| Patent application number | Description | Published |
|---|
| 20080259298 | Lithographic apparatus and device manufacturing method - A lithographic apparatus for maskless EUV applications includes an illumination system constructed and arranged to condition a radiation beam and to supply the conditioned radiation beam to a spatial light modulator, a substrate table constructed and arranged to hold a substrate, and a projection system constructed and arranged to project the conditioned radiation beam onto a target portion of the substrate. The illumination system includes a field facet mirror constructed and arranged to define a field of the conditioned radiation beam. The field facet mirror is constructed and arranged to optically match a source of radiation and the illumination system. | 10-23-2008 |
| 20080302980 | Extreme ultra-violet lithographic apparatus and device manufacturing method - An extreme ultra-violet lithographic apparatus for imaging a pattern onto a substrate includes a radiation system constructed and arranged to provide a beam of an extreme ultra-violet radiation, and an absorber arranged in the beam and constructed and arranged to absorb at least a portion of the radiation beam. The absorber has a volume configured to accommodate a flow of an absorbing gas. The flow is directed in a transverse direction with respect to the beam. The absorber includes a structure having an extreme ultra-violet radiation-transmissive beam entry area and an extreme ultra-violet radiation-transmissive beam exit area. The apparatus also includes a gas inlet actuator array configured to inject the gas into the volume and a gas outlet actuator array arranged to evacuate the gas from the volume. | 12-11-2008 |
| 20080315134 | OPTICAL SYSTEM FOR RADIATION IN THE EUV-WAVELENGTH RANGE AND METHOD FOR MEASURING A CONTAMINATION STATUS OF EUV-REFLECTIVE ELEMENTS - An optical system for radiation in the EUV wavelength range, in particular a projection exposure apparatus, having at least one vacuum vessel, including: at least one EUV-reflective optical element arranged in an optical path, and a holder which includes at least one sample element, the sample element having an optical surface which is exposed to incident EUV-radiation outside of the optical path, the sample element being sensitive to chemical alterations under influence of the incident EUV-radiation which also affect the optical element. The optical system further includes at least one detection unit for online detection of the contamination status of the sample element during exposure of the sample element to the incident EUV-radiation. | 12-25-2008 |
| 20090072168 | Radical cleaning arrangement for a lithographic apparatus - A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited. | 03-19-2009 |
| 20090090877 | MODULE AND METHOD FOR PRODUCING EXTREME ULTRAVIOLET RADIATION - A module for producing extreme ultraviolet radiation includes a supply configured to supply droplets of an ignition material to a predetermined target ignition position and a laser arranged to be focused on the predetermined target ignition position and to produce a plasma by hitting such a droplet which is located at the predetermined target ignition position in order to change the droplet into an extreme ultraviolet producing plasma. Also, the module includes a collector mirror having a mirror surface constructed and arranged to reflect the radiation in order to focus the radiation on a focal point. A fluid supply is constructed and arranged to form a gas flow flowing away from the mirror surface in a direction transverse with respect to the mirror surface in order to mitigate particle debris produced by the plasma. | 04-09-2009 |
| 20090115980 | Illumination system and filter system - A lithographic apparatus includes an illumination system configured to condition a radiation beam, a projection system configured to project the radiation beam onto a substrate, and a filter system for filtering debris particles out of the radiation beam. The filter system includes a plurality of foils for trapping the debris particles, a support for holding the plurality of foils, and a cooling system having a surface that is arranged to be cooled. The cooling system and the support are positioned with respect to each other such that a gap is formed between the surface of the cooling system and the support. The cooling system is further arranged to inject gas into the gap. | 05-07-2009 |
| 20090173360 | Lithographic Apparatus, and Device Manufacturing Method - A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface. | 07-09-2009 |
| 20090231707 | OPTICAL ARRANGEMENT, IN PARTICULAR PROJECTION EXPOSURE APPARATUS FOR EUV LITHOGRAPHY, AS WELL AS REFLECTIVE OPTICAL ELEMENT WITH REDUCED CONTAMINATION - An optical arrangement, in particular a projection exposure apparatus ( | 09-17-2009 |
| 20090314931 | METHOD FOR REMOVING CONTAMINATION ON OPTICAL SURFACES AND OPTICAL ARRANGEMENT - A method and an optical arrangement for removing contamination on optical surfaces ( | 12-24-2009 |
| 20100053581 | RADIATION SOURCE AND LITHOGRAPHIC APPARATUS - A radiation source is configured to generate extreme ultraviolet radiation. The radiation source includes a droplet generator constructed and arranged to generate fuel droplets, a heater constructed and arranged to heat the fuel droplets following generation of the fuel droplets by the droplet generator, and reduce the mass of fuel present in the fuel droplets and/or reduce the density of the fuel droplets, and a radiation emitter constructed and arranged to direct radiation onto the fuel droplets that have been heated by the heater to generate the extreme ultraviolet radiation. | 03-04-2010 |
| 20100085547 | SOURCE MODULE, RADIATION SOURCE AND LITHOGRAPHIC APPARATUS - A radiation source is configured to generate extreme ultraviolet radiation. The radiation source includes a fuel supply configured to supply a fuel to a plasma formation site; a laser configured to emit a beam of radiation to the plasma formation site so that a plasma that emits extreme ultraviolet radiation is generated when the beam of radiation impacts the fuel; a fuel particulate interceptor constructed and arranged to shield at least part of the radiation source from fuel particulates that are emitted by the plasma, the fuel particulate interceptor comprising a first portion and a second portion, the second portion being positioned closer to the plasma formation site than the first portion, and the first portion being rotatable; and a fuel particulate remover constructed and arranged to remove fuel particulates from a surface of the fuel particulate interceptor and to direct the fuel particulates towards a collection location. | 04-08-2010 |
| 20100112494 | APPARATUS AND METHOD FOR MEASURING THE OUTGASSING AND EUV LITHOGRAPHY APPARATUS - An apparatus and method for measuring an outgassing in a EUV lithography apparatus. The method includes activating a surface within the EUV lithography apparatus, inducing the outgassing, analyzing a residual gas. Defining a maximum partial pressure, recording a mass spectrum of the residual gas, converting the highest-intensity peaks of the mass spectrum into sub-partial pressures, summing the sub-partial pressures, and comparing the summed result with the defined maximum partial pressure. An EUV lithography apparatus includes a residual gas analyzer and a stimulation unit comprised of at least on of an electron source, an ion source, a photon source, and a plasma source. A measurement setup for measuring the outgassing from components by analyzing the residual gas includes a residual gas analyzer, a vacuum chamber, and a stimulation unit comprised of at least on of an electron source, an ion source, a photon source, and a plasma source. | 05-06-2010 |
| 20100151394 | System for Contactless Cleaning, Lithographic Apparatus and Device Manufacturing Method - Embodiments of the invention relate to a system for contactless cleaning of an object surface, a lithographic apparatus including the system, and a method of manufacturing a device. The system may include a He plasma source contained in a chamber and a control unit constructed to modify plasma parameters in use, such as the electron energy distribution of the plasma for causing an increase in formation of He metastables without modifying operational parameters of the plasma source. The control unit may include an electrical biasing unit constructed to apply a positive bias voltage to the object, for attracting free electrons from the plasma. The system may include a supplementary gas source, which may be either pre-mixed with He or be supplied from a further gas source. The supplementary gas may be selected based on a pre-knowledge on a type of particles to be expected on the surface of the object. | 06-17-2010 |
| 20100288302 | Method for removing a contamination layer from an optical surface and arrangement therefor as well as a method for generating a cleaning gas and arrangement therefor - The invention is directed to a method for at least partially removing a contamination layer ( | 11-18-2010 |
| 20110013157 | LITHOGRAPHIC APPARATUS COMPRISING A MAGNET, METHOD FOR THE PROTECTION OF A MAGNET IN A LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A lithographic apparatus includes a magnet being contained in a protective enclosure, the protective enclosure being arranged to protect the magnet from contact with a H | 01-20-2011 |
| 20110013166 | RADIATION SYSTEM AND LITHOGRAPHIC APPARATUS - A radiation system includes a target material supply configured to supply droplets of target material along a trajectory, and a laser system that includes an amplifier and optics. The optics are configured to establish a first beam path which passes through the amplifier and through a first location on the trajectory, and to establish a second beam path which passes through the amplifier and through a second location on the trajectory. The laser system is configured to generate a first pulse of laser radiation when photons emitted from the amplifier are reflected along the first beam path by a droplet of target material at the first location on the trajectory. The laser system is configured to generate a second pulse of laser radiation when photons emitted from the amplifier are reflected along the second beam path by the droplet of target material at the second location on the trajectory. | 01-20-2011 |
| 20110019174 | OPTICAL ELEMENT, LITHOGRAPHIC APPARATUS INCLUDING SUCH AN OPTICAL ELEMENT, DEVICE MANUFACTURING METHOD, AND DEVICE MANUFACTURED THEREBY - An optical element includes a first layer that includes a first material, and is configured to be substantially reflective for radiation of a first wavelength and substantially transparent for radiation of a second wavelength. The optical element includes a second layer that includes a second material, and is configured to be substantially absorptive or transparent for the radiation of the second wavelength. The optical element includes a third layer that includes a third material between the first layer and the second layer, and is substantially transparent for the radiation of the second wavelength and configured to reduce reflection of the radiation of the second wavelength from a top surface of the second layer facing the first layer. The first layer is located upstream in the optical path of incoming radiation with respect to the second layer in order to improve spectral purity of the radiation of the first wavelength. | 01-27-2011 |
| 20110037960 | LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD, CLEANING SYSTEM AND METHOD FOR CLEANING A PATTERNING DEVICE - A lithographic apparatus includes an illumination system configured to condition a beam of radiation, and a support structure configured to support a patterning device. The patterning device is configured to impart a pattern to the beam of radiation. The apparatus includes a patterning device cleaning system configured to provide an electrostatic force to contaminant particles that are on the patterning device and that are electrically charged by the beam of radiation, in order to remove the contaminant particles from the patterning device. | 02-17-2011 |
| 20110037961 | LITHOGRAPHIC APPARATUS COMPRISING AN INTERNAL SENSOR AND A MINI-REACTOR, AND METHOD FOR TREATING A SENSING SURFACE OF THE INTERNAL SENSOR - A lithographic apparatus includes a projection system constructed and arranged to project a beam of radiation onto a target portion of a substrate, an internal sensor having a sensing surface, and a mini-reactor movable with respect to the sensor. The mini-reactor includes an inlet for a hydrogen containing gas, a hydrogen radical generator, and an outlet for a hydrogen radical containing gas. The mini-reactor is constructed and arranged to create a local mini-environment comprising hydrogen radicals to treat the sensing surface. | 02-17-2011 |
| 20110043777 | TARGET MATERIAL, A SOURCE, AN EUV LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD USING THE SAME - A target material is configured to be used in a source constructed and arranged to generate a radiation beam having a wavelength in an extreme ultraviolet range. The target material includes a Gd-based composition configured to modify a melting temperature of Gd. | 02-24-2011 |
| 20110080573 | MULTILAYER MIRROR AND LITHOGRAPHIC APPARATUS - A multilayer mirror is constructed and arranged to reflect radiation haying a wavelength in the range of 2-8 nm. The multilayer mirror has alternating layers selected from the group consisting of: Cr and Sc layers, Cr and C layers, C and B | 04-07-2011 |
| 20110090495 | LITHOGRAPHIC APPARATUS AND CONTAMINATION DETECTION METHOD - A lithographic apparatus includes a vessel that encloses a component with a test surface to be probed for contamination control; and an optical probe configured to transmit and receive an optical probing beam. The vessel includes a first optical port configured to transfer the optical probing beam towards the test surface, and a second optical port configured to receive a reflected optical probing beam. The optical probe includes a light source configured to provide the optical probing beam, a polarization conditioner configured to provide a predefined polarization state to the probing beam, and a spectral analyzer. The polarization conditioner is preset to provide a minimal transmission for a minimal transmission wavelength, and the spectral analyzer is arranged to detect a wavelength shift of the minimal transmission wavelength in response to a polarization change due to the presence of contamination. | 04-21-2011 |
| 20110121177 | System and Method for Detecting at Least One Contamination Species in a Lithographic Apparatus - A system for detecting at least one contamination species in an interior space of a lithographic apparatus, including: at least one monitoring surface configured to be in contact with the interior space, a thermal controller configured to control the temperature of the monitoring surface to at least one detection temperature, and at least one detector configured to detect condensation of the at least one contamination species onto the monitoring surface. | 05-26-2011 |
| 20110126406 | Lithographic Apparatus and Method of Manufacturing an Electrostatic Clamp for a Lithographic Apparatus - The invention relates to a method of manufacturing an electrostatic clamp configured to electrostatically clamp an article to an article support in a lithographic apparatus. The method includes providing a first layer of material, etching a recess in the first layer of material, and disposing an electrode in the recess of the first layer of material. | 06-02-2011 |
| 20110143269 | RADIATION SOURCE, LITHOGRAPHIC APPARATUS, AND DEVICE MANUFACTURING METHOD - A spectral purity filter is configured to transmit extreme ultraviolet (EUV) radiation and deflect or absorb non-EUV secondary radiation. In an embodiment, the spectral purity filter includes a body of material highly transmissive of EUV radiation and a layer of material highly reflective of non-EUV secondary radiation located on a radiation incident side of the body. In an embodiment, the spectral purity filter includes a body of material highly transmissive of EUV radiation and a layer of high emissivity material on an end of the body. | 06-16-2011 |
