| Patent application number | Description | Published |
|---|
| 20090309667 | RING OSCILLATOR USING ANALOG PARALLELISM - An apparatus including a ring oscillator and related methods are disclosed. The ring oscillator includes at least two ring loops. A first ring loop includes a plurality of series coupled delay cells. At least one additional ring loop includes a plurality of series coupled delay cells. The at least one additional ring loop is coupled to the first ring loop by one or more common delay cells shared between the first ring loop and the at least one additional ring loops. | 12-17-2009 |
| 20100237463 | Selective Fabrication of High-Capacitance Insulator for a Metal-Oxide-Metal Capacitor - Methods and devices of a capacitor in a semiconductor device having an increased capacitance are disclosed. In a particular embodiment, a method of forming a capacitor is disclosed. A section of a first insulating material between a first metal contact element and a second metal contact element is removed to form a channel. A second insulating material is deposited in the channel between the first metal contact element and the second metal contact element. | 09-23-2010 |
| 20100295600 | Method and Apparatus for Providing Through Silicon VIA (TSV) Redundancy - An apparatus includes a first die having a first bus, a second die having a second bus stacked on the first die, a plurality of through silicon vias connecting the first bus to the second bus, and first control logic for sending data to identified ones of the plurality of through silicon vias. Also, optionally, second control logic for determining a first set of the plurality of through silicon vias that are nonfunctional, wherein the second control logic is configured to send information to the first control logic identifying the first set of the plurality of through silicon vias or identifying a second set of through silicon vias that are functional. Also a method of sending signals through a plurality of through silicon vias. | 11-25-2010 |
| 20110031586 | High Breakdown Voltage Embedded MIM Capacitor Structure - Methods and devices related to a plurality of high breakdown voltage embedded capacitors are presented. A semiconductor device may include gate material embedded in an insulator, a plurality of metal contacts, and a plurality of capacitors. The plurality of capacitors may include a lower electrode, a dielectric formed so as to cover a surface of the lower electrode, and an upper electrode formed on the dielectric. Further, the plurality of contacts may connect each of the lower electrodes of the plurality of capacitors to the gate material. The plurality of capacitors may be connected in series via the gate material. | 02-10-2011 |
| 20110035529 | Partitioning a Crossbar Interconnect in a Multi-Channel Memory System - A method includes identifying a first set of masters and a second set of masters from a plurality of masters. The plurality of masters have access to a multi-channel memory via a crossbar interconnect. The method includes partitioning the crossbar interconnect into a plurality of partitions comprising at least a first partition corresponding to the first set of masters and a second partition corresponding to the second set of masters. The method also includes allocating a first set of buffer areas within the multi-channel memory. The first set of buffer areas correspond to the first set of masters. The method further includes allocating a second set of buffer areas within the multi-channel memory. The second set of buffers correspond to the second set of masters. | 02-10-2011 |
| 20110050357 | Transformer Signal Coupling for Flip-Chip Integration - Methods and apparatuses for transformer signal coupling for flip-chip circuit assemblies are presented. A device for coupling dies in flip-chip circuit assembly may include a first die associated with a first fabrication process and a first inductor physically coupled to the first die, where the first inductor receives an RF input signal. The device may further include a second die associated with a second fabrication process, and a second inductor physically coupled to the second die, where the second inductor is positioned so the first inductor can inductively couple the RF signal in the second inductor. A method for providing an inductive coupling between dies may include fabricating a first inductor on a first die using a passive process, fabricating a second inductor on a second die using a semiconductor process, and assembling each die so the first and second inductor are configured as a transformer. | 03-03-2011 |
| 20110068433 | FORMING RADIO FREQUENCY INTEGRATED CIRCUITS - Method of forming a radio frequency integrated circuit (RFIC) is provided. The RFIC comprises one or more electronic devices formed in a semiconductor substrate and one or more passive devices on a dielectric substrate, arranged in a stacking manner. Electrical shield structure is formed in between to shield electronic devices in the semiconductor substrate from the passive devices in the dielectric substrate. Vertical through-silicon-vias (TSVs) are formed to provide electrical connections between the passive devices in the dielectric substrate and the electronic devices in the semiconductor substrate. | 03-24-2011 |
| 20110075393 | Semiconductor Die-Based Packaging Interconnect - An electronic system includes a system board and a packaging substrate mounted on the system board. One or more semiconductor dies are mounted on the packaging substrate and coupled to the system board. The system also includes one or more semiconductor die-based packaging interconnects between the system board and the packaging substrate. The semiconductor die-based packaging interconnect has a first face coupled to the system board and a second face coupled to the packaging substrate. Through silicon vias located in the semiconductor die-based packaging interconnect enable communication between the system board and the one or more semiconductor dies. The semiconductor die-based packaging interconnects may include passive devices, active devices, and/or circuitry. For example, the semiconductor die-based packaging interconnect may provide impedance matching, decoupling capacitance, and/or amplifiers for minimizing insertion loss. | 03-31-2011 |
| 20110084358 | Apparatus and Method for Through Silicon via Impedance Matching - Methods and apparatuses for matching impedances in a flip-chip circuit assembly are presented. An apparatus for matching impedances in a flip-chip circuit assembly may include a first circuit associated with a first die and a through silicon via (TSV) coupling the first circuit to a second circuit. The apparatus may further include a first impedance matching inductor interposed between the TSV and the second circuit. A method for matching impedances in a flip-chip circuit assembly may include providing a die having a first circuit, and forming a TSV over the die. The method may further include providing a second circuit and forming a first impedance matching inductor interposed between the TSV and second circuit. | 04-14-2011 |
| 20110084765 | Three Dimensional Inductor and Transformer - A three dimensional on-chip inductor, transformer and radio frequency amplifier are disclosed. The radio frequency amplifier includes a pair of transformers and a transistor. The transformers include at least two inductively coupled inductors. The inductors include a plurality of segments of a first metal layer, a plurality of segments of a second metal layer, a first inductor input, a second inductor input, and a plurality of through silicon vias coupling the plurality of segments of the first metal layer and the plurality of segments of the second metal layer to form a continuous, non-intersecting path between the first inductor input and the second inductor input. The inductors can have a symmetric or asymmetric geometry. The first metal layer can be a metal layer in the back-end-of-line section of the chip. The second metal layer can be located in the redistributed design layer of the chip. | 04-14-2011 |
| 20110087846 | Accessing a Multi-Channel Memory System Having Non-Uniform Page Sizes - A method includes predicting a memory access pattern of each master of a plurality of masters. The plurality of masters can access a multi-channel memory via a crossbar interconnect, where the multi-channel memory has a plurality of banks The method includes identifying a page size associated with each bank of the plurality of banks The method also includes assigning at least one bank of the plurality of banks to each master of the plurality of masters based on the memory access pattern of each master. | 04-14-2011 |
