| Patent application number | Description | Published |
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| 20090035889 | CMOS Image Sensor and Method for Manufacturing the Same - Provided is a CMOS image sensor. The CMOS image sensor can include a semiconductor substrate, a blue photodiode region, a red photodiode region, a green photodiode region, an overcoat layer, and microlenses. The substrate can have a first photodiode region, a second photodiode region, and a transistor region. The blue photodiode region is formed having a predetermined depth in the first photodiode region. The red photodiode region is formed in the first photodiode region having a depth greater than that of the blue photodiode region with a gap separating the red photodiode region from the blue photodiode region. The green photodiode region is formed in the second photodiode region having a depth between the depths of the blue and red photodiode regions. The overcoat layer is formed on the semiconductor substrate, and microlenses are formed on the overcoat layer to correspond to the first and second photodiode regions. | 02-05-2009 |
| 20090065822 | Image Sensor and Method for Manufacturing an Image Sensor - Provided are methods for manufacturing an image sensor. A method for manufacturing an image sensor can include: forming a readout circuitry on a substrate; forming an electrical junction region in the substrate; forming an interconnection connected to the electrical junction region; and forming an image sensing device on the interconnection. The readout circuitry can be formed on a first substrate. The electrical junction region can be formed in the first substrate to electrically connect the image sensing device with the readout circuitry. The image sensing device can be formed using a second substrate that is then bonded on the interconnection. | 03-12-2009 |
| 20090065823 | Image Sensor and Method for Manufacturing an Image Sensor - Provided is an image sensor. The image sensor can include a readout circuitry on a first substrate, an electrical junction region in the first substrate electrically connected with the readout circuitry, and an interconnection on the first substrate. The interconnection can be formed for connection to the electrical junction region. An image sensing device can be formed on the interconnection. | 03-12-2009 |
| 20090065824 | Image Sensor and Manufacturing Method Thereof - An image sensor can be formed of a first substrate having a readout circuitry, an interlayer dielectric, and lower lines, and a second substrate having a photodiode. The first substrate comprises a pixel portion and a peripheral portion. The readout circuitry is formed on the pixel portion. The interlayer dielectric is formed on the pixel portion and the peripheral portion. The lower lines pass through the interlayer dielectric to electrically connect with the readout circuitry and the peripheral portion. The photodiode is bonded to the first substrate and etched to correspond to the pixel portion. A transparent electrode is formed on the interlayer dielectric on which the photodiode is formed such that the transparent electrode can be connected with the photodiode and the lower line in the peripheral portion. A first passivation layer can be formed on the transparent electrode. In one embodiment, the first passivation layer includes a trench exposing a portion of the transparent electrode. Then, an upper line can be formed on the peripheral portion and in the trench to shield a lateral side of the photodiode. | 03-12-2009 |
| 20090065825 | Image Sensor and Manufacturing Method Thereof - Provided is an image sensor. The image sensor comprises an interlayer dielectric, lines, and a crystalline semiconductor layer including photodiodes and a device isolation region. The interlayer dielectric can be formed on a first substrate comprising a readout circuitry. The lines pass through the interlayer dielectric to connect with the readout circuitry, and each line is formed according to unit pixel. The crystalline semiconductor layer can be bonded on the interlayer dielectric including the lines. The photodiodes, formed inside the crystalline semiconductor layer, are electrically connected with the lines. The device isolation region comprises conductive impurities and is formed inside the crystalline semiconductor layer so that the photodiodes can be separated according to unit pixels. | 03-12-2009 |
| 20090065826 | Image Sensor and Method for Manufacturing the Same - Provided is an image sensor. The image sensor can include a first substrate, an image sensing device and a light shielding layer. The first substrate includes a readout circuitry and an interconnection. The image sensing device is formed on the interconnection. The light shielding layer is formed in portions of the image sensing device on a boundary between pixels. | 03-12-2009 |
| 20090065827 | Image Sensor and Manufacturing Method Thereof - Provided is an image sensor. The image sensor can include a readout circuitry on a first substrate. An interlayer dielectric is formed on the first substrate, and comprises a lower line therein. A crystalline semiconductor layer is bonded to the interlayer dielectric. A photodiode can be formed in the crystalline semiconductor layer, and comprises a first impurity region and a second impurity region. A via hole can be formed passing through the crystalline semiconductor layer and the interlayer dielectric to expose the lower line. A plug is formed inside the first via hole to connect with only the lower line and the first impurity region. A device isolation region can be formed in the crystalline semiconductor layer to separate the photodiode according to unit pixel. | 03-12-2009 |
| 20090065828 | Image Sensor and Manufacturing Method Thereof - Provided is an image sensor. The image sensor can include a first substrate comprising a pixel portion in which a readout circuitry is provided and a peripheral portion in which a peripheral circuitry is provided. An interlayer dielectric including lines can be formed on the first substrate to connect with the readout circuitry and the peripheral circuitry. A crystalline semiconductor layer can be provided on a portion of the interlayer dielectric corresponding to the pixel portion through a bonding process. The crystalline semiconductor layer can include a first photodiode and second photodiode. The first and second photodiodes can be defined by device isolation trenches in the crystalline semiconductor layer. A device isolation layer can be formed on the crystalline semiconductor layer comprising the device isolation trenches. An upper electrode layer passes through the device isolation layer to connect with a portion of the first photodiode. An expose portion can be formed in the upper electrode layer to selectively expose an upper region of the first photodiode. A passivation layer can be formed on the first substrate on which the expose portion is provided. | 03-12-2009 |
| 20090065885 | Image Sensor and Method for Manufacturing the Same - Provided is an image sensor and method for manufacturing the same. In the image sensor, a first substrate has a lower metal line and a circuitry thereon. A crystalline semiconductor layer contacts the lower metal line and is bonded to the first substrate. A photodiode is provided in the crystalline semiconductor layer and electrically connected with the lower metal line. A light shielding layer is formed in regions of the photodiode. | 03-12-2009 |
| 20090065887 | Image Sensor and Method for Manufacturing the Same - Provided is an image sensor and a method for manufacturing the same. In the image sensor, a first substrate has a lower metal line and circuitry thereon. A crystalline semiconductor layer contacts the lower metal line and is bonded to the first substrate. A photodiode is provided in the crystalline semiconductor layer and electrically connected with the lower metal line. A pixel isolation layer is formed in regions of the photodiode. | 03-12-2009 |
| 20090066822 | Image Sensor and Method for Manufacturing the Same - Provided is an image sensor. The image sensor comprises a first substrate, and an image sensing device on the first substrate. The first substrate includes an interconnection and a readout circuitry. The image sensing device is formed on the interconnection. A top electrode is provided on the image sensing device such that reverse bias can be applied to the top side of the image sensing device. | 03-12-2009 |
| 20090101946 | CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - A CIS and a method for manufacturing the same are provided. The CIS includes an interlayer insulation layer formed on a substrate having a photodiode and a transistor formed thereon; a plurality of color filters formed on the interlayer insulation layer and spaced a predetermined interval apart from each other; a metal sidewall formed to fill the predetermined interval between the plurality of the color filters; and a microlens formed on each of the plurality of color filters. | 04-23-2009 |
| 20090101950 | CMOS IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - A CMOS image sensor and a method for fabricating the same. In one example embodiment, a method for fabricating a CMOS image sensor includes various steps. First, an interlayer dielectric that includes a plurality of metal lines is formed on a semiconductor substrate that includes a photodiode. Next, a trench is formed in the interlayer dielectric. Then, a passivation layer is formed in the trench. Next, the trench is filled by vapor-depositing an additional dielectric layer on the passivation layer. Then, a color filter is formed on the additional dielectric layer. Next, a planarization layer is formed on the color filter. Finally, a micro lens is formed on the planarization layer. | 04-23-2009 |
| 20090166689 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor includes a first substrate, readout circuitry, an electrical junction region, a metal interconnection and an image sensing device. The readout circuitry is formed on and/or over the first substrate and the electrical junction region is formed in the first substrate and electrically connected to the readout circuitry. The metal interconnection is electrically connected to the electrical junction region. The image sensing device is formed on and/or over the metal interconnection. | 07-02-2009 |
| 20090166792 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Embodiments relate to an image sensor and a method of forming an image sensor. According to embodiments, an image sensor may include a first substrate and a photodiode. A circuitry including a metal interconnection may be formed on and/or over the first substrate. The photodiode may be formed over a first substrate, and may contact the metal interconnection. The circuitry of the first substrate may include a first transistor, a second transistor, an electrical junction region, and a first conduction type region. The first and second transistors may be formed over the first substrate. According to embodiments, an electrical junction region may be formed between the first transistor and the second transistor. The first conduction type region may be formed at one side of the second transistor, and may be connected to the metal interconnection. | 07-02-2009 |
| 20090166793 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Embodiments relate to an image sensor. According to embodiments, an image sensor may include a metal interconnection, readout circuitry, a first substrate, an image sensing device, and a second conduction type interfacial layer. The metal interconnection and the readout circuitry may be formed on and/or over the first substrate. The image sensing device may include a first conduction type conduction layer and a second conduction type conduction layer and may be electrically connected to the metal interconnection. The second conduction type interfacial layer may be formed in a pixel interface of the image sensing device. | 07-02-2009 |
| 20090173940 | Image Sensor and Method for Manufacturing the Same - An image sensor can include a first substrate, an amorphous layer, and a photodiode. A circuitry including a metal interconnection can be formed on the first substrate. The amorphous layer is disposed over the first substrate, and contacts the metal interconnection. The photodiode can be formed in a crystalline semiconductor layer and is bonded to the first substrate such that the photodiode contacts the amorphous layer and is electrically connected to the metal interconnection. | 07-09-2009 |
| 20090174025 | Image Sensor and Method for Manufacturing the Same - An image sensor can include a first substrate, an insulating layer, a photodiode, and a via plug. A circuitry including an interconnection can be formed on the first substrate. The insulating layer is formed over the first substrate so that the insulating layer covers the interconnection. The photodiode is formed in a crystalline semiconductor layer and then bonded to the first substrate while contacting the insulating layer. The via plug is provided by removing portions of the photodiode and the insulating layer to expose an upper portion of the interconnection to form a via hole, and filling the via hole with a conductive metal. The via plug electrically connects the photodiode to the interconnection. | 07-09-2009 |
| 20090179242 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Embodiments relate to an image sensor. According to embodiments, an image sensor may include a metal interconnection and readout circuitry over a first substrate, a metal layer over the metal interconnection, and an image sensing device electrically connected to the metal layer. According to embodiments, an electric field may not be generated on and/or over an Si surface. This may contribute to a reduction in a dark current of a 3D integrated CMOS image sensor. | 07-16-2009 |
| 20090236645 | CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - A CIS and a method of manufacturing the same are provided. The CIS includes a device isolation layer formed on a device isolation region of a substrate of a first conductive type, the substrate including an active region and the device isolation region, the active region including a photodiode region and a transistor region; a high-concentration diffusion region of the first conductive type formed around the device isolation layer; a gate electrode formed on the active region of the substrate with a gate insulation layer interposed therebetween; a low-concentration diffusion region of a second conductive type formed on the photodiode region and spaced a predetermined distance apart from the device isolation layer; and a high-concentration diffusion region of the second conductive type formed on the transistor region. | 09-24-2009 |
| 20100078752 | Image Sensor and Method for Manufacturing the Same - An image sensor and manufacturing method thereof are provided. The image sensor includes a readout circuitry, an electrical junction region, an interconnection, and an image sensing device. The readout circuitry can be disposed at a first substrate, and the electrical junction region can be electrically connected to the readout circuitry at the first substrate. The interconnection can be disposed in an interlayer dielectric on the first substrate and electrically connected to the electrical junction region. The image sensing device can include a first conductive type layer and a second conductive type layer on the interconnection. | 04-01-2010 |
| 20100112745 | IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - Provided is an image sensor. The image sensor can include a first substrate comprising a pixel portion in which a readout circuitry is provided and a peripheral portion in which a peripheral circuitry is provided. An interlayer dielectric including lines can be formed on the first substrate to connect with the readout circuitry and the peripheral circuitry. A crystalline semiconductor layer can be provided on a portion of the interlayer dielectric corresponding to the pixel portion through a bonding process. The crystalline semiconductor layer can include a first photodiode and second photodiode. The first and second photodiodes can be defined by device isolation trenches in the crystalline semiconductor layer. A device isolation layer can be formed on the crystalline semiconductor layer comprising the device isolation trenches. An upper electrode layer passes through the device isolation layer to connect with a portion of the first photodiode. An expose portion can be formed in the upper electrode layer to selectively expose an upper region of the first photodiode. A passivation layer can be formed on the first substrate on which the expose portion is provided. | 05-06-2010 |
