| Patent application number | Description | Published |
|---|
| 20080224133 | Thin film transistor and organic light-emitting display device having the thin film transistor - Disclosed is a thin film transistor including a P-type semiconductor layer, and an organic light-emitting display device having the thin film transistor. The present invention provides a thin film transistor including a substrate, a semiconductor layer, and a gate electrode and a source/drain electrode formed on the substrate, wherein the semiconductor layer is composed of P-type ZnO:N layers through a reaction of a mono-nitrogen gas with a zinc precursor, and the ZnO:N layer includes an un-reacted impurity element at a content of 3 at % or less. | 09-18-2008 |
| 20080303020 | Thin film transistor, flat panel display device having the same, and associated methods - A thin film transistor includes a gate electrode, a first insulating layer on the gate electrode, a semiconductor layer on the gate electrode and separated from the gate electrode by the first insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, a source region, and a drain region, a hydrogen diffusion barrier layer on the semiconductor layer, the hydrogen diffusion barrier layer covering the channel region and exposing the source and drain regions, and a second insulation layer on the source and drain regions and on the hydrogen diffusion barrier layer, such that the hydrogen diffusion barrier layer is between the second insulation layer and the channel region. | 12-11-2008 |
| 20090020753 | Method of manufacturing semiconductor active layer, method of manufacturing thin film transistor using the same and thin film transistor having semiconductor active layer - A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %. | 01-22-2009 |
| 20090057674 | Thin film transistor, light-emitting display device having the same and associated methods - A thin film transistor (TFT) includes an N-type oxide semiconductor layer on a substrate, a gate electrode spaced apart from the N-type oxide semiconductor layer by a gate dielectric layer, a source electrode contacting a first portion of the N-type oxide semiconductor layer, and a drain electrode contacting a second portion of the N-type oxide semiconductor layer. The first and second portions each have a doped region containing ions of at least one Group 1 element, and the ions of the at least one Group 1 element in the doped region may have a work function that is less than that of an N-type oxide semiconductor material included in the semiconductor layer. | 03-05-2009 |
| 20090155940 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY HAVING THIN FILM TRANSISTOR - A method of manufacturing a thin film transistor having a compound semiconductor with oxygen as a semiconductor layer and a method of manufacturing an organic light emitting display having the thin film transistor include: forming a gate electrode on an insulating substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer including oxygen ions on the gate insulating layer, and including a channel region, a source region, and a drain region; forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and forming a passivation layer on the semiconductor layer by coating an organic material, wherein a carrier density of the semiconductor layer is maintained in the range of 1E+17 to 1E+18/cm | 06-18-2009 |
| 20090159879 | Thin film transistor, method of fabricating a thin film transistor and flat panel display device having the same - A TFT includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a surface roughness of about 1.3 nm or less, a gate electrode on the transparent semiconductor layer, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer. | 06-25-2009 |
| 20090194766 | Thin film transistor, method of manufacturing the same, and flat panel display device having the same - A thin film transistor (TFT) using an oxide semiconductor layer as an active layer, a method of manufacturing the TFT, and a flat panel display (FPD) including the TFT are taught. The TFT includes a gate electrode formed on a substrate, an oxide semiconductor layer electrically insulated from the gate electrode by a gate insulating layer, and the oxide semiconductor layer including a channel region, a source region, and a drain region, and a source electrode and a drain electrode respectively electrically contacting the source region and the drain region. The oxide semiconductor layer is formed of an InZnO or IZO layer (indium zinc oxide layer) including Zr. The carrier density of the IZO layer is controlled to be 1×10 | 08-06-2009 |
| 20090294772 | Thin film transistor, method of manufacturing the same and flat panel display device having the same - A thin film transistor is provided having an oxide semiconductor as an active layer, a method of manufacturing the thin film transistor and a flat panel display device having the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; an oxide semiconductor layer isolated from the gate electrode by a gate insulating layer and including channel, source and drain regions; source and drain electrodes coupled to the source and drain regions, respectively; and an ohmic contact layer interposed between the source and drain regions and the source and drain electrodes. In the TFT, the ohmic contact layer is formed with the oxide semiconductor layer having a carrier concentration higher than those of the source and drain regions. | 12-03-2009 |
| 20090321731 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME - A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented. | 12-31-2009 |
| 20100006833 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME - A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer. | 01-14-2010 |
| 20100026169 | Thin film transistor, method of manufacturing the same and flat panel display device having the same - Disclosed is a thin film transistor which has an oxide semiconductor as an activation layer, a method of manufacturing the same and a flat panel display device having the same. The thin film transistor includes an oxide semiconductor layer formed on a substrate and including a channel region, a source region and a drain region, a gate electrode insulated from the oxide semiconductor layer by a gate insulating film, and source electrode and drain electrode which are coupled to the source region and the drain region, respectively. The oxide semiconductor layer includes a first layer portion and a second layer portion. The first layer portion has a first thickness and a first carrier concentration, and the second layer portion has a second thickness and a second carrier concentration. The second carrier concentration is lower than the first carrier concentration. | 02-04-2010 |
| 20100044699 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - A thin film transistor (TFT) including a gate electrode, an active layer, and source and drain electrodes. The active layer includes contact regions that contact the source and drain electrodes, which are thinner than a remaining region of the active layer. The contact regions reduce the contact resistance between the active material layer and the source and drain electrodes. | 02-25-2010 |
