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Joseph A. Iadanza, Hinesburg US

Joseph A. Iadanza, Hinesburg, VT US

Patent application numberDescriptionPublished
20080229265Design Structure for a Clock Distribution Network, Structure, and Method for Providing Balanced Loading in Integrated Circuit Clock Trees - Design structure for a clock distribution network, structure, and method for providing balanced loading is disclosed. In particular, a design structure for a clock distribution network may be formed of one or more clock fanout distribution levels. Each respective distribution level may include an equal number of buffer circuits and wiring routes that have substantially identical physical and electrical properties. Additionally, a final distribution level may include wiring routes that have substantially identical physical and electrical properties connecting buffer circuits to one or more logic leaf connection nodes.09-18-2008
20080229266Design Structure for a Clock Distribution Network, Structure, and Method for Providing Balanced Loading in Integrated Circuit Clock Trees - Design structure for a clock distribution network, structure, and method for providing balanced loading is disclosed. In particular, a clock distribution network may be formed of one or more clock fanout distribution levels. Each respective distribution level may include an equal number of buffer circuits and wiring routes that have substantially identical physical and electrical properties. Additionally, a final distribution level may include wiring routes that have substantially identical physical and electrical properties connecting buffer circuits to one or more logic leaf connection nodes.09-18-2008
20080240222SYSTEM AND METHOD FOR BALANCING DELAY OF SIGNAL COMMUNICATION PATHS THROUGH WELL VOLTAGE ADJUSTMENT - A method of balancing signal interconnect path delays between an analog domain and a digital domain of an integrated circuit includes applying a test signal to a selected one of a plurality of communication paths between the analog domain and the digital domain. A rising edge delay and a falling edge delay of the test signal is equalized by adjusting a body bias voltage of a delay element configured within the selected communication path. A rising edge delay and a falling edge delay for each of the remaining communication paths is compared with the equalized rising edge delay and falling edge delay of the selected communication path, and a body bias voltage for one or more of a plurality of delay elements configured within each of the remaining communication paths is adjusted until corresponding rising and falling edge delays thereof match the equalized rising edge delay and falling edge delay of the selected communication path.10-02-2008
20080244479STRUCTURE FOR INTRINSIC RC POWER DISTRIBUTION FOR NOISE FILTERING OF ANALOG SUPPLIES - A design structure for intrinsic RC power distribution for noise filtering of analog supplies. The design structure is embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit. The design structure includes a voltage regulator; a variable resistor coupled to the voltage regulator; and a performance monitor and control circuit providing a feedback loop to the variable resistor.10-02-2008
20080273366DESIGN STRUCTURE FOR IMPROVED SRAM DEVICE PERFORMANCE THROUGH DOUBLE GATE TOPOLOGY - A design structure embodied in a machine readable medium used in a design process includes a static random access memory (SRAM) device having a pair of cross-coupled, complementary metal oxide semiconductor (CMOS) inverters configured as a storage cell for a bit of data, a first pair of transfer gates configured to couple complementary internal nodes of the storage cell to a corresponding pair of bitlines during a read operation of the device; and a second pair of transfer gates configured to couple the storage cell nodes to the pair of bitlines during a write operation of the device, wherein impedance between the bitlines and the storage cell nodes during the write operation is less than that for the read operation, wherein impedance between the bitlines and the storage cell nodes during the write operation is less than that for the read operation.11-06-2008
20080273373APPARATUS FOR IMPROVED SRAM DEVICE PERFORMANCE THROUGH DOUBLE GATE TOPOLOGY - A static random access memory (SRAM) device a pair of cross-coupled, complementary metal oxide semiconductor (CMOS) inverters configured as a storage cell for a bit of data, a first pair of transfer gates configured to couple complementary internal nodes of the storage cell to a corresponding pair of bitlines during a read operation of the device; and a second pair of transfer gates configured to couple the storage cell nodes to the pair of bitlines during a write operation of the device, wherein impedance between the bitlines and the storage cell nodes during the write operation is less than that for the read operation, wherein impedance between the bitlines and the storage cell nodes during the write operation is less than that for the read operation.11-06-2008
20080304192Low Voltage Head Room Detection For Reliable Start-Up Of Self-Biased Analog Circuits - A method and structure for preventing operation of a circuit in a high current operating region by disabling a start-up circuit until a power supply headroom is detected at a predetermined voltage level.12-11-2008
20090003419TRANSCEIVER FOR RECEIVING AND TRANSMITTING DATA OVER A NETWORK AND METHOD FOR TESTING THE SAME - The present invention provides a transceiver for receiving and transmitting data over a network, and a method for testing the same. In particular, the present invention provides a physical layer transceiver having a built-in-self-test (BIST) device that allows for, among other things, pulse density/width variation and jitter control.01-01-2009
20090021085DESIGN STRUCTURES, METHOD AND SYSTEMS OF POWERING ON INTEGRATED CIRCUIT - Design structures, method and systems of powering on an integrated circuit (IC) are disclosed. In one embodiment, the system includes a region in the IC including functional logic, a temperature sensor for sensing a temperature in the region when the IC is powered up and a heating element therefor; a processing unit including: a comparator for comparing the temperature against a predetermined temperature value, a controller, which in the case that the temperature is below the predetermined temperature value, delays functional operation of the IC and controls heating of the region of the IC, and a monitor for monitoring the temperature in the region; and wherein the controller, in the case that the temperature rises above the predetermined temperature value, ceases the heating and initiates functional operation of the IC.01-22-2009
20090024972STRUCTURES OF POWERING ON INTEGRATED CIRCUIT - Design structures, method and systems of powering on an integrated circuit (IC) are disclosed. In one embodiment, the system includes a region in the IC including functional logic, a temperature sensor for sensing a temperature in the region when the IC is powered up and a heating element therefor; a processing unit including: a comparator for comparing the temperature against a predetermined temperature value, a controller, which in the case that the temperature is below the predetermined temperature value, delays functional operation of the IC and controls heating of the region of the IC, and a monitor for monitoring the temperature in the region; and wherein the controller, in the case that the temperature rises above the predetermined temperature value, ceases the heating and initiates functional operation of the IC.01-22-2009
20090033389MICRO-PHASE ADJUSTING AND MICRO-PHASE ADJUSTING MIXER CIRCUITS DESIGNED WITH STANDARD FIELD EFFECT TRANSISTOR STRUCTURES - Disclosed herein are embodiments of a programmable phase adjusting circuit, a programmable phase adjusting mixer circuit and design structures for these circuits. These circuits comprise a variable delay device connected between input and output nodes. The device includes multiple FETs with input diffusion regions that are connected to a voltage rail via switches so that they can be selectively biased, gates that are connected in series to the input node so that a periodic input signal can be propagated sequentially through each of the gates and output diffusion regions that are connected in parallel to the output node. A current source is connected between the output node and another voltage rail for biasing the output node when the variable delay device is off. The variable delay device enables a circuit in which small increments of selectable phase adjustments can be made to the periodic input signal as a function of propagation delay.02-05-2009
20090033395MULTIPLE SOURCE-SINGLE DRAIN FIELD EFFECT SEMICONDUCTOR DEVICE AND CIRCUIT - Disclosed are embodiments of a variable-delay field effect transistor (FET) having multiple source regions that can be individually and selectively biased to provide an electrical connection to a single drain region. Delay is a function of which of the multiple source regions is/are selectively biased as well as a function of gate resistance and capacitance. Such a variable-delay FET can be incorporated into a phase adjusting circuit, which uses gate propagation delays to selectively phase adjust an input signal. The phase adjusting circuit can be tuned by incorporating non-salicided resistances and additional capacitance at various positions on the gate structure. The phase adjusting circuit can further be modified into a phase adjusting mixer circuit that enables a phase adjusted signal to be combined with an additional signal.02-05-2009
20090051420INTRINSIC RC POWER DISTRIBUTION FOR NOISE FILTERING OF ANALOG SUPPLIES - Analog supply for an analog circuit and process for supplying an analog signal to an analog circuit. The analog supply includes a noise filter having a variable resistor, and a control device coupled to adjust the variable resistor. The control device is structured and arranged to set the resistance of the variable resistor to maximize noise filtering and optimize performance of the analog circuit.02-26-2009
20090089724Detection Method for Identifying Unintentionally Forward-Biased Diode Devices in an Integrated Circuit Device Design - A detection method for identifying unintentionally forward-biased diode devices identifies one or more forward-biased diodes directly from a graphical representation of an integrated circuit (IC) device design. The graphical representation describing one or more IC components as a plurality of geometric shapes that correspond to a set of patterns in at least one semiconductor layer. A detection method may work in conjunction with one or more checks (e.g., electrical rule check (ERC)) to analyze the graphical representation and ensure its manufacturability by reducing the likelihood the forward-biased diodes will be present in the manufactured IC device.04-02-2009
20090101940DUAL GATE FET STRUCTURES FOR FLEXIBLE GATE ARRAY DESIGN METHODOLOGIES - A gate array cell adapted for standard cell design methodology or programmable gate array that incorporates a dual gate FET device to offer a range of performance options within the same unit cell area. The conductivity and drive strength of the dual gate device may be selectively tuned through independent processing of manufacturing parameters to provide an asymmetric circuit response for the device or a symmetric response as dictated by the circuit application.04-23-2009
20090102529SHIFTING INACTIVE CLOCK EDGE FOR NOISE REDUCTION - An integrated circuit and a design structure are disclosed. An integrated circuit may comprise: multiple clocked elements; a clock signal source providing clock signals to the multiple clocked elements; and a clock shifting means coupled between the clock signal source and each of the multiple clocked elements; wherein the clock shifting means shifts clock signals of the multiple clocked elements such that the clock signals of the multiple clocked elements have aligned active edges and misaligned inactive edges to reduce the clock noise generated by the inactive edges of the clock signals.04-23-2009
20090106707Multiple Source-Single Drain Field Effect Semiconductor Device and Circuit - Disclosed are embodiments of a design structure for a variable-delay field effect transistor (FET) having multiple source regions that can be individually and selectively biased to provide an electrical connection to a single drain region. Delay is a function of which of the multiple source regions is/are selectively biased as well as a function of gate resistance and capacitance. Such a variable-delay FET can be incorporated into a phase adjusting circuit, which uses gate propagation delays to selectively phase adjust an input signal. The phase adjusting circuit can be tuned by incorporating non-salicided resistances and additional capacitance at various positions on the gate structure. The phase adjusting circuit can further be modified into a phase adjusting mixer circuit that enables a phase adjusted signal to be combined with an additional signal.04-23-2009
20090106724Transition Balancing For Noise Reduction/Di/Dt Reduction During Design, Synthesis, and Physical Design - An embodiment of a design structure is shown for noise reduction comprising synthesizing blocks of sequential latches, e.g., a pipeline circuit architecture or clocking domain, which comprises combinational logic, synthesizing a root or a master clock and at least one phase-shifted sub-domain clock for each block, assigning primary inputs and primary outputs of the block to the root clock, assigning non-primary inputs and non-primary outputs of the block to the sub-domain clock, splitting root clock inputs into root clock inputs and phase-shifted sub-domain clock inputs, assigning each of the blocks a different phase-shifted sub-domain clock phase offset, creating a clock generation circuitry for the root clocks and the phase-shifted sub-domain clocks.04-23-2009
20090108320TUNABLE CAPACITOR - Disclosed are embodiments of a design structure transistor that operates as a capacitor and an associated method of tuning capacitance within such a capacitor. The embodiments of the capacitor comprise a field effect transistor with front and back gates above and below a semiconductor layer, respectively. The capacitance value exhibited by the capacitor can be selectively varied between two different values by changing the voltage condition in a source/drain region of the transistor, e.g., using a switch or resistor between the source/drain region and a voltage supply. Alternatively, the capacitance value exhibited by the capacitor can be selectively varied between multiple different values by changing voltage conditions in one or more of multiple channel regions that are flanked by multiple source/drain regions within the transistor. The capacitor will exhibit different capacitance values depending upon the conductivity in each of the channel regions.04-30-2009
20090108869Design Structure for a Flexible Multimode Logic Element For Use In A Configurable Mixed-Logic Signal Distribution Path - A design structure for a multimode circuit that is configured to operate in one of multiple operating modes is disclosed. In particular, an exemplary multimode circuit may be configured to operating in one of a full-swing mode, a limited-swing mode, a full-swing to limited-swing converter mode, and a limited-swing to full-swing converter mode. The operating modes of the multimode circuit may be dynamically selectable. One or more multimode circuits may be part of a configurable distribution path for controlling the performance of a signal distribution path or tree of an integrated circuit.04-30-2009
20090152543System, Structure and Method of Providing Dynamic Optimization of Integrated Circuits Using a Non-Contact Method of Selection, and a Design Structure - A system, structure and method is provided for providing dynamic optimization of integrated circuits using a non-contact method of selection, and a design structure on which a subject circuit resides. The method is provided for optimizing an electronic system having at least one integrated circuit. The method includes storing a target performance voltage of the at least one integrated circuit; remotely querying the at least one integrated circuit to obtain the target performance voltage; and providing an operational voltage of a next-level assembly according to the stored target performance voltage.06-18-2009
20090160689HIGH SPEED RESISTOR-BASED DIGITAL-TO-ANALOG CONVERTER (DAC) ARCHITECTURE - A digital to analog converter (DAC) system comprising, a first segment, wherein a segment comprises, a first path including an array of resistors connected in series between a first reference voltage node and a second reference voltage node, wherein the array is connected to a first switch device disposed between nodes of the array and an output node, and a third path including a second resistor in series with a second switch device, wherein the third path is connected in parallel with the first path.06-25-2009
20090160691Digital to Analog Converter Having Fastpaths - A resistor-based digital to analog converter (DAC) having mux fastpaths, which selectively connect a subset (or an entirety) of voltage divider nodes in a DAC to either a higher level of multiplexor hierarchy, or a DAC output node, effectively bypassing one or more levels of multiplexor devices. In addition, the fastpaths may selectively connect lower levels of multiplexor hierarchy to higher levels of multiplexor hierarchy and/or a DAC output node.06-25-2009
20100019816MICRO-PHASE ADJUSTING AND MICRO-PHASE ADJUSTING MIXER CIRCUITS DESIGNED WITH STANDARD FIELD EFFECT TRANSISTOR STRUCTURES - Disclosed herein are embodiments of a programmable phase adjusting circuit, a programmable phase adjusting mixer circuit and design structures for these circuits. These circuits comprise a variable delay device connected between input and output nodes. The device includes multiple FETs with input diffusion regions that are connected to a voltage rail via switches so that they can be selectively biased, gates that are connected in series to the input node so that a periodic input signal can be propagated sequentially through each of the gates and output diffusion regions that are connected in parallel to the output node. A current source is connected between the output node and another voltage rail for biasing the output node when the variable delay device is off. The variable delay device enables a circuit in which small increments of selectable phase adjustments can be made to the periodic input signal as a function of propagation delay.01-28-2010
20100201377Critical Path Redundant Logic for Mitigation of Hardware Across Chip Variation - Cross-die connection structure and method for a die or chip includes buffer elements having a buffer driver and bypass, and control lines coupled to the buffer elements in order to select one of the buffer driver and bypass for each respective buffer element. A logic network is arranged with the buffer elements to form functional paths, a test unit is structured and arranged to test the functional paths and to be coupled to the control lines, and a configuration storage register to set the selected one of the buffer driver and bypass for each passing functional path.08-12-2010

Patent applications by Joseph A. Iadanza, Hinesburg, VT US