Inventors list

Assignees list

Classification tree browser

Top 100 Inventors

Top 100 Assignees


Joo, Gyeonggi-Do

Han-Soo Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
201100625103D NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A non-volatile memory device having a string of a plurality of memory cells that are serially coupled, wherein the string of memory cells includes a plurality of second channels of a pillar type, a first channel coupling lower end portions of the plurality of the second channels with each other, and a plurality of control gate electrodes surrounding the plurality of the second channels.03-17-2011

Hyo Sook Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20100289158ADHESIVE FILM, DICING DIE BONDING FILM AND SEMICONDUCTOR DEVICE USING THE SAME - The present invention relates to an adhesive film, a dicing die bonding film and a semiconductor device. More specifically, the adhesive film of the present invention is characterized by comprising a base film and an adhesive layer and having a yield strength of 20 to 50 gf and a slope of tensile elastic region of 30 to 80 gf/mm at a thickness of 5 to 50 μm. In the present adhesive film, the yield strength and the slope of tensile elastic region are controlled so that the incidence of burrs may be predicted and controlled depending on thickness of an adhesive layer. The dicing die bonding film, and the semiconductor device comprising the same have lower incidence of burrs and an excellent workability and reliability.11-18-2010
20100291739DICING DIE BONDING FILM AND DICING METHOD - The present invention relates to a dicing die bonding film, which is able to maintain good workability and reliability in any semiconductor packaging process, such as adhesive property, gap filling property and pick-up property, while controlling burr incidence in a dicing process and thus contamination of die, and a dicing method. Specifically, the present invention is characterized by optimizing tensile characteristics of the dicing die bonding film, or carrying out the dicing on the parts of the die bonding film in the dicing process and separating it through an expanding process. Therefore, the present invention may regulate physical properties of films so as to have the maximized adhesive property, pick-up property and gap filling property without any specific restriction, while controlling burr incidence in the dicing process and contamination of die. As a result, workability and reliability in a packaging process may be excellently maintained.11-18-2010

Insu Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20080284691Organic light emitting diode display device and driving method thereof - An organic light emitting diode display device and a driving method thereof are disclosed. The organic light emitting diode display device according to an embodiment of the invention comprises a display panel including a plurality of data lines, a plurality of gate line pairs crossing the data lines, and a plurality of light emitting cells which include an organic light emitting diode device, first and second cell driving circuits for alternately driving the organic light emitting diode device; a data voltage generator supplying a data voltage of a first polarity to the data lines; a compensation voltage generator supplying a compensation voltage of a second polarity to the data lines; and a scan driver for sequentially supplying scan pulses to the gate line pairs, wherein the first and second cell driving circuits are alternately supplied with the data voltage and the compensation voltage in response to the scan pulses to alternately driven the organic light.11-20-2008

In-Su Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20090140959Driving apparatus for organic electro-luminescence display device - Disclosed is an apparatus that prevents a degradation of image quality due to a deterioration of a driving apparatus in an organic electro-luminescence display device.06-04-2009

Jae-Hoon Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20090044063Semiconductor memory device and test system of a semiconductor memory device - A semiconductor memory device includes a memory core unit, N data output buffers, N data output ports, and a plurality of test logic circuits. The memory core unit stores test data through N data lines. The N data output buffers are respectively connected to the corresponding N data lines. The N data output ports are connected to the corresponding N data output buffers, and exchange the test data with an external tester respectively. The plurality of test logic circuits receives the test data through the K data lines from the N data lines, performs test logic operation on the received test data, and provides a data output buffer control signal that determines activation of K data output buffers of the N data output buffers in test mode. The semiconductor memory device reduces test cycle.02-12-2009

Jae Hyun Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20110235161DISPLAY METHOD AND DEVICE USING PHOTONIC CRYSTAL CHARACTERISTICS - A display method and device using photonic crystal characteristics are disclosed. In the display method using photonic crystal characteristics when a plurality of particles having electric charges is dispersed in a solvent, an electric field is applied to control inter-particle distance.09-29-2011
20110298880PRINTING MEDIUM, PRINTING METHOD, AND PRINTING APPARATUS USING PHOTONIC CRYSTAL CHARACTERISTIC - The present invention provides a printing medium, a printing method, and a printing apparatus using a photonic crystal characteristic. According to the present invention, the printing medium using the photonic crystal characteristic comprises a medium in which a plurality of particles having electric charges are dispersed, wherein the inter-particle distances of the particles are controlled as a result of at least one of electric fields and magnetic fields are applied to the medium, and the inter-particle distances of the particles are fixed as the energy is applied to the medium.12-08-2011
20120044128DISPLAY METHOD AND DEVICE USING PHOTONIC CRYSTAL CHARACTERISTICS - A display method and device using photonic crystal characteristics are disclosed. In the display method using photonic crystal characteristics in accordance with the present invention, when a plurality of particles having electric charges are dispersed in a solvent, an electric field is applied to control inter-particle distance.02-23-2012

Jeong-Ho Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20090023764Use of Pyrimidinedione Derivative for Preventing or Treating Hepatitis C - A pyrimidinedione derivative of formula (I) or a pharmaceutically acceptable salt thereof exhibits excellent inhibitory activity against hepatitis C virus.01-22-2009

Ji Ho Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20100133585GROWTH OF GERMANIUM EPITAXIAL THIN FILM WITH NEGATIVE PHOTOCONDUCTANCE CHARACTERISTICS AND PHOTODIODE USING THE SAME - A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.06-03-2010
20100144124METHOD OF GROWING PURE Ge THIN FILM WITH LOW THREADING DISLOCATION DENSITY - Provided is a method of growing a pure germanium (Ge) thin film with low threading dislocation density using reduced pressure chemical vapor deposition (RPCVD), which includes growing a Ge thin film on a silicon (Si) substrate at a low temperature, performing real-time annealing for a short period of time, and growing the annealed Ge thin film at a high temperature. The grown Ge single crystal thin film can overcome conventional problems of generation of a Si—Ge layer due to Si diffusion, and propagation of misfit dislocation to a high-temperature Ge thin film.06-10-2010

Jong-Doo Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20090261892Voltage generating circuit and semiconductor device having the same - An active charge pump circuit may include a charge pump circuit, a control circuit, and a charge transfer circuit. The charge pump circuit may generate a charge pumping voltage in response to an active enable signal. The control circuit may generate a charge transfer control signal varying between a ground voltage and a boosted power supply voltage that is twice as much as a power supply voltage in response to the active enable signal. The charge transfer circuit may output the charge pumping voltage as an active voltage in response to the charge transfer control signal.10-22-2009

Junghong Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20100128410FILM CAPACITOR - A film capacitor comprises a case in which a film cell is incorporated and a heat radiating plate including a heat absorption unit being positioned adjacent to the film cell while not being in contact with the film cell for absorbing heat and a heat radiating unit being exposed to the outside of the case. The film capacitor can perform a stable operation and has durable lifespan, even when an inverter adopting the film capacitor is mounted on a trunk room and an engine room, by effectively cooling heat generated from a film cell of the film capacitor.05-27-2010

Jung Hong Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20100089670INVERTER CIRCUIT FOR VEHICLES - The present invention provides an inverter circuit for a vehicle, which includes: a switching unit that includes a plurality of switching elements and switches a direct current into an alternating current; and a variable clamping unit that clamps an overshoot in case the overshoot is generated, and stops the operation of the switching unit in case a system voltage is greater than a clamping breakdown voltage. The circuit enables a voltage (DC input voltage) greater than a breakdown voltage of clamping unit to be used as a system voltage.04-15-2010

Kyong-Hee Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20080237664SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME - Provided are a semiconductor device and a method of driving the semiconductor device. The semiconductor device includes an optical reaction transistor. The optical reaction transistor includes a semiconductor substrate, a tunnel insulation layer formed on the semiconductor substrate, an optical reaction layer formed on the tunnel insulation layer, a blocking insulation layer formed on the optical reaction layer, and a gate electrode formed on the blocking insulation layer.10-02-2008

Patent applications by Kyong-Hee Joo, Gyeonggi-Do KR

Kyung Mi Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20120070520COMPOSITION CONTAINING A BEAN EXTRACT FOR IMPROVING BLOOD CIRCULATION AND INCREASING VASCULAR HEALTH - The present invention relates to a composition containing a bean extract extracted by low-concentration, low-grade alcohol or fractions thereof. The composition exhibits excellent effects in improving blood circulation, improving obesity, and preventing diabetes, hyperlipidemia and the like, and exhibits the effects of alleviating or treating the symptoms of diabetes, hyperlipidemia, and the like. The present invention also relates to a method for improving blood circulation and vascular health.03-22-2012

Moon-Sig Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20100283096SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device including a conductive layer, a diffusion barrier layer formed over the conductive layer, including a refractory metal compound, and acquired after a surface treatment, and a metal silicide layer formed over the diffusion barrier layer. The adhesion between a diffusion barrier layer and a metal silicide layer may be improved by increasing the surface energy of the diffusion barrier layer through a surface treatment. Therefore, although the metal silicide layer is fused in a high-temperature process, it is possible to prevent a void from being caused at the interface between the diffusion barrier layer and the metal silicide layer. Moreover, it is possible to increase the adhesion between a conductive layer and the diffusion barrier layer by increasing the surface energy of the conductive layer through the surface treatment.11-11-2010
20100317166METHOD FOR FABRICATING VERTICAL CHANNEL TYPE NONVOLATILE MEMORY DEVICE - A method for fabricating a vertical channel type nonvolatile memory device includes: stacking a plurality of interlayer insulating layers and a plurality of gate electrode conductive layers alternately over a substrate; etching the interlayer insulating layers and the gate electrode conductive layers to form a channel trench exposing the substrate; forming an undoped first channel layer over the resulting structure including the channel trench; doping the first channel layer with impurities through a plasma doping process; and filling the channel trench with a second channel layer.12-16-2010
20110045666METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device, including forming gate patterns over a substrate, forming conductive layer covering top and sidewalls of each gate pattern, forming a metal layer for a silicidation process over the conductive layer, and silicifying the conductive layer and the gate patterns using the metal layer.02-24-2011
201100584183D NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A 3D nonvolatile memory device includes: a plurality of channel structures including a plurality of channel layers and interlayer dielectric layers, which are alternately stacked, and extended in a first direction; a plurality of word lines extended in a second direction at least substantially perpendicular to the first direction; a plurality of row select lines connected to the plurality of channel layers, respectively, and extended in the second direction; and a plurality of column select lines connected to the plurality of channel structures, respectively, and extended in the first direction.03-10-2011
20110291176NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A non-volatile memory device includes a pair of columnar cell channels vertically extending from a substrate, a doped pipe channel arranged to couple lower ends of the pair of columnar cell channels, insulation layers over the substrate in which the doped pipe channel is buried, memory layers arranged to surround side surfaces of the columnar cell channels, and control gate electrodes arranged to surround the memory layers.12-01-2011
20120021574METHOD FOR FABRICATING VERTICAL CHANNEL TYPE NONVOLATILE MEMORY DEVICE - A method for fabricating a vertical channel type nonvolatile memory device includes: stacking a plurality of interlayer insulating layers and a plurality of gate electrode conductive layers alternately over a substrate; etching the interlayer insulating layers and the gate electrode conductive layers to form a channel trench exposing the substrate; forming an undoped first channel layer over the resulting structure including the channel trench; doping the first channel layer with impurities through a plasma doping process; and filling the channel trench with a second channel layer.01-26-2012

Patent applications by Moon-Sig Joo, Gyeonggi-Do KR

Pan-Yuh Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20100214973METHOD FOR FORWARDING DIRECT MESSAGE IN PARTIAL FUNCTION OFDMA RELAY SYSTEM - A method for forwarding direct message in partial function OFDMA relay system is proposed in present invention. In present invention, the operations like forwarding and reflecting are fixed for the PFRS. Therefore, the BS performs scheduling according to the fixed operations so as to make the PFRS actually has the function of direct message forwarding.08-26-2010
20100284322SYSTEM AND METHOD FOR TRANSMITTING DOWNLINK SCHEDULE IN WIMAX/WIBRO RELAY SYSTEM - A system and method for transmitting downlink schedule in a WiMax/WiBro relay system is proposed in present invention. In present invention, the task of transmitting the schedule is dispersed from the BS to both of the BS and RS so that several RS may transmit the schedule items simultaneously and therefore the resource of the system is saved.11-11-2010

Seong Ah Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20090050923LIGHT EMITTING DIODE PACKAGE - Provided is an LED package including a printed circuit board (PCB); a conductive structure that is formed on the PCB and is composed of any one selected from a silicon structure and an aluminum structure; and an LED chip that is mounted on the PCB and is electrically connected to the PCB through the conductive structure.02-26-2009
20100127290LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - The present invention relates to a light emitting diode package and a manufacturing method thereof.05-27-2010
20100227424LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - The present invention relates to a light emitting diode package and a manufacturing method thereof.09-09-2010

Seung Ki Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20090183772POLYCRYSTALLINE SILICON SOLAR CELL HAVING HIGH EFFICIENCY AND METHOD FOR FABRICATING THE SAME - Disclosed herein is a method of forming a light-absorbing layer of a polycrystalline silicon solar cell, including: forming a polycrystalline silicon layer on a back electrode; forming an intrinsic amorphous silicon layer on the polycrystalline silicon layer; and heat-treating the transparent insulating substrate to vertically crystallize the intrinsic amorphous silicon layer using the polycrystalline silicon layer as a seed for crystallization through a metal induced vertical crystallization (MIVC) process to form the intrinsic amorphous silicon layer into a light-absorbing layer made of polycrystalline silicon, and is a method of fabricating a high-efficiency polycrystalline silicon solar cell using the light-absorbing layer.07-23-2009

Sung Hyun Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20100134403LIGHT GUIDE PANEL COMPRISING SYMMETRIC FORNT PRISM AND ASYMMETRIC FRONT PRISM FOR BACK LIGHT UNIT OF LCD - Disclosed herein is a light guide panel for a backlight unit of a liquid crystal display (LCD). The light guide panel enables adjustment in viewing angle and brightness at a specific position and angle by controlling a cross-sectional shape of front prisms of the light guide panel.06-03-2010

Sung Joong Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20100074013Semiconductor Device and Method of Fabricating the Same - A method of fabricating a semiconductor device and a flash memory device are provided. The method of fabricating the semiconductor device includes: forming a nitride film on a semiconductor substrate; forming a sacrificial vertical structure on the nitride film; forming sacrificial spacers on lateral surfaces of the sacrificial vertical structure; performing an initial patterning of the nitride film using the sacrificial vertical structure and the sacrificial spacers as etch masks; removing the sacrificial spacers after the initial patterning of the nitride film and forming gate electrodes on the lateral surfaces of the sacrificial vertical structure; and removing the sacrificial vertical structure from between the gate electrodes and performing a secondary patterning of the nitride film using the gate electrodes as etch masks.03-25-2010

Sun Woong Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20110019618WIRELESS TERMINAL AND METHOD OF DATA COMMUNICATION THEREIN - A wireless terminal and a method of data communication between such wireless terminals includes a first wireless terminal determining whether a second wireless terminal is located within a preset distance, the first wireless terminal determining whether the first wireless terminal is tilted at more than a preset slope and the first wireless terminal transmitting a preset packet of data to the second wireless terminal where it determines that the second wireless terminal is located within the preset distance from the first wireless terminal and the first wireless terminal is tilted at more than the preset slope.01-27-2011

Yongsik Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20110276740CONTROLLER FOR SOLID STATE DISK WHICH CONTROLS ACCESS TO MEMORY BANK - A controller for a solid state disk is provided. The controller includes a storage module to store an index of at least one idle bank among a plurality of memory banks, and a control module to control an access to the at least one idle bank using the stored index. Here, the access to the at least one idle bank may be controlled based on a state of a channel corresponding to each of the at least one idle bank.11-10-2011

Yong-Suk Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20100008177SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a clock input unit configured to receive a first clock and a second clock from the external. The memory device further includes a frequency conversion unit configured to convert a frequency of the second clock so that the frequency of the second clock becomes identical to a frequency of the first clock, a phase comparison unit configured to compare a phase of the first clock with that of a clock outputted from the frequency conversion unit, and output a comparison signal corresponding to the comparison result, a logic level change unit configured to change a logic level of a training information signal when a logic level of the comparison signal is fixed for a given time after being changed, and a signal transfer unit configured to transfer the training information signal to the external.01-14-2010

Yong Sup Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20090314622OIL EXTRACTION DEVICE FOR PYROLYSIS OF PLASTICS WASTE MATERIAL AND EXTRACTION METHOD THEREOF - An oil extraction system and method for pyrolyzing waste plastic materials are disclosed. The oil extraction system includes: a waste feeding device for supplying waste plastic materials contained in a hopper to a primary pyrolysis chamber through a feed inlet, wherein the primary pyrolysis chamber pyrolyzes the supplied waste plastic materials; a double jacket furnace having a burner and for heating the primary pyrolysis chamber loaded into a burning room of the furnace; a rotation device for rotating the primary pyrolysis chamber loaded into the burning room of the furnace; a secondary pyrolysis chamber for re-pyrolyzing gas produced in the primary pyrolysis chamber, and for separating carbides and residue; a condenser for liquefying the gas separated from the secondary plyrolysis chamber by compression and forming oil; and an oil-water separator for separating oil and water condensed in the condenser.12-24-2009

Young Ho Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20080242304Inter-System Handover - A method of handover in a wireless communication system in which an asynchronous system and a synchronous system are mixed is disclosed. The method comprises the steps of: the asynchronous system ordering a dual mode mobile terminal to perform a handover from the asynchronous system to the synchronous system; when the handover order is received at the mobile terminal, the mobile terminal transmitting a frame or a preamble through a reverse traffic channel to the synchronous system, reporting to the synchronous system that the handover is completed and initiating a timer of the mobile terminal which is set according to a predetermined time; the mobile terminal switching from an asynchronous vocoder into a synchronous vocoder when the timer expires; and the wireless communication system switching vocoders of asynchronous and synchronous MSCs when the report is received.10-02-2008
20090129359Hand Over Method From Asynchronous Mobile Communication Network to Synchronous Mobile Communication Network - The present invention relates to a method of performing handover from an asynchronous mobile communication network to a synchronous mobile communication network. If the access network of the asynchronous mobile communication network (05-21-2009
20100080149SYSTEM AND METHOD FOR PROVIDING PACKET NETWORK-BASED MULTIMEDIA RINGBACK TONE SERVICE - Disclosed herein is a system and method for providing a packet network-based MRBT service. In the method, when an originating MSC (04-01-2010

Patent applications by Young Ho Joo, Gyeonggi-Do KR

Young-Hun Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20100166075METHOD AND APPARATUS FOR CODING VIDEO IMAGE - A method and apparatus for coding a video image is provided, in which a first macro block is coded with intra coding modes, the number of which corresponds to the first macro block, a first intra coding mode having a minimum value and a first minimum value to which the first intra coding mode is applied are acquired, the first minimum value is compared with a threshold that is set for fast coding mode search, and it is determined whether to code a second macro block with intra coding modes, the number of which corresponds to the second macro block, based on the comparison.07-01-2010

Young-Jae Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20080248632Methods of Fabricating Multi-Bit Phase-Change Memory Devices and Devices Formed Thereby - Methods of forming integrated circuit devices include forming at least one non-volatile memory cell on a substrate. The memory cell includes a plurality of phase-changeable material regions therein that are electrically coupled in series. This plurality of phase-changeable material regions are collectively configured to support at least 2-bits of data when serially programmed using at least four serial program currents. Each of the plurality of phase-changeable material regions has different electrical resistance characteristics when programmed.10-09-2008
20080277720NON-VOLATILE MEMORY DEVICE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME - A non-volatile memory device which can be highly-integrated without a decrease in reliability, and a method of fabricating the same, are provided. In the non-volatile memory device, a first doped layer of a first conductivity type is disposed on a substrate. A semiconductor pillar of a second conductivity type opposite to the first conductivity type extends upward from the first doped layer. A first control gate electrode substantially surrounds a first sidewall of the semiconductor pillar. A second control gate electrode substantially surrounds a second sidewall of the semiconductor pillar and is separated from the first control gate electrode. A second doped layer of the first conductivity type is disposed on the semiconductor pillar.11-13-2008

Yung Hyup Joo, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20120070520COMPOSITION CONTAINING A BEAN EXTRACT FOR IMPROVING BLOOD CIRCULATION AND INCREASING VASCULAR HEALTH - The present invention relates to a composition containing a bean extract extracted by low-concentration, low-grade alcohol or fractions thereof. The composition exhibits excellent effects in improving blood circulation, improving obesity, and preventing diabetes, hyperlipidemia and the like, and exhibits the effects of alleviating or treating the symptoms of diabetes, hyperlipidemia, and the like. The present invention also relates to a method for improving blood circulation and vascular health.03-22-2012