Patent application number | Description | Published |
20130022912 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND - A radiation-sensitive resin composition includes a first polymer having a structural unit represented by a following formula (1), and a radiation-sensitive acid generator. R | 01-24-2013 |
20130022926 | RADIATION-SENSITIVE RESIN COMPOSITION - A radiation-sensitive resin composition includes a polymer and a photoacid generator. The polymer includes a first structural unit shown by a formula (a1), a second structural unit shown by a formula (a2), and a third structural unit having a lactone structure. A content of the first structural unit in the polymer being 50 mol % or more based on total structural units included in the polymer. The first structural unit is preferably a structural unit shown by a formula (a1-1). | 01-24-2013 |
20130053526 | POLYMER - A polymer includes a repeating unit shown by a following general formula (1). R | 02-28-2013 |
20130078571 | PHOTORESIST COMPOSITION, METHOD FOR PRODUCING PHOTORESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN - A photoresist composition includes a first polymer, a second polymer and a third polymer. The first polymer has a fluorine atom and a first structural unit that includes a hydrophilic group. The second polymer has a fluorine atom a second structural unit that includes an alkali-dissociable group. The third polymer has an acid-dissociable group. The first polymer, the second polymer and the third polymer are different with one another. It is preferred that the first structural unit is represented by a following formula, and the second structural unit is represented by a following formula (2). | 03-28-2013 |
20130078579 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ACID GENERATING AGENT AND COMPOUND - A radiation-sensitive resin composition includes an acid generating agent to generate a compound represented by a following formula (1) by irradiation with a radioactive ray. In the formula (1), R | 03-28-2013 |
20130084394 | INSULATION PATTERN-FORMING METHOD AND INSULATION PATTERN-FORMING MATERIAL - An insulation pattern-forming method includes forming an organic pattern on a substrate. A space defined by the organic pattern is filled with an insulating material. The organic pattern is removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured. An insulation pattern-forming method includes forming a first organic pattern on the substrate. A space defined by the first organic pattern is filled with an insulating material. An upper surface of the first organic pattern is exposed. A second organic pattern that comes in contact with the upper surface of the first organic pattern is formed. A space defined by the second organic pattern is filled with the insulating material. The first organic pattern and the second organic pattern are removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured. | 04-04-2013 |
20130084524 | COMPOSITION FOR FORMING LIQUID IMMERSION UPPER LAYER FILM AND METHOD FOR FORMING RESIST PATTERN - A composition for forming a liquid immersion upper layer film, includes a first polymer, a second polymer and a solvent. The first polymer includes a first structural unit having a group represented by a following formula (i). In the formula (i), n is an integer of 1 to 3, and R | 04-04-2013 |
20130084705 | METHOD FOR FORMING PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM - A method for forming a pattern includes providing a resist underlayer film on a substrate using a first composition for forming a resist underlayer film. The first composition includes a polymer having a structural unit represented by a following formula (1). In the formula (1), Ar | 04-04-2013 |
20130089817 | PHOTORESIST COMPOSITION AND RESIST PATTERN-FORMING METHOD - A photoresist composition includes a polymer that includes a first structural unit shown by a formula (1), and an acid generator. R | 04-11-2013 |
20130095428 | RADIATION-SENSITIVE RESIN COMPOSITION - A radiation-sensitive resin composition includes a compound represented by a following formula (1) and a base polymer. In the formula (1), R | 04-18-2013 |
20130098870 | METHOD FOR FORMING PATTERN - A method for forming a pattern includes providing a composition to form a resist underlayer film on a surface of a substrate to be processed. The composition contains a calixarene based compound having a group represented by a following formula (i) bound to at least a part of an aromatic ring or at least a part of a heteroaromatic ring of the calixarene based compound. The resist underlayer film on the surface of the substrate is treated with heat or an acid. A resist pattern is formed on a surface of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask to form the pattern on the substrate. The dry-etched resist underlayer film is removed from the substrate with a basic solution. | 04-25-2013 |
20130101942 | METHOD FOR FORMING RESIST PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM - A resist pattern-forming method capable of forming a resist pattern excellent in pattern collapse resistance in the case of development with the organic solvent in multilayer resist processes. The method has the steps of: (1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film; (2) providing a resist film on the resist underlayer film using a photoresist composition; (3) exposing the resist film; and (4) developing the exposed resist film using a developer solution containing no less than 80% by mass of an organic solvent, in which the composition for forming a resist underlayer film contains (A) a component that includes a polysiloxane chain and that has a carboxyl group, a group that can generate a carboxyl group by an action of an acid, an acid anhydride group or a combination thereof. | 04-25-2013 |
20130130179 | POLYSILOXANE COMPOSITION AND PATTERN-FORMING METHOD - A polysiloxane composition includes a polysiloxane, and a first compound. The first compound includes a nitrogen-containing heterocyclic ring structure, and a polar group, an ester group or a combination thereof. A pattern-forming method includes coating the polysiloxane composition on a substrate to be processed to provide a silicon-containing film. A resist composition is coated on the silicon-containing film to provide a resist coating film. The resist coating film is selectively irradiated with a radioactive ray through a photomask to expose the resist coating film. The exposed resist coating film is developed to form a resist pattern. The silicon-containing film and the substrate to be processed are sequentially dry etched using the resist pattern as a mask. | 05-23-2013 |
20130149644 | RADIATION-SENSITIVE COMPOSITION AND COMPOUND - A radiation-sensitive composition includes a photoacid generator represented by a general formula (1), and a solvent. Each R | 06-13-2013 |
20130153535 | RESIN COMPOSITION, RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM-FORMING METHOD AND PATTERN-FORMING METHOD - A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *—COO— or —NR | 06-20-2013 |
20130164695 | METHOD FOR FORMING PATTERN - A method for forming a pattern includes providing a first positive-working radiation-sensitive resin composition on a substrate to form a first resist layer. The first positive-working radiation-sensitive resin composition includes a crosslinking agent, a polymer containing an acid-unstable group and not containing a crosslinking group, a radiation-sensitive acid generator, and a solvent. The first resist layer is exposed selectively to radiation, and developed to form a first resist pattern. The first resist pattern is made inactive to radiation, or insolubilized in an alkaline developer or in a second positive-working radiation-sensitive resin composition. The second positive-working radiation-sensitive resin composition is provided on the substrate to form a second resist layer. The second resist layer is exposed selectively to radiation, and developed to form a second resist pattern in the space area of the first resist pattern. | 06-27-2013 |
20130183624 | RADIATION-SENSITIVE RESIN COMPOSITION - A radiation-sensitive resin composition includes a compound represented by a formula (1), and a polymer that serves as a base resin. R | 07-18-2013 |
20130189621 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND - A radiation-sensitive resin composition includes a polymer having a structural unit represented by a formula (I). In the formula (I), R | 07-25-2013 |
20130203000 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND RESIST PATTERN-FORMING METHOD - A radiation-sensitive resin composition includes a polymer component, a radiation-sensitive acid generating agent, and a nitrogen-containing compound having a ring structure. The polymer component includes, in an identical polymer or different polymers, a first structural unit represented by a formula (1) and a second structural unit represented by a formula (2). R | 08-08-2013 |