| Patent application number | Description | Published |
|---|
| 20090023271 | Glass-based SOI structures - A method of forming a semiconductor on glass structure includes: establishing an exfoliation layer on a semiconductor wafer; contacting the exfoliation layer of the semiconductor wafer to a glass substrate; applying pressure, temperature and voltage to the semiconductor wafer and the glass substrate, without a vacuum atmosphere, such that a bond is established therebetween via electrolysis; and applying stress such that the exfoliation layer separates from the semiconductor wafer and remains bonded to the glass substrate. | 01-22-2009 |
| 20090109599 | High energy density ultracapacitor - The invention is directed to a carbon composition produced from a carbon precursor, a carbon precursor modifier, and an additive, wherein a mixture of the recited components is formed, the carbon precursor is cured, the resulting mixture carbonized to produce a porous carbon composition. Also disclosed are methods for preparing the carbon composition and for using the carbon composition to fabricate electrodes and electric double layer capacitors comprising the carbon composition. | 04-30-2009 |
| 20090294081 | Electrodes For Electric Double Layer Devices - The disclosure provides a method comprising contacting a fibrous polymeric material and a carbon material to form a mixture, contacting the mixture with a liquid to form a slurry, and then forming a layer comprising the slurry. Also disclosed are layers formed from the recited methods, electrodes comprising the layers, and electrical devices comprising the layers and/or electrodes. | 12-03-2009 |
| 20090297762 | Flow-Through Sorbent Comprising A Metal Sulfide - A flow-through sorbent comprising at least 30 wt % of a metal sulfide, and a binder. The sorbent may be used, for example, for the removal of a contaminant, such as mercury, from a fluid stream. | 12-03-2009 |
| 20090297885 | Composite Comprising An Inorganic Substrate With A Coating Comprising Activated Carbon And Metal Sulfide - A composite comprising an inorganic substrate with a coating comprising activated carbon and a metal sulfide. The composite may be used, for example, for the removal of a contaminant, such as mercury, from a fluid stream. | 12-03-2009 |
| 20100050869 | Plate System For Contaminant Removal - Plate systems and methods of using them. The plate systems may be used, for example, for the removal of metallic or semi-metallic contaminants from a fluid stream. | 03-04-2010 |
| 20100127343 | Glass-Ceramic-Based Semiconductor-On-Insulator Structures and Method For Making The Same - Methods and apparatus for forming a semiconductor on glass-ceramic structure provide for: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a precursor glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer to thereby form an intermediate semiconductor on precursor glass structure; sandwiching the intermediate semiconductor on precursor glass structure between first and second support structures; applying pressure to one or both of the first and second support structures; and subjecting the intermediate semiconductor on precursor glass structure to heat-treatment step to crystallize the precursor glass resulting in the formation of a semiconductor on glass-ceramic structure. | 05-27-2010 |
| 20100150814 | Methods For Forming Activated Carbon Material For High Energy Density Ultracapacitors - A method for producing an activated carbon material includes forming an aqueous mixture of a natural, non-lignocellulosic carbon precursor and an inorganic compound, heating the mixture in an inert or reducing atmosphere, cooling the heated mixture to form a first carbon material, and removing the inorganic compound to produce an activated carbon material. The activated carbon material is suitable to form improved carbon-based electrodes for use in high energy density devices. | 06-17-2010 |
| 20100151328 | Activated Carbon Materials For High Energy Density Ultracapacitors - An activated carbon material derived, for example, by carbonizing and activating a non-lignocellulosic carbon precursor has a structural order ratio less than or equal to 0.08, and a nitrogen content greater than 0.2 wt. %. The activated carbon material can also have a volumetric capacitance greater than or equal to 70 F/cm | 06-17-2010 |
| 20100199841 | Composite Comprising An Inorganic Substrate With A Coating Comprising Activated Carbon And A Metal Sulfide - A composite comprising an inorganic substrate with a coating comprising activated carbon and a metal sulfide. The composite may be used, for example, for the removal of a contaminant, such as mercury, from a fluid stream. | 08-12-2010 |
