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Jonghyurk Park

Jonghyurk Park, Daegu-City KR

Patent application numberDescriptionPublished
20080213567HETERO-JUNCTION MEMBRANE AND METHOD OF PRODUCING THE SAME - Provided is a hetero-junction membrane including: a first layer comprising first nanoparticles of a first conductive type; and a second layer comprising second nanoparticles of a second conductive type, wherein the first layer and the second layer are joined to each other. The hetero-junction membrane has advantages in that actuating efficiency is much higher, the direction of actuating can be predicted and the manufacturing processes are simple compared to conventional bucky paper formed of a single layer.09-04-2008
20090123649METHOD OF MANUFACTURING SILICON NANOTUBES USING DOUGHNUT-SHAPED CATALYTIC METAL LAYER - Provided is a method of manufacturing silicon nanotubes including forming non-catalytic metal islands on a substrate; forming catalyst metal doughnuts to surround the non-catalytic metal islands; and growing silicon nanotubes on the catalyst metal doughnuts. The silicon nanotubes are efficiently grown using the catalyst metal doughnuts.05-14-2009
20090294762COMPOUND HAVING THIOL ANCHORING GROUP, METHOD OF SYNTHESIZING THE SAME, AND MOLECULAR ELECTRONIC DEVICE HAVING MOLECULAR ACTIVE LAYER FORMED USING THE COMPOUND - Provided are an electron donor-azo-electron acceptor compound having a thiol-based anchoring group, a method of synthesizing the compound, and a molecular electronic device having a molecular active layer formed of the compound. The compound for forming a molecular electronic device includes an azo compound that has a dinitrothiophene group and an aminobenzene group having thiol derivatives. The compound forms a molecular active layer in the molecular electronic devices. The molecular active layer is self-assembled on an electrode using the thiol derivative in the azo compound as an anchoring group. The molecular active layer in the molecular electronic device forms a switching device switching between an on-state and an off-state in response to a voltage applied to electrodes or a memory device storing a predetermined electric signal in response to a voltage applied to the electrodes.12-03-2009
20090325365METHOD OF MANUFACTURING SILICON NANOWIRES USING SILICON NANODOT THIN FILM - Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.12-31-2009
20100090210COMPOUND HAVING THIOL ANCHORING GROUP, METHOD OF SYNTHESIZING THE SAME, AND MOLECULAR ELECTRONIC DEVICE HAVING MOLECULAR ACTIVE LAYER FORMED USING THE COMPOUND - Provided are an electron donor-azo-electron acceptor compound having a thiol-based anchoring group, a method of synthesizing the compound, and a molecular electronic device having a molecular active layer formed of the compound. The compound for forming a molecular electronic device includes an azo compound that has a dinitrothiophene group and an aminobenzene group having thiol derivatives. The compound forms a molecular active layer in the molecular electronic devices. The molecular active layer is self-assembled on an electrode using the thiol derivative in the azo compound as an anchoring group. The molecular active layer in the molecular electronic device forms a switching device switching between an on-state and an off-state in response to a voltage applied to electrodes or a memory device storing a predetermined electric signal in response to a voltage applied to the electrodes.04-15-2010
20100297808MOLECULAR ELECTRONIC DEVICE INCLUDING ORGANIC DIELECTRIC THIN FILM AND METHOD OF FABRICATING THE SAME - Provided are a molecular electronic device and a method of fabricating the molecular electronic device. The molecular electronic device includes a substrate, an organic dielectric thin film formed over the substrate, a molecular active layer formed on the organic dielectric thin film and having a charge trap site, and an electrode formed on the molecular active layer. The organic dielectric thin film may be immobilized on the electrode or a Si layer by a self-assembled method. The organic dielectric thin film may include first and second molecular layers bound together through hydrogen bonds. An organic compound may be self-assembled over the substrate to form the organic dielectric thin film. The organic compound may include an M′-R-T structure, where M′, R and T represent a thiol or silane derivative, a saturated or unsaturated C11-25-2010

Patent applications by Jonghyurk Park, Daegu-City KR

Jonghyurk Park, Daegu KR

Patent application numberDescriptionPublished
20100134208RADIO FREQUENCY DEVICE - An RF device is provided. The RF device includes a vibratile carbon nanotube having a nanotube natural frequency (f06-03-2010
20100144088METHOD FOR FORMING METAL OXIDE AND METHOD FOR FORMING TRANSISTOR STRUCTURE WITH THE SAME - Provided is a method for forming a metal oxide. A method for forming a metal oxide according to embodiments of the present invention includes preparing a metal oxide precursor solution including a dopant chemical species, preparing an alcohol-based solution including a basic chemical species, reacting the alcohol-based solution with the metal oxide precursor solution to form a reactant, and purifying the reactant to form a metal oxide.06-10-2010

Jonghyurk Park, Daejeon-City KR

Patent application numberDescriptionPublished
20100012919GAS SENSOR HAVING ZINC OXIDE NANO-STRUCTURES AND METHOD OF FABRICATING THE SAME - Provided are a gas sensor using a plurality of zinc oxide nano-structures on which metal islands are formed, and a method of fabricating the same. The gas sensor comprises zinc oxide nano-structures formed on a substrate, a plurality of metal islands coated on a surface of each zinc oxide nano-structure and separated from one another, a first electrode electrically connected to one end of each zinc oxide nano-structure through the substrate, a second electrode electrically connected to the other end of each zinc oxide nano-structure, and a current variation-measuring unit electrically connected to each of the first electrode and the second electrode so as to measure a variation in the amount of current flowing between the first electrode and the second electrode. In order to form the plurality of metal islands separated from one another on the surface of each zinc oxide nano-structure using a wet process, metal components of a metal material are coated on the surface of each zinc oxide nano-structure using the solution in which the metal material is solved.01-21-2010