Patent application number | Description | Published |
20090242260 | DEVICE INTERCONNECTS - A method of fabricating a device structure, comprises: forming an insulating layer ( | 10-01-2009 |
20090242912 | MULTIFUNCTIONAL TAPE - A method comprises forming elongate structures ( | 10-01-2009 |
20100052016 | SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE OF SAME - A method of manufacturing a nitride semiconductor structure includes disposing a semiconductor substrate in a molecular beam epitaxy reactor; growing a wetting layer comprising Al | 03-04-2010 |
20100182294 | SOLID STATE ILLUMINATION SYSTEM - An illumination system comprises at least two light sources ( | 07-22-2010 |
20100265976 | SEMICONDUCTOR LAYER STRUCTURE - A III-nitride compound device which has a layer of AlInN ( | 10-21-2010 |
20110139209 | METHOD OF GROWING A THIN FILM, A METHOD OF FORMING A STRUCTURE AND A DEVICE - A method of growing a thin film comprises growing a thin film by conformally forming at least one layer over a substrate having structures extending from a surface of the substrate, whereby the or each layer is formed over the surface of the substrate and over the structures extending from the surface. The thickness of the conformal layer, or the sum of the thicknesses of the conformal layers, is at least half the average spacing of the structures, and; at least one of the height of the structures, the average spacing of the structures and the size of the smallest dimension of the structures is set so as to provide an enhanced growth rate for the or each conformal layer (compared to the growth rate over a planar substrate). | 06-16-2011 |
20110180824 | LIGHT EMITTING DIODE DEVICE - A light emitting diode device which includes at least one light emitting diode, a heat-sink chassis having a surface upon which the at least one light emitting diode is mounted, and a waveguide having one end coupled to the at least one light emitting diode for receiving light therefrom. The waveguide has another end which includes a light extraction and redistribution region, and the waveguide is configured to guide light received from the at least one light emitting diode away from the heat-sink chassis and towards the light extraction and redistribution region. The light extraction and redistribution region is configured to extract and redistribute the light from the waveguide. | 07-28-2011 |
20110186879 | MULTIFUNCTIONAL TAPE - A method comprises forming elongate structures ( | 08-04-2011 |
20110272668 | NANOPARTICLES - The present application provides a light-emissive nitride nanoparticle, for example a nanocrystal, having a photoluminescence quantum yield of at least 1%. This quantum yield is significantly greater than for prior nitride nanoparticles, which have been only weakly emissive and have had poor control over the size of the nanoparticles produced. The nanoparticle includes at least one capping agent provided on a surface of the nitride crystal and containing an electron-accepting group for passivating nitrogen atoms at the surface of the crystal. The invention also provides non-emissive nitride nanoparticles. | 11-10-2011 |
20120018774 | FABRICATION OF NITRIDE NANOPARTICLES - A method of manufacturing a nitride nanoparticle comprises manufacturing the nitride nanostructure from constituents including: a material containing metal, silicon or boron, a material containing nitrogen, and a capping agent having an electron-accepting group for increasing the quantum yield of the nitride nanostructure. Nitride nanoparticles, for example nitride nanocrystals, having a photoluminescence quantum yield of at least 1%, and up to 20% or greater, may be obtained. | 01-26-2012 |
20120025139 | II-III-V COMPOUND SEMICONDUCTOR - The present application provides a new composition of matter in the form of a new compound semiconductor family of the type group Zn-(II)-III-N, where III denotes one or more elements in Group III of the periodic table and (II) denotes one or more optional further elements in Group II of the periodic table. Members of this family include for example, ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN or ZnAlGaInN. This type of compound semiconductor material is not previously known in the prior art. | 02-02-2012 |
20120025146 | II-III-N SEMICONDUCTOR NANOPARTICLES AND METHOD OF MAKING SAME - The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. | 02-02-2012 |
20120248413 | ENERGY CONVERSION DEVICE WITH SELECTIVE CONTACTS - A resonant tunneling device includes a first semiconductor material with an energy difference between valence and conduction bands of E | 10-04-2012 |
20150014587 | II-III-N SEMICONDUCTOR NANOPARTICLES AND METHOD OF MAKING SAME - The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated. The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays. | 01-15-2015 |