| Patent application number | Description | Published |
|---|
| 20080296351 | DIFFUSION BONDED FLUID FLOW APPARATUS USEFUL IN SEMICONDUCTOR MANUFACTURING - The present invention relates to a method of diffusion bonding of steel and steel alloys, to fabricate a fluid delivery system of the kind which would be useful in semiconductor processing and in other applications which require high purity fluid handling. | 12-04-2008 |
| 20080296354 | STAINLESS STEEL OR STAINLESS STEEL ALLOY FOR DIFFUSION BONDING - The present invention relates to stainless steel sheets which would be useful in semiconductor processing and in other applications which require high purity fluid handling. The invention also relates to a method of selecting and processing such sheets. | 12-04-2008 |
| 20090039057 | Method of increasing etchability of metals having chemical etching resistant microstructure - A space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The invention also includes an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and the various fluid handling and monitoring components may be partially integrated or fully integrated into the substrate, depending on design and material requirements. | 02-12-2009 |
| 20090266139 | REAL TIME LEAD-LINE CHARACTERIZATION FOR MFC FLOW VERIFICATION - A method and apparatus that solve the problem of accurate measurement of gas flow so that the delivery of gases in semiconductor processing may be performed with greater confidence and accuracy by performing real-time characterization of a lead-line for mass flow controller (MFC) flow verification are provided. In one embodiment a mass flow verifier (MFV) provides rate of rise information to a controller via a digital interface without correcting for lead-line influences. After receiving the rate of rise data from the tool host computer computes a gas mass correction factor in real-time based on at least one of the following: MFC temperature sensor data, lead-line temperature sensor data, lead-line pressure transducer data, and lead-line volume. The rate of rise data and gas mass correction factor are used to compute accurate mass flow. The accurate mass flow information may be used to calibrate the MFC. | 10-29-2009 |
| 20110178628 | N-CHANNEL FLOW RATIO CONTROLLER CALIBRATION - Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein. | 07-21-2011 |
| 20110265549 | METHODS AND APPARATUS FOR CALIBRATING FLOW CONTROLLERS IN SUBSTRATE PROCESSING SYSTEMS - Methods and apparatus for calibrating a plurality of gas flows in a substrate processing system are provided herein. In some embodiments, a substrate processing system may include a cluster tool comprising a first process chamber and a second process chamber coupled to a central vacuum transfer chamber; a first flow controller to provide a process gas to the first process chamber; a second flow controller to provide the process gas to the second process chamber; a mass flow verifier to verify a flow rate from each of the first and second flow controllers; a first conduit to selectively couple the first flow controller to the mass flow verifier; and a second conduit to selectively couple the second flow controller to the mass flow verifier. | 11-03-2011 |
| 20110265883 | METHODS AND APPARATUS FOR REDUCING FLOW SPLITTING ERRORS USING ORIFICE RATIO CONDUCTANCE CONTROL - Methods and apparatus for gas delivery to a process chamber are provided herein. In some embodiments, an apparatus for processing substrates may include a mass flow controller to provide a desired total fluid flow; a first flow control manifold comprising a first inlet, a first outlet, and a first plurality of orifices selectably coupled therebetween, wherein the first inlet is coupled to the mass flow controller; and a second flow control manifold comprising a second inlet, a second outlet, and a second plurality of orifices selectably coupled therebetween, wherein the second inlet is coupled to the mass flow controller; wherein a desired flow ratio between the first outlet and the second outlet is selectably obtainable when causing the fluid to flow through one or more of the first plurality of orifices of the first manifold and one or more of the second plurality of orifices of the second manifold. | 11-03-2011 |
| 20110265951 | TWIN CHAMBER PROCESSING SYSTEM - Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber and a second process chamber having independent processing volumes and a plurality of shared resources between the first and second process chambers. In some embodiments, the shared resources include at least one of a shared vacuum pump, a shared gas panel, or a shared heat transfer source. | 11-03-2011 |
