Patent application number | Description | Published |
20100163896 | Nitride Red Phosphors and White Light Emitting Diode Using Rare-Earth-Co-Doped Nitride Red Phosphors - Disclosed are nitride red phosphors and white light emitting diodes using the same. More particularly, the present invention provides a nitride red phosphor with easily controlled composition of phosphor fraction and improved uniformity and color gamut thereof, a method for preparation thereof, a white light emitting diode with excellent color rendition and high light emitting efficiency, and a white light emitting diode package using the same. | 07-01-2010 |
20110034581 | Transparent Siloxane Resin Composition for Optical Applications - Provided is a transparent siloxane resin composition for optical applications, including: (1) a vinyl-oligosiloxane hybrid; (2) an organohydrosilicon compound having two or more silicon-bonded hydrogen atoms; and (3) a metal catalyst. | 02-10-2011 |
20120009120 | THERMAL CRACKING RESISTANT ZEOLITE MEMBRANE AND METHOD OF FABRICATING THE SAME - The present disclosure relates to a thermal cracking resistant zeolite membrane and a method of fabricating the same. The method includes dissolving an alumina-based material, a silica-based material and sodium hydroxide in water to prepare an aqueous solution, stirring the aqueous solution to form a hydrothermal solution, preparing a slurry of zeolite seeds through wet-type vibration pulverization and centrifugal separation of zeolite powder, passing the zeolite seeds through a support by vacuum filtration such that the zeolite seeds can be infiltrated into an inner region of the support ranging from a depth of 3 μm to a depth corresponding to 50% of a total thickness of the support, and immersing the support into the hydrothermal solution for hydrothermal treatment to grow a dense zeolite separation layer not only on the surface of the support but also on the inner region thereof. The zeolite membrane prevents the occurrence of thermal cracking on the zeolite separation layer, thereby providing good thermal stability and separation performance during heating and at a target processing temperature. | 01-12-2012 |
20120292825 | APPARATUS FOR MANUFACTURING SILICON SUBSTRATE FOR SOLAR CELL USING CONTINUOUS CASTING FACILITATING TEMPERATURE CONTROL AND METHOD OF MANUFACTURING SILICON SUBSTRATE USING THE SAME - The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, which can improve quality, productivity and energy conversion efficiency of the silicon substrate. The apparatus includes a crucible unit configured to receive raw silicon and having a discharge port, a heating unit provided to an outer wall and an external bottom surface of the crucible unit and heating the crucible unit to form molten silicon, a casting unit casting the molten silicon into a silicon substrate, a cooling unit rapidly cooling the silicon substrate, and a transfer unit disposed at one end of the cooling unit and transferring the silicon substrate. The casting unit includes a casting unit body having a casting space defined therein to be horizontally connected to the discharge port, and an assistant heating mechanism that preheats the casting unit body to control a solidification temperature of the silicon substrate. | 11-22-2012 |
20120328498 | METHOD FOR PREPARING HIGH-PURITY LITHIUM CARBONATE FROM BRINE - The present disclosure provides a method of preparing highly pure lithium carbonate from brine. The method includes adding an adsorbent to the brine, from which the magnesium ions Mg | 12-27-2012 |
20130001168 | APPARATUS AND METHOD FOR ADSORBING AND DESORBING LITHIUM IONS USING A CCD PROCESS - The present disclosure provides a method for adsorption/desorption of lithium ions from brine, which employs a counter current decantation process in adsorption/desorption of lithium ions, thereby achieving an adsorption rate of 65±5% and a desorption rate of 95±3%. The method includes supplying brine into one of a plurality of adsorption reactors, adsorbing lithium ions to an adsorbent by supplying the adsorbent to the adsorption reactor to which the brine is supplied and forcing the brine and the adsorbent to sequentially flow backwards inside the respective adsorption reactors, and desorbing the lithium ions from the brine by forcing the adsorbent to which the lithium ions are adsorbed to sequentially flow backwards inside a plurality of desorption reactors. Here, the brine and the adsorbent are stirred by a stirrer to maintain the adsorbent in an intermediate state instead of settling or floating inside the respective adsorption reactors. | 01-03-2013 |
20130067959 | A GRAPHITE CRUCIBLE FOR SILICON ELECTROMAGNETIC INDUCTION HEATING AND APPARATUS FOR SILICON MELTING AND REFINING USING THE GRAPHITE CRUCIBLE - The present disclosure provides a graphite crucible induction-based silicon melting. The graphite crucible comprises a cylindrical body having a plurality of slits which is formed through an outer wall and an inner wall of the cylindrical body and a bottom part connected with an edge of the cylindrical body to seal an end of the cylindrical body. | 03-21-2013 |
20130263777 | APPARATUS FOR MANUFACTURING SILICON SUBSTRATE - There is disclosed an apparatus for manufacturing a silicon substrate including a crucible part, a molding part extended from an outlet of the crucible part, the molding part comprising a molding space where a silicon substrate is formed, and a dummy bar inserted in the molding space from a predetermined portion of the molding part, wherein the dummy bar is formed of a single-crystalline material. | 10-10-2013 |
20130291595 | APPARATUS FOR MANUFACTURING HIGH PURITY POLYSILICON USING ELECTRON-BEAM MELTING AND METHOD OF MANUFACTURING HIGH PURITY POLYSILICON USING THE SAME - Apparatus and method for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber maintaining a vacuum atmosphere; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit placed on a first electron beam-irradiating region corresponding to the first electron gun and in which powdery raw silicon is placed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun and connected to the silicon melting unit via a runner. The unidirectional solidification unit is formed at a lower part thereof with a cooling channel and is provided therein with a start block driven in a downward direction. | 11-07-2013 |
20130291596 | APPARATUS FOR MANUFACTURING POLYSILICON BASED ELECTRON-BEAM MELTING USING DUMMY BAR AND METHOD OF MANUFACTURING POLYSILICON USING THE SAME - Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar. | 11-07-2013 |
20140301910 | APPARATUS FOR PREPARING SILICON NANOPARTICLE USING ICP - Disclosed is an apparatus for preparing silicon nanoparticles. The apparatus includes a corona discharge section charging silicon nanoparticles to exhibit unipolarity in order to prevent agglomeration of the silicon nanoparticles after the silicon nanoparticles are generated from an injected gas by plasma reaction of an inductively coupled plasma (ICP) coil. The apparatus may facilitate grain size control of silicon nanoparticles while improving discharge performance of a mesh filter for collection of generated nanoparticles by preventing agglomeration of the silicon nanoparticles generated by plasma reaction using inductively coupled plasma (ICP), and may permit replacement of the mesh filter even during operation of the apparatus, thereby improving productivity while reducing manufacturing costs. | 10-09-2014 |