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Joon-Suk
Joon-Suk Oh, Seocho-Gu KR
| Patent application number | Description | Published |
|---|---|---|
| 20100200945 | Schottky diode and method of fabricating the same - A schottky diode may include a schottky junction including a well formed in a semiconductor substrate and a first electrode contacting the first well. The well may have a first conductivity type. A first ohmic junction may include a first junction region formed in the well and a second electrode contacting the first junction region. The first junction region may have a higher concentration of the first conductivity type than the well. A first device isolation region may be formed in the semiconductor substrate separating the schottky junction and the first ohmic junction. A well guard having a second conductivity type opposite to the first conductivity type may be formed in the well. At least a portion of the well guard may be formed under a portion of the schottky junction. | 08-12-2010 |
Joon-Suk Oh, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20080293205 | METHOD OF FORMING METAL SILICIDE LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A method of forming a metal silicide layer includes sequentially forming a metal layer and a first capping layer on a substrate, performing a first heat treatment on the substrate to cause the substrate to react to the metal layer, removing the first, capping layer and an unreacted metal layer, forming a second capping layer on the substrate, and performing a second heat treatment on the substrate to form a metal silicide layer on the substrate. | 11-27-2008 |
Joon-Suk Song, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20090218562 | High brightness light emitting diode with a bidrectionally angled substrate - A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed with a semiconductor material of a second conductive type on the active layer, wherein concavo-convexes are formed on the interfaces of the first cladding layer, the second cladding layer, and the active layer, and the ( | 09-03-2009 |