Patent application number | Description | Published |
20080230765 | LIGHT EMITTING DIODE - AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and the respective light emitting cells are arranged so that the upper electrode pad and the lower electrode of one of the light emitting cells are symmetric with respect to those of adjacent another of the light emitting cells. | 09-25-2008 |
20100006867 | LIGHT EMITTING DIODE HAVING LIGHT EMITTING CELL WITH DIFFERENT SIZE AND LIGHT EMITTING DEVICE THEREOF - There is provided a light emitting diode operating under AC power comprising a substrate; a buffer layer formed on the substrate; and a plurality of light emitting cells formed on the buffer layer to have different sizes and to be electrically isolated from one another, the plurality of light emitting cells being connected in series through metal wires. | 01-14-2010 |
20100041173 | METHOD OF FABRICATING LIGHT EMITING DIODE CHIP - The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method comprises the steps of preparing a substrate; laminating the semiconductor layers on the substrate, the semiconductor layers having the active layer between the N type semiconductor layer and the P type semiconductor layer; and forming grooves on the semiconductor layers laminated on the substrate until the substrate is exposed, whereby inclined sidewalls are formed by the grooves in the semiconductor layers divided into a plurality of chips. According to embodiments of the present invention, a sidewall of a semiconductor layer formed on a substrate of a light emitting diode chip is inclined with respect to the substrate, whereby its directional angle is widened as compared with a light emitting diode chip without such inclination. As the directional angle of the light emitting diode chip is wider, when a white light emitting device is fabricated using the light emitting diode chip and a phosphor, light uniformity can be adjusted even though the phosphor is not concentrated at the center of the device. Thus, the overall light emitting efficiency can be enhanced by reducing a light blocking phenomenon caused by the increased amount of the phosphor distributed at the center portion. | 02-18-2010 |
20100072494 | LIGHT EMITTING DIODE HAVING LIGHT EMITTING CELL WITH DIFFERENT SIZE AND LIGHT EMITTING DEVICE THEREOF - There is provided a light emitting diode operating under AC power comprising a substrate; a buffer layer formed on the substrate; and a plurality of light emitting cells formed on the buffer layer to have different sizes and to be electrically isolated from one another, the plurality of light emitting cells being connected in series through metal wires. | 03-25-2010 |
20100078656 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside. | 04-01-2010 |
20110062459 | AC LIGHT EMITTING DIODE HAVING FULL-WAVE LIGHT EMITTING CELL AND HALF-WAVE LIGHT EMITTING CELL - The present invention discloses an alternating current (AC) light emitting diode (LED) having half-wave light emitting cells and full-wave light emitting cells. The AC LED has a plurality of light emitting cells electrically connected between bonding pads on a single substrate. The AC LED includes a first row of half-wave light emitting cells each having an anode terminal and a cathode terminal, a second row of full-wave light emitting cells each having an anode terminal and a cathode terminal, and a third row of half-wave light emitting cells each having an anode terminal and a cathode terminal. In the AC LED, the second row is arranged between the first row and the third row, and the third row includes a pair of light emitting cells that share a cathode terminal with each other. The cathode terminal shared by the pair of light emitting cells in the third row is electrically connected to the anode terminal of a corresponding light emitting cell of the half-wave light emitting cells in the first row through a conductor that is electrically insulated from the full-wave light emitting cells in the second row. | 03-17-2011 |
20110114969 | LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR, METHOD OF FABRICATING THE SAME, AND LIGHT EMITTING DIODE PACKAGE HAVING DISTRIBUTED BRAGG REFLECTOR - An exemplary embodiment of the present invention discloses a light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. | 05-19-2011 |
20110127549 | LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. | 06-02-2011 |
20110169040 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside. | 07-14-2011 |
20110195538 | METHOD OF FABRICATING LIGHT EMITING DIODE CHIP - The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method comprises the steps of preparing a substrate; laminating the semiconductor layers on the substrate, the semiconductor layers having the active layer between the N type semiconductor layer and the P type semiconductor layer; and forming grooves on the semiconductor layers laminated on the substrate until the substrate is exposed, whereby inclined sidewalls are formed by the grooves in the semiconductor layers divided into a plurality of chips. According to embodiments of the present invention, a sidewall of a semiconductor layer formed on a substrate of a light emitting diode chip is inclined with respect to the substrate, whereby its directional angle is widened as compared with a light emitting diode chip without such inclination. As the directional angle of the light emitting diode chip is wider, when a white light emitting device is fabricated using the light emitting diode chip and a phosphor, light uniformity can be adjusted even though the phosphor is not concentrated at the center of the device. Thus, the overall light emitting efficiency can be enhanced by reducing a light blocking phenomenon caused by the increased amount of the phosphor distributed at the center portion. | 08-11-2011 |
20110215346 | LIGHT EMITTING DIODE - AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and the respective light emitting cells are arranged so that the upper electrode pad and the lower electrode of one of the light emitting cells are symmetric with respect to those of adjacent another of the light emitting cells. | 09-08-2011 |
20120007109 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside. | 01-12-2012 |
20120080695 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors. | 04-05-2012 |
20120161176 | LIGHT EMITTING DIODE CHIP AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention provide light emitting diode (LED) chips and a method of fabricating the same. An LED chip according to an exemplary embodiment includes a substrate; a light emitting structure arranged on the substrate, and an alternating lamination bottom structure arranged under the substrate. The alternating lamination bottom structure includes a plurality of dielectric pairs, each of the dielectric pairs including a first material layer having a first refractive index and a second material layer having a second refractive index, the first refractive index being greater than the second refractive index. | 06-28-2012 |
20120187424 | LIGHT EMITTING DIODE - Exemplary embodiments of the present invention relate to light emitting diodes including a plurality of light emitting cells on a substrate to be suitable for AC driving. The light emitting diode includes a substrate and a plurality of light emitting cell formed on the substrate. Each light emitting cell includes a first region at a boundary of the light emitting cell and a second region opposite to the first region. A first electrode pad is formed in the first region of the light emitting cell. A second electrode pad having a linear shape is disposed to face the first electrode pad while regionally defining a peripheral region together with the boundary of the second region. A wire connects the first electrode pad to the second electrode pad between two adjacent light emitting cells. | 07-26-2012 |
20130140588 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors. | 06-06-2013 |
20140087502 | LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. | 03-27-2014 |
20140091338 | LIGHT EMITTING DIODE - Exemplary embodiments of the present invention relate to light emitting diodes including a plurality of light emitting cells on a substrate to be suitable for AC driving. The light emitting diode includes a substrate and a plurality of light emitting cell formed on the substrate. Each light emitting cell includes a first region at a boundary of the light emitting cell and a second region opposite to the first region. A first electrode pad is formed in the first region of the light emitting cell. A second electrode pad having a linear shape is disposed to face the first electrode pad while regionally defining a peripheral region together with the boundary of the second region. A wire connects the first electrode pad to the second electrode pad between two adjacent light emitting cells. | 04-03-2014 |
20140110729 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside. | 04-24-2014 |
20140145218 | LIGHT EMITTING DIODE HAVING A PLURALITY OF LIGHT EMITTING UNITS - Exemplary embodiments of the present invention provide a light emitting diode including light emitting units disposed on a substrate, and wires connecting the light emitting units to each other, wherein the light emitting units each include a parallelogram-shaped light emitting unit having two acute angles and two obtuse angles, or a triangular light emitting unit having three acute angles. | 05-29-2014 |
20140175465 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention provide a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate and spaced apart from each other, a first transparent electrode layer disposed on the first light emitting cell and electrically connected to the first light emitting cell, a current blocking layer disposed between a portion of the first light emitting cell and the first transparent electrode layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and the insulation layer are connected to each other. | 06-26-2014 |
20150076532 | LIGHT EMITTING DIODE - AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and the respective light emitting cells are arranged so that the upper electrode pad and the lower electrode of one of the light emitting cells are symmetric with is respect to those of adjacent another of the light emitting cells. | 03-19-2015 |
Patent application number | Description | Published |
20080316751 | Reflector shapes for light emitting diode-polarized light sources - A light-emitting device including a light source that exhibits polarization anisotropy and a reflector that is shaped so that for light emitted in at least two directions from the light source, the angle between the dominant polarization directions after reflecting from the reflector is smaller than the angle between the dominant polarization directions before reflecting from the reflector. In the light-emitting device the light source may be a light-emitting diode chip or one of a plurality of light sources. | 12-25-2008 |
20090050874 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked, and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has greater bandgap energy than a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers, and has a net polarization equal to or smaller than that of the quantum barrier layer adjacent thereto. The nitride semiconductor light emitting device can achieve high efficiency in every current region by minimizing a net polarization mismatch between a quantum barrier layer and an electron blocking layer. | 02-26-2009 |
20090050875 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer. | 02-26-2009 |
20090080217 | Encapsulant shapes for light emitting devices lacking rotational symmetry designed to enhance extraction of light with a particular linear polarization - The light-emitting device includes a light source and a transparent encapsulating material that is shaped to modify the polarization anisotropy of light emitted by the light source in at least one direction. | 03-26-2009 |
20100148199 | Light emitting device with fine pattern - A semiconductor light emitting device includes a semiconductor light emitting structure including first and second conductivity type semiconductor layers, and an active layer disposed therebetween, first and second electrodes connected to the first and second conductivity type semiconductor layers, respectively, and a fine pattern for light extraction, formed on a light emitting surface from which light generated from the active layer is emitted. The fine pattern for light extraction is formed as a graded refractive index layer having a refractive index which decreases with vertical distance from the light emitting surface. | 06-17-2010 |
20110001123 | Nitride semiconductor light emitting device - A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer. | 01-06-2011 |
20110120554 | ULTRA-LOW REFLECTANCE BROADBAND OMNI-DIRECTIONAL ANTI-REFLECTION COATING - An anti-reflection coating has an average total reflectance of less than 10%, for example less than 5.9% such as from 4.9% to 5.9%, over a spectrum of wavelengths of 400-1100 nm and a range of angles of incidence of 0-90 degrees with respect to a surface normal of the anti-reflection coating. An anti-reflection coating has a total reflectance of less than 10%, for example less than 6% such as less than 4%, over an entire spectrum of wavelengths of 400-1600 nm and an entire range of angles of incidence of 0-70 degrees with respect to a surface normal of the anti-reflection coating. | 05-26-2011 |
Patent application number | Description | Published |
20080237613 | Ac Light Emitting Device Having Photonic Crystal Structure and Method of Fabricating the Same - Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided. | 10-02-2008 |
20090184391 | Semiconductor devices having fuses and methods of forming the same - Semiconductor devices having a plurality of fuses and methods of forming the same are provided. The semiconductor device having a fuse including a substrate having a cell region and/or a fuse box region. A first insulation interlayer may be formed on the substrate. A first etch stop layer may be formed on the first insulation interlayer. A metal wiring including a barrier layer, a metal layer and/or a capping layer may be formed on the first etch stop layer of the cell region. Fuses, spaced apart from each other, may be formed on the first etch stop layer of the fuse box region. Each fuse may include the barrier layer and/or the metal layer. A second insulation interlayer having an opening exposing the fuse box region may be formed on the metal wiring and/or the first etch stop layer. The etch stop layer may allow the fuses to be formed more uniformly and decrease the probability of breaking the fuses. | 07-23-2009 |
20090311816 | AC LIGHT EMITTING DEVICE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME - Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided. | 12-17-2009 |
20110185276 | TEXT OUTPUT METHOD AND APPARATUS - A text output method and apparatus are provided. The text output method includes outputting characters in horizontal lines on a screen, and the outputting the characters includes outputting the characters by performing line breaking in a lower-to-upper direction. | 07-28-2011 |
20130223539 | METHOD FOR TRANSMITTING STREAM BETWEEN ELECTRONIC DEVICES AND ELECTRONIC DEVICE FOR THE METHOD THEREOF - A technique for transmitting a video stream between a first electronic device and a second electronic device is provided. The first device receives an encoded video stream and determines whether an encoding format of the encoded video stream is a format decodable by a second electronic device. If the format is decodable, the encoded video stream is transmitted without a re-encoding operation to the second device. The video stream is displayed at the first device delayed by a determined delay time enabling the video stream to be displayed at the second device substantially synchronized with the display at the first device. | 08-29-2013 |
20140064695 | APPARATUS AND METHOD FOR CONTROLLING A VIDEO - A system for controlling a video is provided. The system includes a terminal which transmits a flush command to an external device to delete buffered data in a buffer of the external device when a search command for moving to a location of specific data of a video is generated while data of the video is streamed to the external device and which then transmits to the external device the specific data located in relation to the search command, and an external device which deletes the buffered data in the buffer when the flush command is received from the terminal while a video streamed from the terminal is reproduced and which buffers the specific data of the video received from the terminal in the buffer to be output. | 03-06-2014 |
Patent application number | Description | Published |
20090093211 | DEVICE FOR PREVENTING EAVESDROPPING THROUGH SPEAKER - Provided is a device for preventing eavesdropping through a speaker. More particularly, a device for preventing eavesdropping by transmitting a jamming signal through a speaker common signal line is provided, the device including: a jamming signal generator for generating a jamming signal comprising a noise signal; an amplifier for amplifying the jamming signal; and a transformer for receiving the amplified jamming signal from the amplifier and outputting the amplified jamming signal to a speaker common signal line. The device may transmit a jamming signal in an audible frequency band to the speaker common signal line, thereby rendering conversations unrecognizable to eavesdroppers when an electrical signal induced from a speaker is detected through the speaker common signal line. | 04-09-2009 |
20120182635 | LIGHT-COLLECTING HELIOSTAT USING FLAT MIRRORS - Disclosed is a light-collecting heliostat using flat mirrors of enhanced light-collecting efficiency. The gradients of low-price flat mirrors are adjusted when reflecting sunlight by the heliostat equipped with the flat mirrors, thereby causing reflection focal points having the same size as each of the mirrors to overlap, in the same number as the number of the reflective plates constituting the heliostat, on a heat collecting unit of collecting lights, so that a high temperature light-collecting focal point with a uniform temperature distribution is obtained. | 07-19-2012 |
20130175082 | VENT STRUCTURE FOR ELECTROMAGNETIC SHIELDING - A vent structure for electromagnetic shielding includes: a conductive shielding case having a vent formed therein: a conductive shielding duct installed on the shielding case so as to cover the vent, including a space formed perpendicular to the direction of motion of air discharged from the vent to vent the air and a discharge port connected from the space to the outside to discharge the air introduced into the space to the outside, and shielding electromagnetic waves; and an EMI (Electro Magnetic Interference) gasket installed at a bonding surface between the shielding case and the shielding duct, and electrically connecting the shielding case and the shielding duct. | 07-11-2013 |
20130316638 | WIDEBAND INTELLIGENT JAMMING CONTROL APPARATUS AND METHOD - A wideband intelligent jamming control apparatus and method is provided, which efficiently control an unauthorized threat signal. The wideband intelligent jamming control apparatus includes a signal detection terminal for detecting and analyzing wideband frequency signals in real time, and transmitting a jamming command and jamming signal specification information if a corresponding wideband frequency signal is determined to be an unauthorized threat signal. A jamming terminal receives the jamming command and the jamming signal specification information, and generates and emits a jamming signal based on the jamming command and the jamming signal specification information. The signal detection terminal and the jamming terminal may be configured to be physically separated from each other and may be controlled on a network. | 11-28-2013 |
20140152505 | APPARATUS AND METHOD FOR ESTIMATING DIRECTION OF RADIO FREQUENCY SIGNAL - An apparatus and method for estimating the direction of an RF signal is provided. The apparatus includes an antenna for receiving an RF signal. An electronic compass is configured to, as a pointing direction of the antenna is varied, generate information about pointing directions and pointing angles corresponding to variations in the pointing direction of the antenna. A control unit determines RSSI values at respective, pointing angles of the antenna based on a received signal of the antenna and information of the electronic compass depending on the variations, extracts a maximum RSSI value from the RSSI values at respective pointing angles, and stores the maximum RSSI value and a pointing direction corresponding to the maximum RSSI value. A display unit displays the RSSI values at the respective pointing angles and a trajectory of the RSSI values at respective pointing angles under control of the control unit. | 06-05-2014 |