Patent application number | Description | Published |
20080210258 | SCRUBBER BOX AND METHODS FOR USING THE SAME - A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes. | 09-04-2008 |
20080216863 | METHODS AND APPARATUS FOR MONITORING THE ROTATION OF A SUBSTRATE DURING CLEANING - Systems, methods, and apparatus for monitoring rotation of a substrate during cleaning are disclosed. The invention may include a substrate cleaner adapted to support and clean a substrate; an optical source adapted to provide a light beam having a path within the substrate cleaner; and an optical sensor positioned along the path so as to receive the light beam from the optical source and adapted to detect an orientation feature on the substrate when the orientation feature traverses the path. The optical sensor includes an array of light detectors. Numerous additional aspects are disclosed. | 09-11-2008 |
20090004405 | Thermal Batch Reactor with Removable Susceptors - An apparatus and method for uniform heating and gas flow in a batch processing chamber are provided. The apparatus includes a quartz chamber body, removable heater blocks which surround the quartz chamber body, an inject assembly coupled to one side of the quartz chamber body, and a substrate boat having removable susceptors. In one embodiment, the boat may be configured with a plurality of susceptors to control substrate heating during batch processing. | 01-01-2009 |
20090025197 | METHODS AND APPARATUS FOR INSTALLING A SCRUBBER BRUSH ON A MANDREL - In a first aspect, an apparatus is provided for forming a scrubber brush assembly. The apparatus includes a mandrel adapted to be inserted into a scrubber brush so as to form a scrubber brush assembly, the mandrel having: a first end; a second end; and one or more position guides adjacent at least one of the first and second ends and adapted to position a scrubber brush on the mandrel. Numerous other aspects are provided. | 01-29-2009 |
20090025757 | LID FOR A SEMICONDUCTOR DEVICE PROCESSING APPARATUS AND METHODS FOR USING THE SAME - A method of reducing sticking of a door of a semiconductor device processing apparatus is provided. The method comprises providing rinsing fluid to a lid of a semiconductor devise processing chamber so as to rinse particulates therefrom; and sliding a door that is operatively coupled to the lid so as to move between a closed position wherein the door occludes an opening formed in the lid, and an open position wherein the door does not occlude the opening. Numerous other aspects are provided. | 01-29-2009 |
20090031511 | WAFER EDGE CLEANING - In a first aspect, an apparatus for cleaning a thin disk is provided. The apparatus includes a support roller for supporting a rotating wafer within a wafer cleaner. The support roller comprises a guide portion, for receiving an edge of a wafer, having an inclined surface comprising a low-friction material and adapted to allow the wafer edge to slide thereagainst; and an edge-trap portion for retaining the edge of the wafer and having a transverse surface comprising a high-friction material and adapted, when in communication with the edge of the wafer, to resist sliding thereagainst. Numerous other aspects are provided. | 02-05-2009 |
20090031516 | METHODS AND APPARATUS FOR INSTALLING A SCRUBBER BRUSH ON A MANDREL - In a first aspect, an apparatus is provided for forming a scrubber brush assembly. The apparatus includes a mandrel adapted to be inserted into a scrubber brush so as to form a scrubber brush assembly, the mandrel having: a first end; a second end; and one or more position guides adjacent at least one of the first and second ends and adapted to position a scrubber brush on the mandrel. Numerous other aspects are provided. | 02-05-2009 |
20090032071 | LID FOR A SEMICONDUCTOR DEVICE PROCESSING APPARATUS AND METHODS FOR USING THE SAME - A lid for a semiconductor device processing apparatus is provided. The lid comprises a cover having an opening and a wall formed around the opening, the wall adapted to prevent fluid present on the lid from entering a body of the processing apparatus through the opening, and one or more cover edges including one or more edge walls; an outer door adapted to prevent fluid from entering the body of the processing apparatus through the opening of the cover, wherein the outer door interfaces with the wall formed around the opening and the one or more edge walls; and an inner door coupled to the outer door and adapted to prevent fluid from exiting the body of the processing apparatus through the opening of the cover. Numerous other aspects are provided. | 02-05-2009 |
20090044831 | WAFER EDGE CLEANING - In a first aspect, a method of cleaning an edge of a wafer is provided. The method comprises providing an edge cleaning roller having a first inclined frictional surface for cleaning an edge corner of a wafer rotating within a first plane; and causing the edge cleaning roller to rotate within a second plane at an angle to the first plane while the inclined frictional surface contacts and cleans the edge corner. Numerous other aspects are provided. | 02-19-2009 |
20090078198 | CHAMBER COMPONENTS WITH INCREASED PYROMETRY VISIBILITY - The present invention generally provides method and apparatus for non-contact temperature measurement in a semiconductor processing chamber. Particularly, the present invention provides methods and apparatus for non-contact temperature measurement for temperature below 500° C. One embodiment of the present invention provides an apparatus for processing semiconductor substrates. The apparatus comprises a target component comprises a material with higher emissivity than the one or more substrates. | 03-26-2009 |
20090209112 | MILLISECOND ANNEALING (DSA) EDGE PROTECTION - A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy toward a surface of the substrate. An energy blocker is provided to block at least a portion of the energy directed toward the substrate. The blocker prevents damage to the substrate from thermal stresses as the incident energy approaches an edge of the substrate. | 08-20-2009 |
20090314762 | Multi-Zone Resistive Heater - Apparatus, reactors, and methods for heating substrates are disclosed. The apparatus comprises a stage comprising a body and a surface having an area to support a substrate, a shaft coupled to the stage, a first heating element disposed within a central region of the body of the stage, and at least second and third heating elements disposed within the body of the stage, the at least second and third heating elements each partially surrounding the first heating element and wherein the at least second and third heating elements are circumferentially adjacent to each other. | 12-24-2009 |
20100021273 | CONCRETE VACUUM CHAMBER - The present invention embodies processing systems and vacuum chambers equipped to process substrates for flat panel displays, solar cells, or other electronic devices. The processing system and/or the vacuum chambers as well as their components and supporting structure are constructed of less costly materials and in a more energy efficient manner than that of current large area substrate processing systems. In one embodiment, the processing system chamber bodies and their supporting structures are constructed of reinforced concrete. In one embodiment, system processing chambers include a vacuum tight lining disposed inside reinforced concrete chamber bodies. | 01-28-2010 |
20100078041 | BRUSH BOX CLEANER MODULE WITH FORCE CONTROL - Embodiments of the present invention relates to an apparatus and method for cleaning a substrate using scrubber brushes. One embodiment of the present invention provides a substrate cleaner comprises two scrubber brush assemblies movably disposed in a processing volume. The two scrubber brush assemblies are configured to contact and clean opposite surfaces of a substrate disposed in the processing volume. The substrate cleaner also comprises a positioning assembly configured to simultaneously adjust positions of the two scrubber brush assemblies, wherein the positioning assembly makes substantially the same amount of adjustment to the first and second scrubber brush assemblies in mirror symmetry. | 04-01-2010 |
20100117309 | SEALING APPARATUS FOR A PROCESS CHAMBER - A sealing apparatus is provided herein. In some embodiments, the sealing apparatus includes an annular body including a first portion having a circular cross-section and a second portion extending radially outward from the first portion, wherein the second portion has a rectangular cross-section. In some embodiments, a sealing apparatus includes a body configured to be retained in a recess of a first surface; an arm extending from the body away from the first surface and configured to provide a force when deflected towards the body by a second surface to form a seal between the first surface and the second surface. | 05-13-2010 |
20100173495 | SUBSTRATE PROCESSING APPARATUS USING A BATCH PROCESSING CHAMBER - Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. In one embodiment, a system is configured to perform a substrate processing sequence that contains batch processing chambers only, or batch and single substrate processing chambers, to optimize throughput and minimize processing defects due to exposure to a contaminating environment. In one embodiment, a batch processing chamber is used to increase the system throughput by performing a process recipe step that is disproportionately long compared to other process recipe steps in the substrate processing sequence that are performed on the cluster tool. In another embodiment, two or more batch chambers are used to process multiple substrates using one or more of the disproportionately long processing steps in a processing sequence. Aspects of the invention also include an apparatus and method for delivering a precursor to a processing chamber so that a repeatable ALD or CVD deposition process can be performed. | 07-08-2010 |
20100273334 | MILLISECOND ANNEALING (DSA) EDGE PROTECTION - A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy toward a surface of the substrate. An energy blocker is provided to block at least a portion of the energy directed toward the substrate. The blocker prevents damage to the substrate from thermal stresses as the incident energy approaches an edge of the substrate. | 10-28-2010 |
20100305884 | METHODS FOR DETERMINING THE QUANTITY OF PRECURSOR IN AN AMPOULE - Methods of determining an amount of precursor in an ampoule have been provided herein. In some embodiments, a method for determining an amount of solid precursor in an ampoule may include determining a first pressure in an ampoule having a first volume partially filled with a solid precursor; flowing an amount of a first gas into the ampoule to establish a second pressure in the ampoule; determining a remaining portion of the first volume based on a relationship between the first pressure, the second pressure, and the amount of the first gas flowed into the ampoule; and determining the amount of solid precursor in the ampoule based on the first volume and the remaining portion of the first volume. | 12-02-2010 |
20110000433 | PLASMA, UV AND ION/NEUTRAL ASSISTED ALD OR CVD IN A BATCH TOOL - A batch processing chamber includes a chamber housing, a substrate boat for containing a batch of substrates in a process region, and an excitation assembly for exciting species of a processing gas. The excitation assembly is positioned within the chamber housing and may include plasma, UV, or ion assistance. | 01-06-2011 |
20110041764 | BATCH PROCESSING PLATFORM FOR ALD AND CVD - A batch processing platform used for ALD or CVD processing is configured for high throughput and minimal footprint. In one embodiment, the processing platform comprises an atmospheric transfer region, at least one batch processing chamber with a buffer chamber and staging platform, and a transfer robot disposed in the transfer region wherein the transfer robot has at least one substrate transfer arm that comprises multiple substrate handling blades. The platform may include two batch processing chambers configured with a service aisle disposed therebetween to provide necessary service access to the transfer robot and the deposition stations. In another embodiment, the processing platform comprises at least one batch processing chamber, a substrate transfer robot that is adapted to transfer substrates between a FOUP and a processing cassette, and a cassette transfer region containing a cassette handler robot. The cassette handler robot may be a linear actuator or a rotary table. | 02-24-2011 |
20110154590 | WAFER EDGE CLEANING - In a first aspect, an apparatus for cleaning a thin disk is provided. The apparatus includes a support roller for supporting a rotating wafer within a wafer cleaner. The support roller comprises a guide portion, for receiving an edge of a wafer, having an inclined surface comprising a low-friction material and adapted to allow the wafer edge to slide thereagainst; and an edge-trap portion for retaining the edge of the wafer and having a transverse surface comprising a high-friction material and adapted, when in communication with the edge of the wafer, to resist sliding thereagainst. Numerous other aspects are provided. | 06-30-2011 |
20110223334 | ATOMIC LAYER DEPOSITION CHAMBER WITH MULTI INJECT - Embodiments of the invention relate to apparatus and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber lid assembly comprises a channel having an upper portion and a lower portion, wherein the channel extends along a central axis, a housing having an inner region and at least partially defining two or more annular channels, an insert disposed in the inner region and defining the upper portion, the upper portion fluidly coupled with the two or more annular channels, and a tapered bottom surface extending from the bottom portion of the channel to a peripheral portion of the chamber lid assembly. | 09-15-2011 |
20120103425 | Flow Meter With Improved Thermal Stability And Methods Of Use - Devices and methods for controlling flow to a processing chamber are disclosed. The devices comprise a flow meter, an inlet tube in fluid communication with the flow meter, an outlet tube in fluid communication with the outlet of the flow meter, and thermal insulation encompassing at least a portion of the flow meter, at least a portion of the inlet tube and at least a portion of the outlet tube. | 05-03-2012 |
20120135609 | Apparatus and Process for Atomic Layer Deposition - Provided are gas distribution plates (showerheads) for use in an apparatus configured to form a film during, for example, an atomic layer deposition (ALD) process. The gas distribution plate comprises a body defining a thickness and a peripheral edge and has a front surface for facing the substrate. The front surface has a central region with a plurality of openings configured to distribute process gases over the substrate and a focus ring with a sloped region. The focus ring is concentric to the central region such that the thickness at the focus ring is greater than the thickness at the central region. | 05-31-2012 |
20120192792 | PLASMA, UV AND ION/NEUTRAL ASSISTED ALD OR CVD IN A BATCH TOOL - CVD and ALD methods of using a batch processing chamber to process substrates are described. A batch processing chamber includes a chamber housing, a substrate boat for containing a batch of substrates in a process region, and an excitation assembly for exciting species of a processing gas. The excitation assembly is positioned within the chamber housing and may include plasma, UV, or ion assistance. | 08-02-2012 |
20120210937 | SUBSTRATE PROCESSING APPARATUS USING A BATCH PROCESSING CHAMBER - Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. | 08-23-2012 |
20120222620 | Atomic Layer Deposition Carousel with Continuous Rotation and Methods of Use - Provided are atomic layer deposition apparatus and methods including a rotating wheel with a plurality of substrate carriers for continuous processing of substrates. The processing chamber may have a loading station on the front end which is configured with one or more robots to load and unload substrates from the substrate carriers without needing to stop the rotating wheel. | 09-06-2012 |
20120225191 | Apparatus and Process for Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units. | 09-06-2012 |
20120225192 | Apparatus And Process For Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units. | 09-06-2012 |
20120225193 | Apparatus And Process For Atomic Layer Deposition - Provided is a substrate processing apparatus, such as an atomic layer deposition (ALD) chamber, comprising a substrate support on a swinging support arm and, optionally, a plurality of exhaust ducts located adjacent to but a distance from the gas distribution plate. One or more of the substrate processing apparatus may be a component of an integrated cluster tool to process multiple substrates concurrently. | 09-06-2012 |
20120225194 | Apparatus And Process For Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including multiple gas distribution plates including stages for moving substrates between the gas distribution plates. | 09-06-2012 |
20120225195 | Atomic Layer Deposition Carousel With Continuous Rotation And Methods Of Use - Provided are atomic layer deposition apparatus and methods including a rotating wheel with a plurality of substrate carriers for continuous processing of substrates. The processing chamber may have a loading station on the front end which is configured with one or more robots to load and unload substrates from the substrate carriers without needing to stop the rotating wheel. | 09-06-2012 |
20120225203 | Apparatus and Process for Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate with a thermal element. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate by temporarily raising or lowering the temperature. | 09-06-2012 |
20120225204 | Apparatus and Process for Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including multiple gas distribution plates including stages for moving substrates between the gas distribution plates. | 09-06-2012 |
20120225206 | Apparatus and Process for Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including a gas cushion plate comprising a plurality of openings configured to create a gas cushion adjacent the gas cushion plate so that a substrate can be moved through a processing chamber. | 09-06-2012 |
20120225207 | Apparatus and Process for Atomic Layer Deposition - Provided is a substrate processing apparatus, such as an atomic layer deposition (ALD) chamber, comprising a substrate support on a swinging support arm and, optionally, a plurality of exhaust ducts located adjacent to but a distance from the gas distribution plate. One or more of the substrate processing apparatus may be a component of an integrated cluster tool to process multiple substrates concurrently. | 09-06-2012 |
20120225219 | Apparatus And Process For Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate with a thermal element. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate by temporarily raising or lowering the temperature. | 09-06-2012 |
20120269967 | Hot Wire Atomic Layer Deposition Apparatus And Methods Of Use - Provided are gas distribution plates for atomic layer deposition apparatus including a hot wire or hot wire unit which can be heated to excite gaseous species while processing a substrate. Methods of processing substrates using a hot wire to excite gaseous precursor species are also described. | 10-25-2012 |
20130019960 | Reactant Delivery System For ALD/CVD Processes - Provided are apparatus and methods for generating a chemical precursor. The apparatus comprises an inlet line to be connected to an ampoule and an outlet line to be connected to an ampoule. The inlet line having an inlet valve to control the flow of a carrier gas into the ampoule and the outlet line has an outlet valve to control the flow exiting the ampoule. A bypass valve allows carrier gas to bypass the ampoule and purge the outlet valve without flowing gas into the ampoule. | 01-24-2013 |
20130098477 | Apparatus and Method for Providing Uniform Flow of Gas - Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels. | 04-25-2013 |
20130137267 | Methods for Atomic Layer Etching - Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate. | 05-30-2013 |
20130143415 | Multi-Component Film Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports including at least one first reactive gas port in fluid communication with a first reactive gas and at least one second reactive gas port in fluid communication with a gas manifold. The gas manifold is in fluid communication with at least a second reactive gas different from the first reactive gas and a purge gas. Also provided are atomic layer deposition apparatus and methods including linear energy sources in one or more of region before the gas distribution plate and a region after the gas distribution plate. | 06-06-2013 |
20130164445 | Self-Contained Heating Element - Provided are assemblies comprising an elongate enclosure comprising a material resistant to thermal expansion at temperatures experienced in a processing chamber. At least one heating element extends along a longitudinal axis of the elongate enclosure through an open interior region allowing a flow of gases to pass the heating element in a direction substantially perpendicular to the longitudinal axis. Methods of processing substrates using a heating element to excite gaseous precursor species are also described. | 06-27-2013 |
20130192756 | SEALING APPARATUS FOR A PROCESS CHAMBER - A sealing apparatus is provided herein. In some embodiments, the sealing apparatus includes an annular body including a first portion having a circular cross-section and a second portion extending radially outward from the first portion, wherein the second portion has a rectangular cross-section. In some embodiments, a sealing apparatus includes a body configured to be retained in a recess of a first surface; an arm extending from the body away from the first surface and configured to provide a force when deflected towards the body by a second surface to form a seal between the first surface and the second surface. | 08-01-2013 |
20130192761 | Rotary Substrate Processing System - A substrate processing system for processing multiple substrates is provided and generally includes at least one processing platform and at least one staging platform. Each substrate is positioned on a substrate carrier disposed on a substrate support assembly. Multiple substrate carriers, each is configured to carry a substrate thereon, are positioned on the surface of the substrate support assembly. The processing platform and the staging platform, each includes a separate substrate support assembly, which can be rotated by a separate rotary track mechanism. Each rotary track mechanism is capable of supporting the substrate support assembly and continuously rotating multiple substrates carried by the substrate carriers and disposed on the substrate support assembly. Each substrate is thus processed through at least one shower head station and at least one buffer station, which are positioned at a distance above the rotary track mechanism of the processing platform. Each substrate can be transferred between the processing platform and the staging platform and in and out the substrate processing system. | 08-01-2013 |
20130196078 | Multi-Chamber Substrate Processing System - A substrate processing system for processing multiple substrates is provided and generally includes at least one substrate processing platform and at least one substrate staging platform. The substrate processing platform includes a rotary track system capable of supporting multiple substrate support assemblies and continuously rotating the substrate support assemblies, each carrying a substrate thereon. Each substrate is positioned on a substrates support assembly disposed on the rotary track system and being processed through at least one shower head station and at least one buffer station, which are positioned atop the rotary track system of the substrate processing platform. Multiple substrates disposed on the substrate support assemblies are processed in and out the substrate processing platform. The substrate staging platform includes at least one dual-substrate processing station, each dual-substrate processing station includes two substrate support assemblies for supporting two substrates thereon. | 08-01-2013 |
20130210238 | Multi-Injector Spatial ALD Carousel and Methods of Use - A substrate processing chamber and methods for processing multiple substrates is provided and generally includes a plurality of spaced gas distribution assemblies and a substrate support apparatus to rotate substrates along a path adjacent each of the plurality of gas distribution assemblies. Each of the gas distribution assemblies comprises a plurality of elongate gas ports extending in a direction substantially perpendicularly to the path traversed by the substrate. | 08-15-2013 |
20130263944 | Apparatus and Method for Providing Uniform Flow of Gas - Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels. | 10-10-2013 |
20140106565 | Methods For Atomic Layer Etching - Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate. | 04-17-2014 |
20140127404 | Apparatus For Spatial Atomic Layer Deposition With Recirculation And Methods Of Use - Provided are atomic layer deposition apparatus and methods including a plurality of elongate gas ports and pump ports in communication with multiple conduits to transport the gases from the processing chamber to be condensed, stored and/or recirculated. | 05-08-2014 |
20140271054 | MULTI-POSITION BATCH LOAD LOCK APPARATUS AND SYSTEMS AND METHODS INCLUDING SAME - Various embodiments of batch load lock apparatus are disclosed. The batch load lock apparatus includes a load lock body including first and second load lock openings, a lift assembly within the load lock body, the lift assembly including multiple wafer stations, each of the multiple wafer stations adapted to provide access to wafers through the first and second load lock openings, wherein the batch load lock apparatus includes temperature control capability (e.g., heating or cooling). Batch load lock apparatus is capable of transferring batches of wafers into and out of various processing chambers. Systems including the batch load lock apparatus and methods of operating the batch load lock apparatus are also provided, as are numerous other aspects. | 09-18-2014 |
20140271057 | TEMPERATURE CONTROL SYSTEMS AND METHODS FOR SMALL BATCH SUBSTRATE HANDLING SYSTEMS - Embodiments of substrate handling systems capable of heating and/or cooling batches of substrates being transferred into and out of various substrate processing chambers are provided. Methods of substrate handling are also provided, as are numerous other aspects. | 09-18-2014 |
20150048739 | Elongated Capacitively Coupled Plasma Source For High Temperature Low Pressure Environments - A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure. | 02-19-2015 |
20150059981 | HOT WALL REACTOR WITH COOLED VACUUM CONTAINMENT - Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing substrates includes a chamber body enclosing a processing volume, the chamber body comprising a chamber floor, a chamber wall coupled to the chamber floor, and a chamber lid removably coupled to the chamber wall, wherein at least one of the chamber floor, the chamber wall, and the chamber lid comprise passages for a flow of a thermal control media; a heater plate disposed adjacent to and spaced apart from the chamber floor; a sleeve disposed adjacent to and spaced apart from the chamber wall, the sleeve supported by the heater plate; and a first sealing element disposed at a first interface between the chamber wall and the chamber lid. | 03-05-2015 |