Patent application number | Description | Published |
20090152529 | LIGHT EMITTING DEVICES WITH INHOMOGENEOUS QUANTUM WELL ACTIVE REGIONS - A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer. | 06-18-2009 |
20100006023 | Method For Preparing Films And Devices Under High Nitrogen Chemical Potential - Nitride semiconductor films, such as for use in solid state light emitting devices and electronic devices, are fabricated in an environment of relatively high nitrogen potential such that nitrogen vacancies in the growing film are reduced. A reactor design, and method for its use, provide high nitrogen precursor partial pressure, precracking of the precursor using a catalytic metal surface, prepyrolyzing the precursor, using catalytically-cracked molecular nitrogen as a nitrogen precursor, and/or exposing the surface to an ambient which is extremely rich in active nitrogen species. Improved efficiency for light emitting devices, particularly in the blue and green wavelengths and improve transport properties in nitride electronic devices, i.e., improved performance from nitride-based devices such as InGaAlN laser diodes, transistors, and light emitting diodes is thereby provided. | 01-14-2010 |
20100158544 | FLEXIBLE DIAGNOSTIC SENSOR SHEET - A system of diagnosing a printer or photocopying system using a flexible diagnostic sheet is described. In the system, a thin diagnostic sheet including a plurality of sensors formed on the sheet is run through the paper path of the printing system. The printing system subjects the diagnostic sheet to the printing process, including the deposition of fuser oil and toner on the sheet. Sensors on the sheet record various parameters, including but not limited to the amount of fuser oil deposited and the charge on various toner particles. The information is transmitted to service personnel or the printer end user to enable timely repair of the printer. | 06-24-2010 |
20100197062 | LIGHT EMITTING DEVICES WITH INHOMOGENEOUS QUANTUM WELL ACTIVE REGIONS - A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer. | 08-05-2010 |
20110291074 | Semi-Polar Nitride-Based Light Emitting Structure and Method of Forming Same - A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer. | 12-01-2011 |
20120280212 | Semi-Polar Nitride-Based Light Emitting Structure and Method of Forming Same - A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer. | 11-08-2012 |
20130082237 | ULTRAVIOLET LIGHT EMITTING DEVICES HAVING ENHANCED LIGHT EXTRACTION - Light emitting devices having an enhanced degree of polarization, P | 04-04-2013 |
20130115846 | SELF ASSEMBLY OF FIELD EMISSION TIPS BY CAPILLARY BRIDGE FORMATIONS - A first side has a first surface on which is located a material, at least a portion of which is to be formed into at least one tip. A second side has a second surface which is heated. At least one of the first and second surfaces being moved so material located on the first surface comes into physical contact with the second surface. Then at least one of the first side and the second side are moved, wherein the physical contact between the material and the second surface is maintained, causing the material to stretch between the second surface and the first surface, generating at least one capillary bridge. Movement is continued until the physical contact between the material and the second surface is broken resulting in the formation of at least one sharp conductive tip. | 05-09-2013 |
20130250986 | OPTICALLY PUMPED SURFACE EMITTING LASERS INCORPORATING HIGH REFLECTIVITY/ BANDWIDTH LIMITED REFLECTOR - Optically pumped laser structures incorporate reflectors that have high reflectivity and are bandwidth limited to a relatively narrow band around the central laser radiation wavelength. In some cases, the reflectors may be ¾-wavelength distributed Bragg reflectors (DBRs). | 09-26-2013 |
20130343420 | SURFACE EMITTING LASER INCORPORATING THIRD REFLECTOR - Surface emitting laser structures that include a partially reflecting element disposed in the laser optical cavity are disclosed. A vertical external cavity surface emitting laser (VECSEL) structure includes a pump source configured to emit radiation at a pump wavelength, λ | 12-26-2013 |
20140072009 | ELECTRON BEAM PUMPED VERTICAL CAVITY SURFACE EMITTING LASER - A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λ | 03-13-2014 |
20140154826 | ETCH STOP LAYERS IN NITRIDE SEMICONDUCTORS CREATED BY POLARITY INVERSION - A method of producing a semiconductor device can include receiving a Group III-N wafer as a substrate, initiating a first inversion domain boundary layer to form a thin etch stop layer, terminating the etch stop layer with a second inversion domain boundary layer, and subsequently continuing the active region growth. | 06-05-2014 |
20140231745 | P-SIDE LAYERS FOR SHORT WAVELENGTH LIGHT EMITTERS - A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of Al | 08-21-2014 |
20140369367 | Structure For Electron-Beam Pumped Edge-Emitting Device and Methods for Producing Same - A semiconductor light emitting device includes a light guiding structure, a light emitting layer disposed within the light guiding structure, and a structure for discharging excess electric charge within the device. The device may be excited by an electron beam, as opposed to an optical beam, to create electron-hole pairs. The light emitting layer is configured for light generation without requiring a p-n junction, and is therefore not embedded within nor part of a p-n junction. Doping with p-type species is obviated, reducing device loss and permitting operation at a short wavelengths, such as below 300 nm. Various structures, such as a top-side cladding layer, are disclosed for discharging beam-induced charge. A single device may be operated with multiple electron beam pumps, either to enable a relatively thick active layer or to drive multiple separate active layers. Cooperatively curved end facets accommodate for possible off-axis resonance within the active region(s). | 12-18-2014 |
20150048397 | TRANSPARENT ELECTRON BLOCKING HOLE TRANSPORTING LAYER - A light emitting diode includes an active region configured to emit light, a composite electrical contact layer, and a transparent electron blocking hole transport layer (TEBHTL). The composite electrical contact layer includes two materials. At least one of the two materials is a metal configured to reflect a portion of the emitted light. The TEBHTL is arranged between the composite electrical contact layer and the active region. The TEBHTL has a thickness that extends at least a majority of a distance between the active region and the composite electrical contact layer. The TEBHTL has a band-gap greater than a band-gap of light emitting portions of the active region. The band-gap of the TEBHTL decreases as a function of distance from the active region to the composite electrical contact layer over a majority of the thickness of the TEBHTL. | 02-19-2015 |