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Jong-Kwan
Jong-Kwan Choi, Suwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20110085054 | APPARATUS AND METHOD OF REDUCING POWER CONSUMPTION IN DIGITAL IMAGE PROCESSOR - An apparatus and method for reducing power consumption in a digital image processor are disclosed. The apparatus includes a global positioning system (GPS) module using power and configured to generate initial GPS location information of the digital image processor; and a digital signal processor (DSP) configured to receive the initial GPS location information, to set user selected location information for recording in a captured image, and to cut the power to the GPS module. The method includes supplying power to a global positioning system (GPS) module; receiving initial GPS location information of the digital image processor, wherein the initial GPS location is generated by the GPS module; setting a user selected location information to capture an image; and cutting the power to the GPS module. | 04-14-2011 |
Jong-Kwan Lee, Kimpo-City KR
| Patent application number | Description | Published |
|---|---|---|
| 20100132109 | BATHTUB WITH CUSHION AND PREPARATION METHOD THEREOF - The present invention relates to a bathtub with cushion and a preparation method thereof which comprises an external structure layer which forms an external appearance of the bathtub; a foaming layer which is formed on the external structure layer; and a elastic protecting layer which is selected from groups of a rapid-hardening polyurea resin hardened layer, a polyurethane-urea resin hardened layer and an unfoaming painted layer, on the foaming layer. | 06-03-2010 |
Jong-Kwan Park, Gongju-City KR
| Patent application number | Description | Published |
|---|---|---|
| 20110045741 | Auto-Stopping Abrasive Composition for Polishing High Step Height Oxide Layer - Disclosed is a chemical-mechanical polishing composition used in a process for chemical-mechanical polishing of silicon oxide layer having severe unevenness with large step-height. The composition includes abrasive particles of metal oxide; and at least one compound(s) selected from the group consisting of amino alcohols, hydroxycarboxylic acid having at least 3 of the total number of carboxylic acid group(s) and hydroxyl group(s) or their salts, or a mixture thereof. A polymeric organic acid, a preservative, a lubricant and a surfactant may be further contained. The composition shortens the vapor-deposition time of a layer to be polished, saves the raw material to be vapor-deposited, shortens the chemical-mechanical polishing time, and saves the slurry employed. | 02-24-2011 |
Jong-Kwan Park, Gongju-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20110124195 | Chemical Mechanical Polishing Composition Containing Polysilicon Polish Finisher - Provided are a chemical mechanical polishing (CMP) composition used for polishing a semiconductor device which contains polysilicon film and insulator, and a chemical mechanical polishing method thereof. The CMP composition is especially useful in a isolation CMP process for semiconductor devices. Provided is a highly selective CMP composition containing a polysilicon polish finisher which can selectively polish semiconductor insulators since it uses a polysilicon film as a polish finishing film. | 05-26-2011 |
Jong-Kwan Park, Daegu KR
| Patent application number | Description | Published |
|---|---|---|
| 20110284792 | STEEL-BASE SINTERING ALLOY HAVING HIGH WEAR-RESISTANCE FOR VALVE SEAT OF ENGINE AND MANUFACTURING METHOD THEREOF, AND VALVE SEAT OF ENGINE - The present invention features a steel-base sintering alloy having a high wear-resistance for a valve seat of an engine. In preferred embodiments, the steel-base sintering alloy may include a chief element of Ferrum (Fe); and a powder-alloy which are composed of Carbon (C) of 0.6˜1.2 wt %, Nickel (Ni) of 1.0˜3.0 wt %, Cobalt (Co) of 15.0˜25.0 wt %, Chrome (Cr) of 3.0˜9.0 wt %, Molybdenum (Mo) of 8.0˜15.0 wt %, Tungsten (W) of 1.0˜4.0 wt %, Manganese (Mn) of 0.5˜2.0 wt %, and Calcium (Ca) of 0.1˜0.5 wt %. | 11-24-2011 |