| Patent application number | Description | Published |
|---|
| 20090057573 | TECHNIQUES FOR TERMINAL INSULATION IN AN ION IMPLANTER - Techniques for terminal insulation for an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an ion implanter comprising a terminal structure defining a terminal cavity. The ion implanter may also comprise a grounded enclosure defining a grounded cavity and the terminal structure may be at least partially disposed within the grounded cavity. The ion implanter may further comprise an intermediate terminal structure disposed proximate an exterior portion of the terminal structure and at least partially disposed within the grounded cavity. | 03-05-2009 |
| 20090072163 | TECHNIQUES FOR CONTROLLING A CHARGED PARTICLE BEAM - Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an acceleration column. The acceleration column may comprise a plurality of electrodes having apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a plurality of resistors electrically coupled to the plurality of electrodes. The charged particle acceleration/deceleration system may further comprise a plurality of switches electrically coupled to the plurality of electrodes and the plurality of resistors, each of the plurality of switches may be configured to be selectively switched respectively in a plurality of operation modes. | 03-19-2009 |
| 20090078554 | TECHNIQUES FOR MAKING HIGH VOLTAGE CONNECTIONS - Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts. | 03-26-2009 |
| 20090166555 | RF electron source for ionizing gas clusters - The present invention discloses a system and method for generating gas cluster ion beams (GCIB) having very low metallic contaminants. Gas cluster ion beam systems are plagued by high metallic contamination, thereby affecting their utility in many applications. This contamination is caused by the use of thermionic sources, which impart contaminants and are also susceptible to short lifecycles due to their elevated operating temperatures. While earlier modifications have focused on isolating the filament from the source gas cluster as much as possible, the present invention represents a significant advancement by eliminating the thermionic source completely. In the preferred embodiment, an inductively coupled plasma and ionization region replaces the thermionic source and ionizer of the prior art. Through the use of RF or microwave frequency electromagnetic waves, plasma can be created in the absence of a filament, thereby eliminating a major contributor of metallic contaminants. | 07-02-2009 |
| 20090166566 | High tilt implant angle performance using in-axis tilt - The present invention comprises a method for high tilt angle implantation, with angular precision not previously achievable. An ion beam, having a width and height dimension, is made up of a number of individual beamlets. These beamlets typically display a higher degree of parallelism in one of these two dimensions. Thus, to minimize angular error, the workpiece is tilted about an axis substantially perpendicular to the dimension having the higher degree of parallelism. The workpiece is then implanted at a high tilt angle and rotated about a line orthogonal to the surface of the workpiece. This process can be repeated until the high tilt implantation has been performed in all required regions. | 07-02-2009 |
| 20090206273 | APPARATUS FOR MEASURING BEAM CHARACTERISTICS AND A METHOD THEREOF - An apparatus and a method for detecting particle beam characteristics are disclosed. In one embodiment, the apparatus may have a body including a first end and second end and at least one detector between the first and second ends. The apparatus may have a transparent state where a portion of the particles entering the apparatus may pass through the apparatus. The apparatus may also have a minimum transparency state where substantially all of the particles entering the apparatus may be prevented from passing through the apparatus and detected. Different transparency state may be achieved by rotating the apparatus or the detector contained therein. With the apparatus, it is possible to detect the beam properties such as the beam intensity, angle, parallelism, and a distribution of the particles in a particle beam. | 08-20-2009 |
| 20100019141 | ENERGY CONTAMINATION MONITOR WITH NEUTRAL CURRENT DETECTION - This energy contamination monitor has an ionization apparatus configured to ionize the neutral particles in an ion beam. Neutral particles are ionized, separated based at least in part upon different transit times over a distance, and measured with the Faraday electrode based at least in part upon the different transit times. The energy contamination monitor can distinguish between fast and slow neutral particles. | 01-28-2010 |
| 20100090131 | METHOD OF DETERMINING ANGLE MISALIGNMENT IN BEAM LINE ION IMPLANTERS - A method includes directing an ion beam at a plurality of differing incident angles with respect to a target surface of a substrate by tilting the substrate as the ion beam is distributed across the target surface to implant ions into a plurality of portions of the substrate, wherein each one of the plurality of differing incident angles is associated with a different one of the plurality of portions, measuring angle sensitive data from each of the plurality of portions of to the substrate, and determining an angle misalignment between the target surface and the ion beam incident on the target surface from the angle sensitive data. | 04-15-2010 |
| 20100098851 | TECHNIQUES FOR ATOMIC LAYER DEPOSITION - Techniques for atomic layer deposition (ALD) are disclosed. In one particular exemplary embodiment, the techniques may be realized as a system for ALD comprising a plurality of reactors in a stacked configuration, wherein each reactor comprises a wafer holding portion for holding a target wafer, a gas assembly coupled to the plurality of reactors and configured to provide at least one gas to at least one of the plurality of reactors, and an exhaust assembly coupled to the plurality of reactors and configured to exhaust the at least one gas from the at least one of the plurality of reactors. The gas assembly may further comprise a valve assembly coupled to each of the first gas inlet, the second gas inlet, and the third gas inlet, where the valve assembly is configured to selectively release at least one of the first gas, the second gas, and the third gas. | 04-22-2010 |
| 20100116983 | MASS ANALYSIS MAGNET FOR A RIBBON BEAM - A ribbon beam mass analyzer having a first and second solenoid coils and steel yoke arrangement. Each of the solenoid coils have a substantially “racetrack” configuration defining a space through which an ion ribbon beam travels. The solenoid coils are spaced apart along the direction of travel of the ribbon beam. Each of the solenoid coils generates a uniform magnetic field to accommodate mass resolution of wide ribbon beams to produce a desired image of ions generated from an ion source. | 05-13-2010 |
| 20110094862 | TECHNIQUES FOR MAKING HIGH VOLTAGE CONNECTIONS - Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts. | 04-28-2011 |
| 20110124186 | APPARATUS AND METHOD FOR CONTROLLABLY IMPLANTING WORKPIECES - A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation. | 05-26-2011 |
| 20110155929 | APPARATUS AND SYSTEM FOR CONTROLLING ION RIBBON BEAM UNIFORMITY IN AN ION IMPLANTER - An ion beam blocking array configured to provide a mechanical means for adjusting the beam current profile of an ion ribbon beam by blocking the beam current at one or more locations across the ribbon beam. The ion beam blocking array includes a drive motor, an axle connected to the drive motor and a plurality of profile wheels disposed along the axle where each of the profile wheels is configured to rotate when the axle rotates. Each of the profile wheels is disposed across a width of the ribbon beam and has a position corresponding to a location along the width of the beam. | 06-30-2011 |
