| Patent application number | Description | Published |
|---|
| 20080216209 | SAFETY GLOVE - The present invention relates to a safety glove including: an inner shell adapted to be in direct contact with the wearer' hand, the inner shell being made of a general fiber material; an outer shell adapted to be in direct contact with an object or tool, the outer shell being made of a cotton material that is reinforced and coated at the inside thereof; and a plurality of safety elements made of a metal material or a reinforced plastic material and having chevron patterns | 09-11-2008 |
| 20080217685 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes an isolation layer for dividing a silicon substrate into an active region and an inactive region, a gate electrode formed over the silicon substrate, a gate oxide layer formed around a sidewall of the gate electrode to expose an upper portion of the sidewall of the gate electrode, a gate insulation layer formed between the silicon substrate and the gate electrode, an epitaxial layer formed over the gate electrode and the active region around the gate electrode; a lightly doped drain region formed in a surface of the silicon substrate around the gate electrode, a gate spacer formed around the sidewall of the gate electrode including the gate oxide layer; source and drain regions formed in the surface of the silicon substrate at sides of the gate spacer, and a protective layer formed over the entire surface of the silicon substrate. | 09-11-2008 |
| 20080315306 | Semiconductor Device and Method of Fabricating the Semiconductor Device - A semiconductor device comprises a gate electrode on a semiconductor substrate, drift regions at opposite sides of the gate electrode, source and drain regions in the respective drift regions, and shallow trench isolation (STI) regions in the respective drift regions between the gate electrode and the source or drain region, wherein the drift regions comprise first and second conductivity-type impurities. | 12-25-2008 |
| 20090001459 | High power semiconductor device capable of preventing parasitical bipolar transistor from turning on - A high power semiconductor device capable of preventing parasitical bipolar transistor from turning on comprises a first conduction type drain region, a first conduction type epitaxial region formed on the first conduction type drain region, a plurality of second conduction type body regions formed on the surface of the epitaxial region, at least a first conduction type source region formed on the surface of the body regions, a source electrode contact region formed on the surface of the body regions and overlapping the source region and having at least one end longer than one end of the source region, and a plurality of gate electrodes staggered with the source electrode contact region and formed on the body regions and the epitaxial region. | 01-01-2009 |
| 20100068502 | EASY PEEL-OFF COATING COMPOSITION FOR ANTI-RUST COATING - Disclosed is a coating composition comprising: a styrene block copolymer, a filler having a core-shell structure, silica, and a solvent. The above core-shell structured filler can improve peel-off property of a film made of styrene block copolymer based coating composition. | 03-18-2010 |
| 20100091154 | Image Sensor and Method For Manufacturing the Same - An image sensor is provided. The image sensor comprises a readout circuitry, an interconnection, an image sensing device and a via plug. The readout circuitry is disposed in a first substrate. The interconnection is disposed over the first substrate and electrically connected to the readout circuitry. The image sensing device is disposed over the interconnection. The via plug is formed at a pixel boundary and electrically connects the image sensing device and the interconnection. | 04-15-2010 |
| 20100091155 | Image Sensor and Method for Manufacturing the Same - An image sensor is provided. The image sensor comprises a readout circuitry, an interconnection, an insulating layer, an electrode, and an image sensing device. The readout circuitry is disposed in a first substrate. The interconnection is disposed over the first substrate and electrically connected to the readout circuitry. The insulating layer is disposed over the interconnection. The electrode is disposed on the insulating layer. The image sensing device is disposed on the electrode. The electrode and the interconnection provide a capacitive coupling of the image sensing device to the readout circuitry so that a contact formation process to contact the photodiode to the interconnection can be omitted. | 04-15-2010 |
| 20100109083 | Semiconductor Device and Method for Manufacturing the Same - Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes at least two of first and second conductive-type high-voltage transistors and first and second conductive-type low-voltage transistors. The first conductive-type high-voltage transistor include a first conductive-type well in a semiconductor substrate, a device isolation film in the first conductive-type well, a gate pattern on the first conductive-type well, second conductive-type drift regions in the semiconductor substrate at opposite sides of the gate pattern, second conductive-type source and drain regions in the second conductive-type drift region, a pick-up region to receive a bias voltage, and a first latch-up inhibiting region under the pick-up region. Accordingly, it is possible to reduce and prevent latchup without using a double guard ring and to eliminate an additional process to form first and second latch-up inhibiting regions. | 05-06-2010 |
| 20100155841 | Semiconductor Device and Method for Fabricating the Same - A Semiconductor device and method for fabricating the same are disclosed. The method includes implanting first conduction type impurities into a semiconductor substrate to form a first well, implanting second conduction type impurities into the first well to form a second well, implanting second conduction type impurities into the second well to form an impurity region, forming a gate on the semiconductor substrate, and implanting second conduction type impurities to form a drain region in the impurity region on one side of the gate. | 06-24-2010 |
| 20100158588 | FUSING UNIT AND IMAGE FORMING APPARATUS HAVING THE SAME - A fusing unit and an image forming apparatus having the same. The fusing unit may include a heating roller, a fusing frame to which the heating roller may be mounted, a pivoting frame to mount to the fusing frame to be rotatable about the heating roller, and a plurality of pressure rollers to mount to the pivoting frame and to be elastically supported on an outer peripheral surface of the heating roller. When paper that undergoes serious curling beyond an appropriate level is used, the pressure rollers may rotate to allow paper having passed between the heating roller and the pressure rollers to move in a path rotated by an angle corresponding to a rotation angle of the pressure rollers. This exemplary embodiment may reduce paper jam. | 06-24-2010 |
| 20100164049 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Provided are an image sensor and a method for manufacturing the same. The image sensor comprises an active region including a photodiode region, a transistor region, and an active pattern; a photodiode; and a plurality of transistors. The active region is formed on a substrate. The active region is defined by a device isolation region. The photodiode region and the transistor region are formed in the active region. The photodiode is formed in the photodiode region. The plurality of transistors is formed on the transistor region. The active pattern connects the photodiode region to the transistor region at a second location. | 07-01-2010 |
| 20110061608 | DEVICE FOR SUPPLYING WARM WATER AND METHOD THEREOF - Provided is a device for supplying warm water and a method thereof. The device for supplying warm water includes a first heater configured to have a first set capacity and heating received water, a second heater configured to have a second set capacity greater than the first set capacity and heating received water, and a control part calculating heater driving cycles of the first heater and the second heater according to a set water temperature, and driving the first heater and the second heater according to the heater driving cycles. The control part calculates the heater driving cycle of the first heater by using a phase control method, and calculates the heater driving cycle of the second heater by using a zero-crossing control method. | 03-17-2011 |
