| Patent application number | Description | Published |
|---|
| 20080258271 | Multi-dielectric films for semiconductor devices and methods of fabricating multi-dielectric films - A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials. | 10-23-2008 |
| 20090085160 | Semiconductor Device Including Insulating Layer of Cubic System or Tetragonal System - Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode. | 04-02-2009 |
| 20090195962 | MULTILAYER ELECTRODE STRUCTURES INCLUDING CAPACITOR STRUCTURES HAVING ALUMINUM OXIDE DIFFUSION BARRIERS - A multilayer electrode structure has a conductive layer including aluminum, an oxide layer formed on the conductive layer, and an oxygen diffusion barrier layer. The oxide layer includes zirconium oxide and/or titanium oxide. The oxygen diffusion barrier layer is formed at an interface between the conductive layer and the oxide layer by re-oxidizing the oxide layer. The oxygen diffusion barrier layer includes aluminum oxide. | 08-06-2009 |
| 20090309187 | Semiconductor Device and Method of Fabricating the Same - Provided is a semiconductor device including a multi-layer dielectric structure and a method of fabricating the semiconductor device. According to one example embodiment, the semiconductor device includes a capacitor comprising: first and second electrodes facing each other; at least one first dielectric layer that is disposed between the first and second electrodes, the at least one first dielectric layer comprising a first high-k dielectric layer doped with silicon; and at least one second dielectric layer that is disposed between the at least one first dielectric layer and any of the first and second electrodes, the at least one second dielectric layer having a higher crystallization temperature than that of the first dielectric layer. | 12-17-2009 |
| 20100167554 | METHODS FORMING HIGH DIELECTRIC TARGET LAYER - In a method of forming a target layer having a uniform composition of constituent materials, a first precursor including a first central atom and a ligand is chemisorbed on a first reaction site of an object. The ligand or the first central atom is then removed to form a second reaction site. A second precursor including a second central atom is then chemisorbed on the second reaction site. | 07-01-2010 |
| 20100190320 | METHODS OF REMOVING WATER FROM SEMICONDUCTOR SUBSTRATES AND METHODS OF DEPOSITING ATOMIC LAYERS USING THE SAME - Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate. | 07-29-2010 |
| 20110014770 | Methods of forming a dielectric thin film of a semiconductor device and methods of manufacturing a capacitor having the same - A method of forming a dielectric thin film of a semiconductor device, the method including supplying a first nuclear atom precursor source and a second nuclear atom precursor source having different thermal decomposition temperatures to a substrate and forming a chemical adsorption layer including first nuclear atoms and second nuclear atoms on the substrate. A reactant including oxygen atoms may be supplied to the substrate on which the chemical adsorption layer is formed. An atomic layer including an oxide of the first nuclear atoms and the second nuclear atoms may be formed on the chemical adsorption layer. | 01-20-2011 |
| 20110073832 | PHASE-CHANGE MEMORY DEVICE - A phase-change memory device, including a lower electrode, a phase-change material pattern electrically connected to the lower electrode, and an upper electrode electrically connected to the phase-change material pattern. The lower electrode may include a first structure including a metal semiconductor compound, a second structure on the first structure, the second structure including a metal nitride material, and including a lower part having a greater width than an upper part, and a third structure including a metal nitride material containing an element X, the third structure being on the second structure, the element X including at least one selected from the group of silicon, boron, aluminum, oxygen, and carbon. | 03-31-2011 |
| 20110104907 | METHODS OF FORMING A METAL SILICATE LAYER AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE INCLUDING THE METAL SILICATE LAYER - Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer are provided, the methods of forming the metal silicate layer include forming the metal silicate using a plurality of silicon precursors. The silicon precursors are homoleptic silicon precursors in which ligands bound to silicon have the same molecular structure. | 05-05-2011 |
