the shapes are modeled. The possible adjustments facilitating resolution of the potential manufacturing fault. | 04-30-2009 |
| 20090178018 | PRE-BIAS OPTICAL PROXIMITY CORRECTION - A pre-bias optical proximity correction (OPC) method allows faster convergence during OPC iterations, providing an initial set of conditions to edge fragments of a layout based on density conditions near the edge fragments. | 07-09-2009 |
| 20090271759 | CONTRAST-BASED RESOLUTION ENHANCEMENT FOR PHOTOLITHOGRAPHIC PROCESSING - A contrast-based resolution enhancing technology (RET) determines a distribution of contrast values for edge fragments in a design layout or portion thereof. Resolution enhancement is applied to the edge fragments in a way that increases the number of edge fragments having a contrast value that exceeds a predetermined threshold. | 10-29-2009 |
| 20100023916 | Model Based Hint Generation For Lithographic Friendly Design - In various implementations of the invention, a model of an optical proximity correction process is employed to determine potential adjustments to a layout design for a mask that might resolve potential errors an image resulting from application of the mask in an optical lithographic process. In various implementations of the invention, corrected mask shapes, such as for example optical proximity corrected mask shapes, and associated printed image contours are generated through use of a model. Subsequently, the associated printed image contour and a desired printed image contour may be used to determine various edge segment adjustments to the corrected mask shapes that would realize the desired printed image contour. In various implementations of the present invention, the model for generation of the corrected mask shapes and the associated printed image contour is a square kernel model. With various implementations of the invention, the kernel represents a grey scale map wherein each pixel of the map is generated based on the desired displacement relative to the displacement to be modeled. For example by application of linear regression techniques. As a result, printed image contours and corrected mask shapes may be generated based upon an input layout design, wherein potential adjustments to the mask may be determined based upon a desired printed image contour. | 01-28-2010 |
| 20110047519 | Layout Content Analysis for Source Mask Optimization Acceleration - The invention provides for the acceleration of a source mask optimization process. In some implementations, a layout design is analyzed by a pattern matching process, wherein sections of the layout design having similar patterns are identified and consolidated into pattern groups. Subsequently, sections of the layout design corresponding to the pattern groups may be analyzed to determine their compatibility with the optical lithographic process, and the compatibility of these sections may be classified based upon a “cost function.” With further implementations, the analyzed sections may be classified as printable or difficult to print, depending upon the particular lithographic system. The compatibility of various sections of a layout design may then be utilized to optimize the layout design during a lithographic friendly design process. For example, during the design phase, sections categorized as difficult to print may be flagged for further optimization, processing, or redesign. In further implementations, the difficult-to-print sections may be subjected to a source mask optimization process. Subsequently, the entire layout design may receive a conventional resolution enhancement treatment using the optimized source. | 02-24-2011 |
