Patent application number | Description | Published |
20080225505 | Method of producing a MEMS device - A method of producing a MEMS device removes the bottom side of a device wafer after its movable structure is formed. To that end, the method provides the device wafer, which has an initial bottom side. Next, the method forms the movable structure on the device wafer, and then removes substantially the entire initial bottom side of the device wafer. Removal of the entire initial bottom side effectively forms a final bottom side. | 09-18-2008 |
20080237823 | Aluminum Based Bonding of Semiconductor Wafers - Aluminum or aluminum alloy on each of a pair of semiconductor wafers is thermocompression bonded. Aluminum-based seal rings or electrical interconnects between layers may be thus formed. On a MEMS device, the aluminum-based seal ring surrounds an area occupied by a movably attached microelectromechanical structure. According to a manufacturing method, wafers have an aluminum or aluminum alloy deposited thereon are etched to form an array of aluminum-based rings. The wafers are placed so as to bring the arrays of aluminum-based rings into alignment. Heat and compression bonds the rings. The wafers are singulated to separate out the individual semiconductor devices each with a bonded aluminum-based ring. | 10-02-2008 |
20080315334 | Packaged chip devices with atomic layer deposition protective films - A low-temperature inorganic dielectric ALD film (e.g., Al | 12-25-2008 |
20100059835 | Apparatus and Method of Wafer Bonding Using Compatible Alloy - A method of forming an inertial sensor provides 1) a device wafer with a two-dimensional array of inertial sensors and 2) a second wafer, and deposits an alloy of aluminum/germanium onto one or both of the wafers. The alloy is deposited and patterned to form a plurality of closed loops. The method then aligns the device wafer and the second wafer, and then positions the alloy between the wafers. Next, the method melts the alloy, and then solidifies the alloy to form a plurality of conductive hermetic seal rings about the plurality of the inertial sensors. The seal rings bond the device wafer to the second wafer. Finally, the method dices the wafers to form a plurality of individual, hermetically sealed inertial sensors. | 03-11-2010 |
20100062565 | Substrate Bonding with Bonding Material Having Rare Earth Metal - A microchip has a bonding material that bonds a first substrate to a second substrate. The bonding material has, among other things, a rare earth metal and other material. | 03-11-2010 |
20100285628 | Micromachined microphone and multisensor and method for producing same - A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures. | 11-11-2010 |
20100289097 | Integrated Microphone - A method of forming a microphone having a variable capacitance first deposits high temperature deposition material on a die. The high temperature material ultimately forms structure that contributes to the variable capacitance. The method then forms circuitry on the die after depositing the deposition material. The circuitry is configured to detect the variable capacitance. | 11-18-2010 |
20110212563 | Apparatus and Method of Wafer Bonding Using Compatible Alloy - A method of forming an inertial sensor provides 1) a device wafer with a two-dimensional array of inertial sensors and 2) a second wafer, and deposits an alloy of aluminum/germanium onto one or both of the wafers. The alloy is deposited and patterned to form a plurality of closed loops. The method then aligns the device wafer and the second wafer, and then positions the alloy between the wafers. Next, the method melts the alloy, and then solidifies the alloy to form a plurality of conductive hermetic seal rings about the plurality of the inertial sensors. The seal rings bond the device wafer to the second wafer. Finally, the method dices the wafers to form a plurality of individual, hermetically sealed inertial sensors. | 09-01-2011 |
20110241176 | Substrate Bonding with Bonding Material Having Rare Earth Metal - A microchip has a bonding material that bonds a first substrate to a second substrate. The bonding material has, among other things, a rare earth metal and other material. | 10-06-2011 |
20110244630 | Method of Substrate Bonding with Bonding Material Having Rare Earth Metal - A microchip has a bonding material that bonds a first substrate to a second substrate. The bonding material has, among other things, a rare earth metal and other material. | 10-06-2011 |
20130023082 | Apparatus and Method of Wafer Bonding Using Compatible Alloy - A method of forming a MEMS device provides first and second wafers, where at least one of the first and second wafers has a two-dimensional array of MEMS devices. The method deposits a layer of first germanium onto the first wafer, and a layer of aluminum-germanium alloy onto the second wafer. To deposit the alloy, the method deposits a layer of aluminum onto the second wafer and then a layer of second germanium to the second wafer. Specifically, the layer of second germanium is deposited on the layer of aluminum. Next, the method brings the first wafer into contact with the second wafer so that the first germanium in the aluminum-germanium alloy contacts the second germanium. The wafers then are heated when the first and second germanium are in contact, and cooled to form a plurality of conductive hermetic seal rings about the plurality of the MEMS devices. | 01-24-2013 |