| Patent application number | Description | Published |
|---|
| 20080230802 | Semiconductor Device Comprising a Heterojunction - A semiconductor device with a heterojunction. The device comprises a substrate and at least one nanostructure. The substrate and nanostructure is of different materials. The substrate may e.g. be of a group IV semiconductor material, whereas the nanostructure may be of a group III-V semiconductor material. The nanostructure is supported by and in epitaxial relationship with the substrate. A nanostructure may be the functional component of an electronic device such as a gate-around-transistor device. In an embodiment of a gate-around-transistor, a nanowire ( | 09-25-2008 |
| 20090170001 | ELECTROCHEMICAL ENERGY SOURCE, ELECTRONIC MODULE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING OF SAID ENERGY SOURCE - The invention relates to an electrochemical energy source comprising at least one assembly of: a first electrode, a second electrode, and an intermediate solid-state electrolyte separating said first electrode and said second electrode. The invention also relates to an electronic module provided with such an electrochemical energy source. The invention further relates to an electronic device provided with such an electrochemical energy source. Moreover, the invention relates to a method of manufacturing of such an electrochemical energy source. | 07-02-2009 |
| 20110086246 | SEMICONDUCTOR DEVICE COMPRISING A SOLAR CELL, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND APPARATUS COMPRISING A SEMICONDUCTOR DEVICE - The invention relates to a semiconductor device includes a substrate ( | 04-14-2011 |
| 20110101471 | METHOD OF FORMING A NANOCLUSTER-COMPRISING DIELECTRIC LAYER AND DEVICE COMPRISING SUCH A LAYER - A method of forming a dielectric layer on a further layer of a semiconductor device is disclosed. The method comprises depositing a dielectric precursor compound and a further precursor compound over the further layer, the dielectric precursor compound comprising a metal ion from the group consisting of Yttrium and the Lanthanide series elements, and the further precursor compound comprising a metal ion from the group consisting of group IV and group V metals; and chemically converting the dielectric precursor compound and the further precursor compound into a dielectric compound and a further compound respectively, the further compound self-assembling during said conversion into a plurality of nanocluster nuclei within the dielectric layer formed from the first dielectric precursor compound. The nanoclusters may be dielectric or metallic in nature. Consequently, a dielectric layer is formed that has excellent charge trapping capabilities. Such a dielectric layer is particularly suitable for use in semiconductor devices such as non-volatile memories. | 05-05-2011 |
| 20110108955 | Semiconductor device and manufacturing method - The present invention relates to a device ( | 05-12-2011 |
| 20110128111 | PLANAR, MONOLITHICALLY INTEGRATED COIL - The present invention provides a means to integrate planar coils on silicon, while providing a high inductance. This high inductance is achieved through a special back- and front sided shielding of a material. In many applications, high-value inductors are a necessity. In particular, this holds for applications in power management. In these applications, the inductors are at least 5 of the order of 1 μH, and must have an equivalent series resistance of less than 0.1 Ω. For this reason, those inductors are always bulky components, of a typical size of 2×2×1 mm 3, which make a fully integrated solution impossible. On the other hand, integrated inductors, which can monolithically be integrated, do exist. However, these inductors suffer either from low inductance values, or 10 very-high DC resistance values. | 06-02-2011 |
| 20110128727 | INTEGRATED SEEBECK DEVICE - An integrated device includes a Seebeck device ( | 06-02-2011 |
| 20110147891 | CAPACITOR AND A METHOD OF MANUFACTURING THE SAME - A capacitor ( | 06-23-2011 |
