| Patent application number | Description | Published |
|---|
| 20080254218 | Metal Precursor Solutions For Chemical Vapor Deposition - Metal source containing precursor liquid solutions for chemical vapor deposition processes, including atomic layer deposition, for fabricating conformal metal-containing films on substrates are described. More specifically, the metal source precursor liquid solutions are comprised of (i) at least one metal complex selected from β-diketonates, β-ketoiminates, β-diiminates, alkyl metal, metal carbonyl, alkyl metal carbonyl, aryl metal, aryl metal carbonyl, cyclopentadienyl metal, cyclopentadienyl metal isonitrile, cyclopentadienyl metal nitrile, cyclopentadienyl metal carbonyl, metal alkoxide, metal ether alkoxide, and metal amides wherein the ligand can be monodentate, bidentate and multidentate coordinating to the metal atom and the metal is selected from group 2 to 14 elements, and (ii) a solvent selected from organic amides including linear amides and cyclic amides for such metal source containing precursors. | 10-16-2008 |
| 20080271640 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants - A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula Si | 11-06-2008 |
| 20080305268 | Low Temperature Thermal Conductive Inks - Novel copper alkoxide compound based ink formulations and their chemical syntheses are disclosed. The method of using the ink formulations to print conducting copper metal lines with standard ink jet printing and curing at <150° C. is also disclosed. | 12-11-2008 |
| 20080318418 | Process for Forming Continuous Copper Thin Films Via Vapor Deposition - A process for preparing a multi-layer substrate is described herein. In one embodiment, the process provides a multi-layer substrate comprising a first layer and a second layer where the process comprises the steps of providing the first layer comprising a barrier area and a copper area; and depositing the second layer comprising copper onto the first layer wherein the depositing provides the second layer comprising a first thickness ranging from about 20 Angstroms to about 2,000 Angstroms onto the barrier area and a second thickness ranging from about 0 Angstroms to about 1,000 Angstroms onto the copper area in the first layer wherein the first thickness is greater than the second thickness. | 12-25-2008 |
| 20090114874 | Copper Precursors for Thin Film Deposition - Non-fluorinated copper precursors and methods for making and using same are described herein. In certain embodiments, the copper precursors described herein may be used as precursors to deposit copper films and alloys thereof on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions. | 05-07-2009 |
| 20100038785 | Materials for Adhesion Enhancement of Copper Film on Diffusion Barriers - We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate β-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium. | 02-18-2010 |
| 20100119726 | Group 2 Metal Precursors For Deposition Of Group 2 Metal Oxide Films - This invention is related to Group 2 metal-containing polydentate β-ketoiminate precursors and compositions comprising Group 2 metal-containing polydentate β-ketoiminate precursors, wherein the polydentate β-ketoiminate precursors incorporate an alkoxy group in the imino portion of the molecule. The compounds and compositions are useful for fabricating metal containing films on substrates such as silicon, metal nitride, metal oxide and other metal layers via chemical vapor deposition (CVD) processes. | 05-13-2010 |
| 20100130779 | Volatile Group 2 Metal 1,3,5-Triazapentadienate Compounds - The present invention is directed to Group 2 metal 1,3,5-triazapentadiene compositions, such as bis(1,5-bisN,N′(methoxyethyl)-2,4-bis(dimethylamido)-1,3,5-triazapentadienate) barium; and the deposition of the metals of such metal ligand compositions by chemical vapor deposition, pulsed chemical vapor deposition or atomic layer deposition to produce Group 2 metal containing films, such as barium, strontium titanate ternary films or strontium titanate binary films for electronic materials device manufacturing. | 05-27-2010 |
| 20100173075 | High Coordination Sphere Group 2 Metal B-Diketiminate Precursors - The present invention is directed to high coordination sphere Group 2 metal β-diketiminate compositions, such as bis(N-(2,2-methoxyethyl)-4-(2,2-methoxyethylimino)-2-penten-2-aminato) barium; and the deposition of the metals of such metal ligand compositions by chemical vapor deposition, pulsed chemical vapor deposition, molecular layer deposition or atomic layer deposition to produce Group 2 metal containing films, such as barium strontium titanate films or strontium titanate films or barium doped lanthanate as high k materials for electronic device manufacturing. | 07-08-2010 |
| 20110120875 | Volatile Group 2 Metal Precursors - A compound comprising one or more polyfunctionalized pyrrolyl anions coordinated to a metal selected from the group consisting of barium, strontium, magnesium, radium or calcium or mixtures thereof. Alternatively, one anion can be substituted with and a second non-pyrrolyl anion. | 05-26-2011 |
| 20110135838 | Liquid Precursor for Depositing Group 4 Metal Containing Films - The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR | 06-09-2011 |
| 20110143032 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films With Low Dielectric Constants - A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula Si | 06-16-2011 |
