| Patent application number | Description | Published |
|---|
| 20080210927 | Buffer architecture formed on a semiconductor wafer - In one embodiment, the present invention includes an apparatus for forming a transistor that includes a silicon (Si) substrate, a dislocation filtering buffer formed over the Si substrate having a first buffer layer including gallium arsenide (GaAs) nucleation and buffer layers and a second buffer layer including a graded indium aluminium arsenide (InAlAs) buffer layer, a lower barrier layer formed on the second buffer layer formed of InAlAs, and a strained quantum well (QW) layer formed on the lower barrier layer of indium gallium arsenide (InGaAs). Other embodiments are described and claimed. | 09-04-2008 |
| 20090218596 | Buffer layers for device isolation of devices grown on silicon - Various embodiments provide a buffer layer that is grown over a silicon substrate that provides desirable device isolation for devices formed relative to III-V material device layers, such as InSb-based devices, as well as bulk thin film grown on a silicon substrate. In addition, the buffer layer can mitigate parallel conduction issues between transistor devices and the silicon substrate. In addition, the buffer layer addresses and mitigates lattice mismatches between the film relative to which the transistor is formed and the silicon substrate. | 09-03-2009 |
| 20090298266 | DOPANT CONFINEMENT IN THE DELTA DOPED LAYER USING A DOPANT SEGREGRATION BARRIER IN QUANTUM WELL STRUCTURES - A device grade III-V quantum well structure and method of manufacture is described. Embodiments of the present invention enable III-V InSb quantum well device layers with defect densities below 1×10 | 12-03-2009 |
| 20090315018 | Methods of forming buffer layer architecture on silicon and structures formed thereby - Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a GaSb nucleation layer on a substrate, forming a Ga(Al)AsSb buffer layer on the GaSb nucleation layer, forming an In | 12-24-2009 |
| 20110045659 | SEMICONDUCTOR BUFFER ARCHITECTURE FOR III-V DEVICES ON SILICON SUBSTRATES - A composite buffer architecture for forming a III-V device layer on a silicon substrate and the method of manufacture is described. Embodiments of the present invention enable III-V InSb device layers with defect densities below 1×10 | 02-24-2011 |
| Patent application number | Description | Published |
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| 20100056673 | Polyoxymethylene Compositions and Articles Made From These - Polyoxymethylene compositions that include 90 to 99.9 weight percent of at least one polyacetal polymer and 0.1 to 10 wt % of at least one polysaccharide substantially free of acidic material selected from the group consisting of amylopectin from maize and soluble starch where the weight percent of the polymer and the polysaccharide are based on their combined weight. Articles made from these compositions. | 03-04-2010 |
| 20100084617 | STATIC DISSIPATIVE POLYACETAL COMPOSITIONS - Polyacetal compositions comprising polyacetal, electroconductive carbon black, and substituted urea provide a combination of good static dissipation properties, good thermal stability during processing, and good stability to contact with fuel. | 04-08-2010 |
| 20110060116 | PROCESS FOR THE SYNTHESIS OF FLUORINATED ETHERS OF AROMATIC ACIDS - New fluorinated ethers of aromatic acids and diesters are disclosed. These compositions can be applied to, e.g., fibers, yarns, carpets, garments, films, molded parts, paper and cardboard, stone, and tile to impart soil, water and oil resistance. By incorporating the fluorinated ethers of aromatic acids, or diesters thereof, into polymer backbones, more lasting soil, water and oil resistance, as well as improved flame retardance, can be achieved. | 03-10-2011 |
| 20110060117 | PROCESS FOR THE SYNTHESIS OF FLUORINATED ETHERS OF AROMATIC ACIDS - Fluorinated ethers of aromatic acids are produced from halogenated aromatic acids in a reaction mixture containing a copper (I) or copper (II) source and a diamine ligand that coordinates to copper. The fluorinated ethers of aromatic acids made using the process described herein can be applied to, e.g., fibers, yarns, carpets, garments, films, molded parts, paper and cardboard, stone, and tile to impart soil, water and oil resistance. By incorporating the fluorinated ethers of aromatic acids, or diesters thereof, into polymer backbones, more lasting soil, water and oil resistance, as well as improved flame retardance, can be achieved. | 03-10-2011 |
| 20110060118 | PROCESS FOR THE SYNTHESIS OF FLUORINATED ETHERS OF AROMATIC ACIDS - Fluorinated ethers of aromatic acids are produced from halogenated aromatic acids in a reaction mixture containing a copper (I) or copper (II) source and a Schiff base ligand that coordinates to copper. The fluorinated ethers of aromatic acids made using the process described herein can be applied to, e.g., fibers, yarns, carpets, garments, films, molded parts, paper and cardboard, stone, and tile to impart soil, water and oil resistance. By incorporating the fluorinated ethers of aromatic acids, or diesters thereof, into polymer backbones, more lasting soil, water and oil resistance, as well as improved flame retardance, can be achieved. | 03-10-2011 |
| 20110060161 | PROCESS FOR THE SYNTHESIS OF FLUORINATED ETHERS OF AROMATIC ACIDS - Fluorinated ethers of aromatic acids are produced from halogenated aromatic acids in a reaction mixture containing a copper (I) or copper (II) source and a diketone ligand that coordinates to copper. The fluorinated ethers of aromatic acids made using the process described herein can be applied to, e.g., fibers, yarns, carpets, garments, films, molded parts, paper and cardboard, stone, and tile to impart soil, water and oil resistance. By incorporating the fluorinated ethers of aromatic acids, or diesters thereof, into polymer backbones, more lasting soil, water and oil resistance, as well as improved flame retardance, can be achieved. | 03-10-2011 |
| 20110065892 | PROCESS FOR THE SYNTHESIS OF FLUORINATED ETHERS OF AROMATIC ACIDS - Fluorinated ethers of aromatic acids are produced from halogenated aromatic acids in a reaction mixture containing a copper (I) or copper (II) source and an amino acid ligand that coordinates to copper. The fluorinated ethers of aromatic acids made using the process described herein can be applied to, e.g., fibers, yarns, carpets, garments, films, molded parts, paper and cardboard, stone, and tile to impart soil, water and oil resistance. By incorporating the fluorinated ethers of aromatic acids, or diesters thereof, into polymer backbones, more lasting soil, water and oil resistance, as well as improved flame retardance, can be achieved. | 03-17-2011 |
| 20110147680 | THERMOPLASTIC ELECTROCHROMIC MATERIALS - Disclosed are electrochromic materials containing a film-forming polymer with a T | 06-23-2011 |
| 20110149366 | ELECTROCHROMIC DEVICES - Disclosed are electrochromic devices incorporating electrochromic materials containing a film-forming polymer with a T | 06-23-2011 |
