Patent application number | Description | Published |
20080219547 | METHOD OF ANALYZING A WAFER SAMPLE - In a method of analyzing a wafer sample, a first defect of a photoresist pattern on the wafer sample having shot regions exposed with related exposure conditions is detected. A first portion of the pattern includes the shot regions exposed with an exposure condition corresponding to a reference exposure condition and a tolerance error range of the reference exposure condition. The first defect repeatedly existing in at least two of the shot regions in a second portion of the pattern is set up as a second defect of the pattern. A first reference image displaying the second defect is obtained. The first defect of the shot regions in the first portion corresponding to the second defect is set up as a third defect corresponding to weak points of the pattern. The exposure conditions of the shot region having no weak points are set up as an exposure margin of an exposure process. | 09-11-2008 |
20080229099 | METHOD FOR GENERATING STANDARD FILE BASED ON STEGANOGRAPHY TECHNOLOGY AND APPARATUS AND METHOD FOR VALIDATING INTEGRITY OF METADATA IN THE STANDARD FILE - An apparatus for validating integrity of metadata in a standard file includes: a metadata acquiring unit for acquiring metadata from a protected file; an integrity evidence value acquiring unit for acquiring an integrity evidence value from a file or a database; a secret information extracting unit for extracting secret information of a file data; and a metadata integrity validating unit for checking if the metadata is correct by using the acquired metadata, the acquired integrity evidence value, and the extracted secret information. | 09-18-2008 |
20100136717 | APPARATUS AND METHOD TO INSPECT DEFECT OF SEMICONDUCTOR DEVICE - An apparatus and method to inspect a defect of a semiconductor device. The amount of secondary electrons generated due to a scanning electron microscope (SEM) may depend on the topology of a pattern of a semiconductor substrate. The amount of secondary electrons emitted from a recess of an under layer is far smaller than that of secondary electrons emitted from a projection of a top layer. Since the recess is darker than the projection, a ratio of a value of a secondary electron signal of the under layer to a value of a secondary electron signal of the top layer may be increased in order to improve a pattern image used to inspect a defect in the under layer. To do this, a plurality of conditions under which electron beams (e-beams) are irradiated may be set, at least two may be selected out of the set conditions, and the pattern may be scanned under the selected conditions. Thus, secondary electron signals may be generated according to the respective conditions and converted into image data so that various pattern images may be displayed on a monitor. Scan information on the pattern images may be automatically stored in a computer storage along with positional information on a predetermined portion of the semiconductor substrate. When calculation conditions are input to a computer, each of scan information on the pattern images may be calculated to generate a new integrated pattern image. | 06-03-2010 |
20120080597 | APPARATUS AND METHOD TO INSPECT DEFECT OF SEMICONDUCTOR DEVICE - An apparatus and method to inspect a defect of a substrate. Since a recess of an under layer of a substrate is darker than a projection of a top layer, a ratio of a value of a secondary electron signal (of an SEM) of the under layer to a value of the top layer may be increased to improve a pattern image used to inspect an under layer defect. Several conditions under which electron beams are irradiated may be set, and the pattern may be scanned under such conditions. Secondary electron signals may be generated according to the conditions and converted into image data to display various pattern images. Scan information on the images may be stored with positional information on the substrate. Each of scan information on the pattern images may be calculated to generate a new integrated image. | 04-05-2012 |