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Jousseaume, FR
Bernard Jousseaume, Talence FR
| Patent application number | Description | Published |
|---|---|---|
| 20100152477 | HETEROGENEOUS ORGANOTIN CATALYSTS - Supported heterogeneous organotin catalysts of the formula X1, X2, or X3: | 06-17-2010 |
| 20100174106 | HETEROGENEOUS ORGANOTIN CATALYSTS - Supported heterogeneous organotin catalysts of the formula X1, X2, or X3: | 07-08-2010 |
Cecile Jousseaume, Paris FR
| Patent application number | Description | Published |
|---|---|---|
| 20080222965 | BONDED ABRASIVE ARTICLE AND METHOD OF MAKING - A bonded abrasive article is provided which includes abrasive grains made of cubic boron nitride within a bond matrix including a silicate. The bonded abrasive further includes a reaction product at the interface between the abrasive grains and bond matrix comprising a transition metal nitride. | 09-18-2008 |
| 20080222967 | BONDED ABRASIVE ARTICLE AND METHOD OF MAKING - A bonded abrasive article is provided that includes abrasive grains within a bond matrix, the abrasive grains including cubic boron nitride (cBN) and the bond matrix including a polycrystalline ceramic phase. The bonded abrasive may have a Modulus of Rupture (MOR) of not less than about 40 MPa. Certain embodiments may have porosity, such as greater than about 5.0 vol %. | 09-18-2008 |
Vincent Jousseaume, Le Sappey En Chartreuse FR
| Patent application number | Description | Published |
|---|---|---|
| 20090155535 | Process for preparing thin layers of nanoporous dielectric materials - Process for preparing a thin layer of a nanoporous dielectric material with homogeneous porosity in which the following successive steps are performed: | 06-18-2009 |
| 20090181187 | PROCESS FOR MANUFACTURING PERMEABLE DIELECTRIC FILMS - The invention relates to a process for manufacturing a permeable dielectric film, which comprises: | 07-16-2009 |
| 20100273316 | METHOD FOR FABRICATING SILICON AND/OR GERMANIUM NANOWIRES - The invention relates to a method for fabricating silicon and/or germanium nanowires on a substrate, comprising a step of bringing a precursor comprising silicon and/or a precursor comprising germanium into contact with a compound comprising copper oxide present on the said substrate, by means of which growth of nanowires takes place. | 10-28-2010 |