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Jong Seob Kim
Jong Seob Kim, Daejeon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20080213509 | Composition for LC alignment film using diamine having dendron side chain - Disclosed herein is an LC aligning agent using diamine having dendron side chains. In detail, the present invention relates to a composition for an LC alignment film which employs diamine having dendron side chains to produce polyamic acid, followed by imidization. When the LC alignment film is applied to a liquid crystal display device, high heat resistance, high penetration in a visible ray range, excellent alignment, and a high voltage holding ratio are assured. Even though it contains a small amount of functional diamine, a high pretilt angle can be assured. Thus, the pretilt angle is easily controlled and a vertical aligning force is improved. | 09-04-2008 |
| 20080305441 | Hardmask composition having antirelective properties and method of patterning material on susbstrate using the same - A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formulae 1, 2 and 3: | 12-11-2008 |
| 20100167553 | Organosilane polymer with improved gap-filling property for semiconductor device and coating composition using the same - A polymer for gap-filling in a semiconductor device, the polymer being prepared by polycondensation of hydrolysates of the compound represented by Formula 1, the compound represented by Formula 2, and one or more compounds represented by Formulae 3 and 4: | 07-01-2010 |
| 20100320573 | ORGANOSILANE POLYMERS, HARDMASK COMPOSITIONS INCLUDING THE SAME AND METHODS OF PRODUCING SEMICONDUCTOR DEVICES USING ORGANOSILANE HARDMASK COMPOSITIONS - Provided herein, according to some embodiments of the invention, are organosilane polymers prepared by reacting organosilane compounds including | 12-23-2010 |
| 20110097672 | Polymer having antireflective properties and high carbon content, hardmask composition including the same, and process for forming a patterned material layer - An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C as set forth in the specification. | 04-28-2011 |
Jong Seob Kim, Uiwang-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090176165 | Polymer composition, hardmask composition having antireflective properties, and associated methods - A polymer composition includes an aromatic ring-containing polymer represented by Formula 1: | 07-09-2009 |
| 20100167203 | Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same - A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5. | 07-01-2010 |
| 20100279509 | Silicon-based hardmask composition and process of producing semiconductor integrated circuit device using the same - A silicon-based hardmask composition, including an organosilane polymer represented by Formula 1: | 11-04-2010 |
| 20110129981 | FILLER FOR FILLING A GAP AND METHOD FOR MANUFACTURING SEMICONDUCTOR CAPACITOR USING THE SAME - A filler for filling a gap includes a hydrogenated polysiloxazane having an oxygen content of about 0.2 to about 3 wt %. A chemical structure of the hydrogenated polysiloxazane includes first, second, and third moieties represented by the following respective Chemical Formulas 1-3: | 06-02-2011 |
Jong Seob Kim, Daejeon KR
| Patent application number | Description | Published |
|---|---|---|
| 20100093923 | COMPOUND FOR GAP-FILLING OF SEMICONDUCTOR DEVICE AND COATING COMPOSITION USING THE SAME - A compound for filling small gaps in a semiconductor device and a composition comprising the compound are provided. The composition can completely fill holes having a diameter of 70 nm or less and an aspect ratio (i.e. height/diameter ratio) of 1 or more in a semiconductor substrate without any defects, e.g., air voids, by a general spin coating technique. In addition, the composition can be completely removed from holes at a controllable rate without leaving any residue by the treatment with a hydrofluoric acid solution after being cured by baking. Furthermore, the composition is highly stable during storage. | 04-15-2010 |
Jong Seob Kim, Daejeonkwangyeok-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20080213510 | Liquid Crystal Aligning Agent and Liquid Crystal Alignment Layer Formed Using the Same - A liquid crystal aligning agent suitable for use in the production of a liquid crystal display device is provided. The liquid crystal aligning agent comprises at least one polymer selected from a polyamic acid and a soluble polyimide, an aprotic polar solvent and monoethylene glycol dimethyl ether or dipropylene glycol dimethyl ether. The liquid crystal aligning agent has satisfactory printability. Further provided is a liquid crystal alignment layer formed using the aligning agent. The liquid crystal alignment layer is highly uniform. | 09-04-2008 |
Jong Seob Kim, Uiwang KR
| Patent application number | Description | Published |
|---|---|---|
| 20110241175 | HARDMASK COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A hardmask composition for forming a resist underlayer film, a process for producing a semiconductor integrated circuit device, and a semiconductor integrated circuit device, the hardmask composition including an organosilane polymer, and a stabilizer, the stabilizer including one of acetic anhydride, methyl acetoacetate, propionic anhydride, ethyl-2-ethylacetoacetate, butyric anhydride, ethyl-2-ethylacetoacetate, valeric anhydride, 2-methylbutyric anhydride, nonanol, decanol, undecanol, dodecanol, propylene glycol propyl ether, propylene glycol ethyl ether, propylene glycol methyl ether, propylene glycol, phenyltrimethoxysilane, diphenylhexamethoxydisiloxane, diphenylhexaethoxydisiloxane, dioctyltetramethyldisiloxane, hexamethyltrisiloxane, tetramethyldisiloxane, decamethyltetrasiloxane, dodecamethylpentasiloxane, hexamethyldisiloxane, and mixtures thereof. | 10-06-2011 |
Jong-Seob Kim, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20090146236 | PHOTOSENSITIVE RESIN COMPOSITION FOR PAD PROTECTIVE LAYER, AND METHOD FOR MAKING IMAGE SENSOR USING THE SAME - The present invention provides a photosensitive resin composition for a pad protective layer that includes (A) an alkali soluble resin, (B) a reactive unsaturated compound, (C) a photoinitiator, and (D) a solvent. The (A) alkali soluble resin includes a copolymer including about 5 to about 50 wt % of a unit having the Chemical Formula 1, about 1 to about 25 wt % of a unit having the Chemical Formula 2, and about 45 to about 90 wt % of a unit having the Chemical Formula 3, and a method of making an image sensor using the photosensitive resin composition. | 06-11-2009 |
| 20100167212 | RESIST UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME - A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the resist underlayer composition including a solvent and an organosilane-based polymer, the organosilane-based polymer being a polymerization product of at least one first compound represented Chemical Formulae 1 to 3 and at least one second compound represented by Chemical Formulae 4 and 5. | 07-01-2010 |
Jong-Seob Kim, Hwaseong-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20110062448 | Field effect semiconductor devices and methods of manufacturing field effect semiconductor devices - Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor layer on a first surface of a first semiconductor layer, a first and a second third semiconductor layer respectively on two sides of the second semiconductor layer, a source and a drain respectively on the first and second third semiconductor layer, and a gate electrode on a second surface of the first semiconductor layer. | 03-17-2011 |
| 20110068370 | Power electronic devices, methods of manufacturing the same, and integrated circuit modules including the same - Power electronic devices including 2-dimensional electron gas (2DEG) channels and methods of manufacturing the same. A power electronic device includes lower and upper material layers for forming a 2DEG channel, and a gate contacting an upper surface of the upper material layer. A region below the gate of the 2DEG channel is an off region where the density of a 2DEG is reduced or zero. The entire upper material layer may be continuous and may have a uniform thickness. A region of the upper material layer under the gate contains an impurity for reducing or eliminating a lattice constant difference between the lower and upper material layers. | 03-24-2011 |
| 20110212582 | Method Of Manufacturing High Electron Mobility Transistor - A method of manufacturing a High Electron Mobility Transistor (HEMT) may include forming first and second material layers having different lattice constants on a substrate, forming a source, a drain, and a gate on the second material layer, and changing the second material layer between the gate and the drain into a different material layer, or changing a thickness of the second material layer, or forming a p-type semiconductor layer on the second material layer. The change in the second material layer may occur in an entire region of the second material layer between the gate and the drain, or only in a partial region of the second material layer adjacent to the gate. The p-type semiconductor layer may be formed on an entire top surface of the second material layer between the gate and the drain, or only on a partial region of the top surface adjacent to the gate. | 09-01-2011 |
| 20110215378 | High electron mobility transistors exhibiting dual depletion and methods of manufacturing the same - High electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same. The HEMT includes a source electrode, a gate electrode and a drain electrode disposed on a plurality of semiconductor layers having different polarities. A dual depletion region exists between the source electrode and the drain electrode. The plurality of semiconductor layers includes an upper material layer, an intermediate material layer and a lower material layer, and a polarity of the intermediate material layer is different from polarities of the upper material layer and the lower material layer. | 09-08-2011 |
| 20110221482 | Semiconductor device - Provided is a semiconductor device that may include a switching device having a negative threshold voltage, and a driving unit between a power terminal and a ground terminal and providing a driving voltage for driving the switching device. The switching device may be connected to a virtual ground node having a virtual ground voltage that is greater than a ground voltage supplied from the ground terminal and may be turned on when a difference between the driving voltage and the virtual ground voltage is greater than the negative threshold voltage. | 09-15-2011 |
Jong-Seob Kim, Yongin-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20080285353 | Flash memory device, method of manufacturing the same, and method of operating the same - Provided are a memory device, a method of manufacturing the same, and a method of operating the same. The memory device may include a channel region having an upper end where both sides of the upper end are curved, the curved portions of both sides allowing charges to be injected thereinto in a program or erase voltage such that the curved portions into which the charges are injected are separate from a portion which determines a threshold voltage, and a gate structure on the channel region. | 11-20-2008 |
| 20090021988 | Nonvolatile memory device and method of operating fabricating the same - Provided is a method of reliably operating a highly integratable nonvolatile memory device. The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line. In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line. | 01-22-2009 |
| 20100302870 | Nonvolatile memory device and method of operating and fabricating the same - Provided is a method of reliably operating a highly integratable nonvolatile memory device. The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line. In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line. | 12-02-2010 |
Jong-Seob Kim, Yuseong-Gu KR
| Patent application number | Description | Published |
|---|---|---|
| 20100021830 | Aromatic ring-containing polymer, polymer mixture, antireflective hardmask composition, and associated methods - An aromatic ring-containing polymer, a polymer mixture, an antireflective hardmask composition, and a method for patterning a material on a substrate, the aromatic ring-containing polymer including at least one aromatic ring-containing polymer represented by Formulae 1, 2, or 3. | 01-28-2010 |
Jong-Seob Kim, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20100271112 | SPIN TRANSISTOR AND METHOD OF OPERATING THE SAME - Disclosed are a spin transistor and a method of operating the spin transistor. The disclosed spin transistor includes a channel formed of a magnetic material selectively passing a spin-polarized electron having a specific direction, a source formed of a magnetic material, a drain, and a gate electrode. When a predetermined voltage is applied to the gate electrode, the channel selectively passes a spin-polarized electron having a specific direction and thus, the spin transistor is selectively turned on. | 10-28-2010 |