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Jong Won Lee

Jong Won Lee, Gunpo-City KR

Patent application numberDescriptionPublished
20100313862SYSTEM FOR CONTROLLING CONTINUOUS VARIABLE VALVE LIFT ACTUATOR OF DIESEL ENGINE, AND METHOD THEREOF - A system for controlling a continuous variable valve lift actuator of a diesel engine and a method thereof stabilize exhaust gas and improve performance by variably controlling lift and timing of intake and exhaust valves based on combustion state and driving purpose. The method may include, recognizing a driving purpose and combustion state by detecting driving conditions, temperature of exhaust gas at predetermined locations on an exhaust pipe, and NOx concentration contained in the exhaust gas, determining target position and timing of intake and exhaust valves by applying the driving purpose and the combustion state to a predetermined map table, controlling position and timing of the intake and exhaust valves by actuating a CVVA, detecting combustion pressure in a combustion chamber, and modifying fuel injection amount according to the combustion pressure.12-16-2010

Jong Won Lee, Ichon KR

Patent application numberDescriptionPublished
20080253219ACTIVE DRIVER CONTROL CIRCUIT FOR SEMICONDUCTOR MEMORY APPARATUS - An active driver control circuit for a semiconductor memory apparatus includes an asynchronous decoding unit that can be activated in response to a bank selection signal, when an external command is a read or write command, can generate an enabled read/write enable signal, and when a precharge signal is enabled, disable the enabled read/write enable signal, a synchronous decoding unit that can be activated in response to the bank selection signal, can generate an enabled active enable signal when the external command is an active command, when the external command is a precharge command, can generate the precharge signal, and output the active enable signal and the precharge signal in synchronization with a clock, and an active driver control signal generating unit that can generate an active driver control signal in response to the active enable signal and the read/write enable signal.10-16-2008
20090059691SEMICONDUCTOR INTEGRATED CIRCUIT AND MULTI TEST METHOD THEREOF - A semiconductor integrated circuit includes a multi-mode control signal generating section that enables one of up and down mat input/output switch control signals for controlling input/output switches in up and down mats according to up/down information addresses during a read operation mode, a multi-mode decoding section that simultaneously activates multi mat selection signals corresponding to one of the up mats and one of the down mats according to row addresses in an active operation mode, and a mat control section that receives the up and down mat input/output switch control signals and the multi mat selection signals and enables word lines and input/output switches in the mats corresponding to the signals.03-05-2009
20090207673SEMICONDUCTOR INTEGRATED CIRCUIT WITH MULTI TEST - A semiconductor integrated circuit includes a multi-mode control signal generating unit configured to control an activation of a up/down mat I/O switch control signal, which controls I/O switches in a up/down mat, according to a multi-test mode signal and a read/write discriminating signal, a multi-mode decoder configured to output multi-mat select signals to simultaneously activate a plurality of mats according to a multi-test mode active write signal, and a mat controller configured to enable word lines and the I/O switches according to the up/down mat I/O switch control signal and the multi-mat select signals.08-20-2009
20100296358ACTIVE DRIVER CONTROL CIRCUIT FOR SEMICONDUCTOR MEMORY APPARATUS - An active driver control circuit for a semiconductor memory apparatus includes an asynchronous decoding unit that can be activated in response to a bank selection signal, when an external command is a read or write command, can generate an enabled read/write enable signal, and when a precharge signal is enabled, disable the enabled read/write enable signal, a synchronous decoding unit that can be activated in response to the bank selection signal, can generate an enabled active enable signal when the external command is an active command, when the external command is a precharge command, can generate the precharge signal, and output the active enable signal and the precharge signal in synchronization with a clock, and an active driver control signal generating unit that can generate an active driver control signal in response to the active enable signal and the read/write enable signal.11-25-2010

Patent applications by Jong Won Lee, Ichon KR

Jong Won Lee, Gwangmyeong-Si KR

Patent application numberDescriptionPublished
20090003106Precharge control circuit - A precharge control circuit includes a precharge control unit and a precharge unit. The precharge control unit controls and outputs a precharge signal in response to a read command signal, a write command signal, and a first signal. The precharge unit precharges local input/output lines in response to a signal output from the precharge control unit.01-01-2009
20090168564Strobe signal controlling circuit - A strobe signal controlling circuit is provided which includes an initial write controller configured to outputs a write pulse signal, which is activated in a write command, in synchronization with a clock signal, a DQS signal outputting unit configured to outputs a write DQS signal by synchronizing an output signal of the initial write controller to the clock signal, a control signal generator configured to generates a control signal in response to the output signal of the initial write controller, and a reset signal generator configured to responds to a reset signal and a DQS enable signal to output a reset signal to the DQS signal outputting module in synchronization with the control signal.07-02-2009
20100027358Semiconductor memory device capable of read out mode register information through DQ pads - A semiconductor memory device is provided that is capable of reading out mode register information stored in a register adapted for LPDDR2 (Low Power DDR2), through DQ pads. The semiconductor memory device includes a mode register control unit configured to receive address signals, a mode register write signal and a mode register read signal and generate a flag signal and at least one output information signal, and a global I/O line latch unit for transferring the output information signal to a global I/O line in response to the flag signal.02-04-2010
20100141309Initialization circuit and bank active circuit using the same - An initialization circuit comprises a section signal generator generating a section signal, of which a prescribed section is enabled in response to a power-up signal, a first oscillator generating a first period signal in response to the section signal, a first period multiplier generating a first multiplied signal by multiplying a period of the first period signal, and a signal selector transferring the first multiplied signal or a second multiplied signal selectively as a self-refresh enable signal in response to the section signal.06-10-2010
20100141333Reservoir capacitor array circuit - A reservoir capacitor array circuit capable of allowing an internal voltage to be maintained stably, comprises a plurality of reservoir capacitors, each of the reservoir capacitors including a switch element which is connected between a power source voltage and a prescribed node and switched in response to a test enable signal which is enabled depending on a test mode signal or whether the fuse is cut or not, and a capacitor connected between the node and a ground voltage.06-10-2010
20100142305Source control circuit and semiconductor memory device using the same - A source control circuit comprises a control signal generating unit for generating a standby signal which is enabled in a standby condition, and a switching unit connected between a power line for supplying power to an internal circuit and an external power and controlling the supply of the external power in response to the standby signal.06-10-2010
20100157716Sub word line driving circuit - A sub word line driving circuit includes a FX driver which buffers an inverted FX signal to generate a FX signal in response to a control signal, and a sub word line driver which is supplied with the FX signal and receives a main word line signal to drive a sub word line signal.06-24-2010

Jong Won Lee, Gunpo-Si KR

Patent application numberDescriptionPublished
20090241874VARIABLE VALVE ACTUATOR - A variable valve actuator presses rocker arms using force transmitted from a drive cam to open/close valves of an engine, and includes a swing arm, which is pivotably coupled to the engine on a first side thereof, and at least two pressing means, which come into contact with the rocker arms on first sides thereof, are pivotably coupled to a second side of a swing arm on second sides thereof, and press the rocker arms when pressed by the drive cam. Thereby, the variable valve actuator can adjust a lift time and a lift distance of each valve without changing positions of the drive cams and the camshaft, and more easily adjust the lift time of each valve, and have very excellent applicability to the engine due to simple internal configuration.10-01-2009

Jong Won Lee, Chungcheongbuk-Do KR

Patent application numberDescriptionPublished
20090208551Biological implantation material and method for preparing same - The present invention relates to a biological implantation material and method of preparing the same, which comprises the steps of:08-20-2009

Jong Won Lee, Busan KR

Patent application numberDescriptionPublished
20110109199ELECTROMECHANICAL TRANSDUCER AND METHOD FOR MANUFACTURING THE SAME - Disclosed is an electromechanical transducer and the method for manufacturing the same, which can detect or control deformation and vibration of a structure and flow of fluids by applying controlling forces. The electromechanical transducer of the present invention comprises a base substrate to which initial stress is applied; an electro-active material layer attached on the base substrate; and electrodes installed on the top and bottom side of the electro-active material layer for actuating the electro-active material layer, the base substrate and the electro-active material layer which is deformed when initial stress is removed from the base substrate so that the base substrate and the electro-active material layer have curvatures.05-12-2011

Jong Won Lee, Cheongwon-Gun KR

Patent application numberDescriptionPublished
20110189301METHOD FOR PREPARING CONTACT LENS-SHAPED AMNIOTIC DRESSING - The present invention relates to a method for preparing a contact lens-shaped amniotic dressing and a contact lens-shaped amniotic dressing prepared therefrom for treating ocular surface diseases, which does not require the use of sutures or an adhesion material. The inventive contact lens-shaped amniotic dressing is capable of solving the problems associated with suturing an amniotic membrane, e.g., highly delicate surgical techniques of suturing, long surgery time, stitch abscess, granuloma formation, tissue necrosis, and discomfort of patients; and the problems associated with the use of a support, e.g., the elimination of the support by eye blinking, breaking of the support, and discomfort.08-04-2011

Jong Won Lee, Icheon-Si KR

Patent application numberDescriptionPublished
20110249516INTERNAL VOLTAGE GENERATION DEVICE - An internal voltage generation device is disclosed which includes an internal voltage generator operated in response to an enable signal, the internal voltage generator generating an internal voltage using a reference voltage, and a sub-voltage generator for driving an output terminal of the internal voltage generator to a predetermined voltage level in response to a control signal.10-13-2011