Patent application number | Description | Published |
20110163310 | Thin-film transistor having etch stop multi-layer and method of manufacturing the same - A thin-film transistor (TFT) may include a channel layer, an etch stop multi-layer, a source, a drain, a gate, and a gate insulation layer. The etch stop multi-layer may include a first etch stop layer and a second etch stop layer. The second etch stop layer may prevent or reduce an etchant from contacting the channel layer. | 07-07-2011 |
20110169006 | OXIDE THIN FILM TRANSISTORS AND METHODS OF MANUFACTURING THE SAME - Example embodiments are directed to oxide thin film transistors and methods of manufacturing the oxide thin film transistors. The oxide thin film transistor includes an active region in a gate insulation layer and under a source and a drain in a bottom gate structure, thus improving electrical characteristics of the oxide thin film transistor. | 07-14-2011 |
20120025187 | Transistors, methods of manufacturing transistors, and electronic devices including transistors - Transistors, methods of manufacturing the transistors, and electronic devices including the transistors. The transistor may include an oxide channel layer having a multi-layer structure. The channel layer may include a first layer and a second layer that are sequentially arranged from a gate insulation layer. The first layer may be a conductor, and the second layer may be a semiconductor having a lower electrical conductivity than that of the first layer. The first layer may become a depletion region according to a gate voltage condition. | 02-02-2012 |
20120126223 | TRANSISTORS, METHODS OF MANUFACTURING THE SAME AND ELECTRONIC DEVICES INCLUDING TRANSISTORS - An oxide transistor includes: a channel layer formed of an oxide semiconductor; a source electrode contacting a first end portion of the channel layer; a drain electrode contacting a second end portion of the channel layer; a gate corresponding to the channel layer; and a gate insulating layer disposed between the channel layer and the gate. The oxide semiconductor includes hafnium-indium-zinc-oxide (HfInZnO). An electrical conductivity of a back channel region of the channel layer is lower than an electrical conductivity of a front channel region of the channel layer. | 05-24-2012 |
20130043475 | TRANSISTORS AND ELECTRONIC DEVICES INCLUDING THE TRANSISTORS - A transistor may include a light-blocking layer that blocks light incident on a channel layer. The light-blocking layer may include a carbon-based material. The carbon-based material may include graphene oxide, graphite oxide, graphene or carbon nanotube (CNT). The light-blocking layer may be between a gate and at least one of the channel layer, a source and a drain. | 02-21-2013 |
20130140551 | TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS - A transistor may include a channel layer formed of an oxide semiconductor. The oxide semiconductor may include GaZnON, and a proportion of Ga content to a total content of Ga and Zn of the channel layer is about 0.5 to about 4.5 at %. | 06-06-2013 |
20130221343 | TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING TRANSISTOR - A transistor may include a hole blocking layer between a channel layer including oxynitride and an electrode electrically connected to the channel layer. The hole blocking layer may be disposed in a region between the channel layer and at least one of a source electrode and a drain electrode. The channel layer may include, for example, zinc oxynitride (ZnON). A valence band maximum energy level of the hole blocking layer may be lower than a valence band maximum energy level of the channel layer. | 08-29-2013 |
20130306966 | TRANSISTOR HAVING SULFUR-DOPED ZINC OXYNITRIDE CHANNEL LAYER AND METHOD OF MANUFACTURING THE SAME - Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode. | 11-21-2013 |
20140001464 | OXYNITRIDE CHANNEL LAYER, TRANSISTOR INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SAME | 01-02-2014 |