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Jouichi
Atsushi Jouichi, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20110052740 | Skin Circulation-Improving Agent And Skin Temperature-Elevating Agent - Skin blood circulation is improved, skin temperature is increased, or shoulder stiffness or sensitivity to cold is prevented or improved by using, as an active ingredient, at least one of the members selected from the group consisting of an Arabian jasmine (matsurika, jasmin sambac) extract, a damask rose ( | 03-03-2011 |
Atushi Jouichi, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20110020516 | JASMINUM SAMBAC-LIKE FRAGRANCE COMPOSITION - The present invention provides a flavor and/or fragrance composition having a natural scent of | 01-27-2011 |
Kyoko Jouichi, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20110123580 | Cosmetic Material and Cosmetic Method for Touch-up - It is intended to provide a cosmetic composition suitable for touch-up that has both of such simplicity that anyone can easily use it, as with a face powder, and a natural, beautiful finish with a good coverage, as with a foundation, and to provide a cosmetic method using the same. The present invention provides a solid powdery cosmetic composition for touch-up comprising: a) 10 to 60% talc in a plate form having an average particle size D50 of 15 to 40 μm; b) 6 to 12% pigment-grade titanium oxide; and c) 6 to 9% oil, and a cosmetic method using the cosmetic composition. In the cosmetic composition of the present invention, the viscosity of the oil is preferably 100 cps or lower. | 05-26-2011 |
Takahide Jouichi, Ibaraki JP
| Patent application number | Description | Published |
|---|---|---|
| 20110012154 | LED ELEMENT AND METHOD FOR MANUFACTURING LED ELEMENT - Provided is a GaN-based LED element having a novel structure for improving output by increasing light extraction efficiency. A GaN-based LED element comprising: a semiconductor laminated structure in which an n-type GaN-based semiconductor layer is arranged on the side of a lower surface of a p-type GaN-based semiconductor layer having an upper surface and the lower surface, and a light emitting part comprising a GaN-based semiconductor is interposed between the layers; a p-side electrode formed on the upper surface of the p-type GaN-based semiconductor layer; and an n-side electrode electrically connected to the n-type GaN-based semiconductor layer, wherein the p-side electrode comprises a transparent conductive film comprising a window region serving as a window for extracting light generated in the light emitting part, and a flat section and a rough surface section formed by a roughening treatment are arranged to form a predetermined mixed pattern on the upper surface of the p-type GaN-based semiconductor layer covered with the window region of the transparent conductive film. | 01-20-2011 |