| Patent application number | Description | Published |
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| 20090050924 | DROOP-FREE HIGH OUTPUT LIGHT EMITTING DEVICES AND METHODS OF FABRICATING AND OPERATING SAME - Light emitting devices include a semiconductor light emitting diode that is configured to operate at a substantially droop-free quantum efficiency while producing warm white light output of at least about 100 lumens/cool white light output of at least about 130 lumens. The semiconductor light emitting diode may include a single semiconductor die of at least about 4 mm | 02-26-2009 |
| 20090068774 | LED Bonding Structures and Methods of Fabricating LED Bonding Structures - A method is disclosed for fabricating an LED The method includes providing an LED chip having an epitaxial region comprising at least a p-type layer and an n-type layer, an ohmic contact formed on at least one of the p-type layer or the n-type layer, and a bond pad formed on the ohmic contact. The bond pad has a total volume less than about 3×10 | 03-12-2009 |
| 20090104726 | LED Fabrication Via Ion Implant Isolation - A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation. | 04-23-2009 |
| 20090166659 | High Efficiency Group III Nitride LED with Lenticular Surface - A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode. | 07-02-2009 |
| 20090242918 | High Efficiency Group III Nitride LED with Lenticular Surface - A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated by the barrier metal layer and is isolated from the bonding metal by the barrier layer. A p-type gallium nitride epitaxial layer is on the encapsulated mirror, an indium gallium nitride active layer is on the p-type layer, and an n-type gallium nitride layer is on the indium gallium nitride layer, and a bond pad is made to the n-type gallium nitride layer. | 10-01-2009 |
| 20100052004 | LED Bonding Structures and Methods of Fabricating LED Bonding Structures - An LED is disclosed that includes a conductive submount, a bond pad having a total volume less than 3×10 | 03-04-2010 |
| 20100124243 | SEMICONDUCTOR LIGHT EMITTING APPARATUS INCLUDING ELONGATED HOLLOW WAVELENGTH CONVERSION TUBES AND METHODS OF ASSEMBLING SAME - A semiconductor light emitting apparatus includes an elongated hollow wavelength conversion tube that includes an elongated wavelength conversion tube wall having wavelength conversion material, such as phosphor, dispersed therein. A semiconductor light emitting device is oriented to emit light inside the elongated hollow wavelength conversion tube to impinge upon the elongated wavelength conversion tube wall and the wavelength conversion material dispersed therein. The elongated hollow wavelength conversion tube may have an open end, a crimped end, a reflective end, and/or other configurations. Multiples tubes and/or multiple semiconductor light emitting devices may also be used in various configurations. Related assembling methods are also described. | 05-20-2010 |
| 20110042705 | SEMICONDUCTOR LIGHT EMITTING DIODES INCLUDING MULTIPLE BOND PADS ON A SINGLE SEMICONDUCTOR DIE - A light emitting device includes a single semiconductor die light emitting diode and at least five bond pads on the single semiconductor die. The bond pads may be in the four corners and at least one midpoint of the single semiconductor die. A wavelength conversion layer may be provided and bond pad extensions may extend through the wavelength conversion layer. Multiple wire bond connections may also be provided. | 02-24-2011 |
