| Patent application number | Description | Published |
|---|
| 20080280435 | Producing a Covered Through Substrate Via Using a Temporary Cap Layer - The present invention relates to a method for producing a substrate with at least one covered via that electrically and preferably also thermally connects a first substrate side with an opposite second substrate side. The processing involves forming a trench on a the first substrate side remains and covering the trench with a permanent layer on top of a temporary, sacrificial cap-layer, which is decomposed in a thermal process step. The method of the invention provides alternative ways to remove decomposition products of the sacrificial cap-layer material without remaining traces or contamination even in the presence of the permanent layer This is, according to a first aspect of the invention, achieved by providing the substrate trench with an overcoat layer that has holes. The holes in the overcoat layer leave room for the removal of the decomposition products of the cap-layer material. According to the second aspect of the invention, opening the covered trench from the second substrate side and allowing the cap-layer material to be removed through that opening provides a solution. Both methods of the present invention are based on the common idea of using a temporary cap-layer even in a situation where the substrate opening is permanently covered before the removal of the temporary cap-layer | 11-13-2008 |
| 20080291601 | Integrated Capacitor Arrangement for Ultrahigh Capacitance Values - The present invention relates to an electronic device ( | 11-27-2008 |
| 20090146760 | ASSEMBLY, CHIP AND METHOD OF OPERATING | 06-11-2009 |
| 20090302419 | METHOD OF MODIFYING SURFACE AREA AND ELECTRONIC DEVICE - In the method a first layer, particularly of amorphous silicon, is deposited on the surface of a substrate with trenches. Part of this surface is covered with a protective layer. The first layer is thereafter maskless removed with a dry etching treatment on the substrate surface while it is kept within the trench. | 12-10-2009 |
| 20100117612 | DC-TO-DC CONVERTER COMPRISING A RECONFIGURABLE CAPACITOR UNIT - The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A switching unit is provided that comprises a plurality of switching elements electrically interconnected between different capacitor-electrode layers of the trench filling. A control unit is connected with the switching unit and configured to generate and provide to the switching unit respective control signals for forming a respective one of a plurality of multi-capacitor configurations using the capacitor-electrode layers of the trench filling. | 05-13-2010 |
| 20100225278 | CHARGE PUMP DC-DC CONVERTER COMPRISING SOLID STATE BATTERIES - An electronic device is provided which comprises a DC-DC converter. The DC-DC converter comprises at least one solid-state rechargeable battery (B | 09-09-2010 |
| 20100230787 | ELECTRIC DEVICE COMPRISING AN IMPROVED ELECTRODE - The invention relates to an electric device including an electric element, the electric element comprising a first electrode ( | 09-16-2010 |
| 20100244189 | INTEGRATION SUBSTRATE WITH A ULTRA-HIGH-DENSITY CAPACITOR AND A THROUGH-SUBSTRATE VIA - An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least four electrically conductive capacitor-electrode layers in an alternating arrangement with dielectric layers. —The capacitor-electrode layers are alternatingly connected to a respective one of two capacitor terminals provided on the first or second substrate side. The trench capacitor and the through-substrate via are formed in respective trench openings and via openings in the semiconductor substrate, which have an equal lateral extension exceeding 10 micrometer. This structure allows, among other advantages, a particularly cost-effective fabrication of the integration substrate because the via openings and the trench openings in the substrate can be fabricated simultaneously. | 09-30-2010 |
| 20110163630 | CAPACITIVE MICROMACHINE ULTRASOUND TRANSDUCER - The patent application discloses a capacitive micromachined ultrasound transducer, comprising a silicon substrate; a cavity; a first electrode, which is arranged between the silicon substrate and the cavity; wherein the first electrode is arranged under the cavity; a membrane, wherein the membrane is arranged above the cavity and opposite to the first electrode; a second electrode, wherein the second electrode is arranged above the cavity and opposite to the first electrode; wherein the second electrode is arranged in or close to the membrane, wherein the first electrode and the second electrode are adapted to be supplied by a voltage; and a first isolation layer, which is arranged between the first electrode and the second electrode, wherein the first isolation layer comprises a dielectric. It is also described a system for generating or detecting ultrasound waves, wherein the system comprises a transducer according to the patent application. Further, it is disclosed a method for manufacturing a transducer according to the patent application, wherein the transducer is manufactured with the help of a CMOS manufacturing process, wherein the transducer can be manufactured as a post-processing feature during a CMOS process. | 07-07-2011 |
