| Patent application number | Description | Published |
|---|
| 20090111231 | Method for Forming Shielded Gate Field Effect Transistor Using Spacers - A trench is formed in a semiconductor region. A dielectric layer lining sidewalls and bottom surface of the trench is formed. The dielectric layer is thicker along lower sidewalls and the bottom surface than along upper sidewalls of the trench. After forming the dielectric layer, a lower portion of the trench is filled with a shield electrode. Dielectric spacers are formed along the upper trench sidewalls. After forming the dielectric spacers, an inter-electrode dielectric (IED) is formed in the trench over the shield electrode. After forming the IED, the dielectric spacers are removed. | 04-30-2009 |
| 20090315040 | WIDE BANDGAP DEVICE IN PARALLEL WITH A DEVICE THAT HAS A LOWER AVALANCHE BREAKDOWN VOLTAGE AND A HIGHER FORWARD VOLTAGE DROP THAN THE WIDE BANDGAP DEVICE - A method and device for protecting wide bandgap devices from failing during suppression of voltage transients. An improvement in avalanche capability is achieved by placing one or more diodes, or a PNP transistor, across the blocking junction of the wide bandgap device. | 12-24-2009 |
| 20100140689 | Trench-Based Power Semiconductor Devices with Increased Breakdown Voltage Characteristics - Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed. | 06-10-2010 |
| 20100140695 | Trench-Based Power Semiconductor Devices With Increased Breakdown Voltage Characteristics - Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed. | 06-10-2010 |
| 20100140696 | Trench-Based Power Semiconductor Devices With Increased Breakdown Voltage Characteristics - Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed. | 06-10-2010 |
| 20100140697 | Trench-Based Power Semiconductor Devices with Increased Breakdown Voltage Characteristics - Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed. | 06-10-2010 |
| 20100314707 | Reduced Process Sensitivity of Electrode-Semiconductor Rectifiers - Disclosed are semiconductor devices and methods of making semiconductor devices. An exemplary embodiment comprises a semiconductor layer of a first conductivity type having a first surface, a second surface, and a graded net doping concentration of the first conductivity type within a portion of the semiconductor layer. The graded portion is located adjacent to the top surface of the semiconductor layer, and the graded net doping concentration therein decreasing in value with distance from the top surface of the semiconductor layer. The exemplary device also comprises an electrode disposed at the first surface of the semiconductor layer and adjacent to the graded portion. | 12-16-2010 |
| 20110089432 | WIDE BANDGAP DEVICE IN PARALLEL WITH A DEVICE THAT HAS A LOWER AVALANCHE BREAKDOWN VOLTAGE AND A HIGHER FORWARD VOLTAGE DROP THAN THE WIDE BANDGAP DEVICE - An electrical device on a single semiconductor substrate includes: an open base vertical PNP transistor placed in parallel with a wide bandgap, high voltage diode wherein the PNP transistor has a P doped collector region, an N-doped base layer, an N doped buffer layer, and a P doped emitter layer. | 04-21-2011 |
