| Patent application number | Description | Published |
|---|
| 20090044748 | System with multi-location arc threshold comparators and communication channels for carrying arc detection flags and threshold updating - A plasma reactor system for processing a wafer in which respective comparators are coupled to the respective RF transient sensors which are coupled in turn to respective RF power application points. The comparators have respective comparison thresholds. The system further includes a controller programmed to updating the respective thresholds of the comparators with respective updated thresholds for different ones of the steps of the process recipe. | 02-19-2009 |
| 20090044750 | Apparatus for wafer level arc detection at an electrostatic chuck electrode - Wafer level arc detection is provided in a plasma reactor using an RF transient sensor sensing voltage at an electrostatic chucking electrode, the RF sensor being coupled to a threshold comparator, and a system controller responsive to the threshold comparator. | 02-19-2009 |
| 20090045046 | Method of multi-location ARC sensing with adaptive threshold comparison - A method of responding to voltage or current transients during processing of a wafer in a plasma reactor at each of plural RF power applicators and at the wafer support surface. For each process step and for each of the power applicators and the wafer support surface, the method includes determining an arc detection threshold lying above a noise level. The method further includes comparing each transient with the threshold determined for the corresponding power applicator or wafer support surface, and issuing an arc detect flag if the transient exceeds the threshold. | 02-19-2009 |
| 20090053836 | Method of wafer level transient sensing, threshold comparison and arc flag generation/deactivation - A method for processing a semiconductor wafer in a plasma reactor comprises sensing transient voltages or currents on a conductor coupled to the wafer and providing a first comparator for comparing the transient voltages or currents with a threshold level stored in the comparator. The method further includes transmitting from the comparator an arc flag signal whenever a transient voltage or current is sensed that exceeds the threshold level, and deactivating the power generator in response to the arc flag signal. | 02-26-2009 |
| 20090159439 | Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrode - Wafer level arc detection is provided in a plasma reactor using an RF transient sensor coupled to a threshold comparator, and a system controller responsive to the threshold comparator. | 06-25-2009 |
| 20090229969 | Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface - In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator. | 09-17-2009 |
| 20100096261 | PHYSICAL VAPOR DEPOSITION REACTOR WITH CIRCULARLY SYMMETRIC RF FEED AND DC FEED TO THE SPUTTER TARGET - In a PVD reactor having a sputter target at the ceiling, a conductive housing enclosing the rotating magnet assembly has a central port for the rotating magnet axle. A conductive hollow cylinder of the housing surrounds an external portion of the spindle. RF power is coupled to a radial RF connection rod extending radially from the hollow cylinder. DC power is coupled to another radial DC connection rod extending radially from the hollow cylinder. | 04-22-2010 |
| 20120028461 | METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES - Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening. | 02-02-2012 |
