Patent application number | Description | Published |
20080245414 | METHODS FOR FORMING A PHOTOVOLTAIC DEVICE WITH LOW CONTACT RESISTANCE - An improved PV solar cell structure and methods for manufacturing the same are provided. In one embodiment, a photovoltaic device includes a first photoelectric conversion unit, a first transparent conductive oxide layer and a first microcrystalline silicon layer disposed between and in contact with the photoelectric conversion unit and the transparent conductive oxide layer. In another embodiment, a method of forming a photovoltaic solar cell includes providing a substrate having a first transparent conductive oxide layer disposed thereon, depositing a first microcrystalline silicon layer on the transparent conductive oxide layer, and forming a first photoelectric conversion unit on the microcrystalline silicon layer. | 10-09-2008 |
20120100312 | METHODS FOR ENHANCING TANTALUM FILAMENT LIFE IN HOT WIRE CHEMICAL VAPOR DEPOSITION PROCESSES - Methods for depositing films using hot wire chemical vapor deposition (HWCVD) processes are provided herein. In some embodiments, a method of operating an HWCVD tool may include providing hydrogen gas (H | 04-26-2012 |
20120295419 | METHODS FOR DEPOSITING A MATERIAL ATOP A SUBSTRATE - Methods for depositing a material atop a substrate are provided herein. In some embodiments, a method of depositing a material atop a substrate may include exposing a substrate to a silicon containing gas and a reducing gas; increasing a flow rate of the silicon containing gas while decreasing a flow rate of the reducing gas to form a first layer; and depositing a second layer atop the first layer. | 11-22-2012 |
20130160794 | METHODS AND APPARATUS FOR CLEANING SUBSTRATE SURFACES WITH ATOMIC HYDROGEN - Methods and apparatus for cleaning substrate surfaces are provided herein. In some embodiments, a method of cleaning a surface of a substrate may include providing a hydrogen containing gas to a first chamber having a plurality of filaments disposed therein; flowing a current through the plurality of filaments to raise a temperature of the plurality of filaments to a process temperature sufficient to decompose at least some of the hydrogen containing gas; and cleaning the surface of the substrate by exposing the substrate to hydrogen atoms formed from the decomposed hydrogen containing gas for a period of time. | 06-27-2013 |
20130228933 | BEOL Interconnect With Carbon Nanotubes - An integrated circuit with BEOL interconnects may comprise: a substrate including a semiconductor device; a first layer of dielectric over the surface of the substrate, the first layer of dielectric including a filled via for making electrical contact to the semiconductor device; and a second layer of dielectric on the first layer of dielectric, the second layer of dielectric including a trench running perpendicular to the longitudinal axis of the filled via, the trench being filled with an interconnect line, the interconnect line comprising cross-linked carbon nanotubes and being physically and electrically connected to the filled via. Cross-linked CNTs are grown on catalyst particles on the bottom of the trench using growth conditions including a partial pressure of precursor gas greater than the transition partial pressure at which carbon nanotube growth transitions from a parallel carbon nanotube growth mode to a cross-linked carbon nanotube growth mode. | 09-05-2013 |
20130337615 | POLYMER HOT-WIRE CHEMICAL VAPOR DEPOSITION IN CHIP SCALE PACKAGING - Embodiments of the present invention provide a vapor phase organic polymer film deposited using a CVD process at low temperature during a process sequence for wafer-level chip scale packaging (WL-CSP), including system-in package (SiP), Package-on-Package (PoP) and Package-in-Package (PiP). | 12-19-2013 |
20140113084 | SHOWERHEAD DESIGNS OF A HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD) CHAMBER - Embodiments of process chambers and methods for performing HWCVD processes within such process chambers and depositing a thin film from two or more source compounds on a surface of a substrate are provided. In some embodiments, the process chamber includes a showerhead assembly disposed between a metal filament assembly and a substrate processing zone. The showerhead assembly includes a showerhead body and a dual-zone face plate with a plurality of first channels and second channels therein. A first source compound is delivered through the metal filament assembly to form radicals of the first source compound and pass through the first channels into the substrate processing zone without forming any plasma. A second source compound is delivered through the showerhead body into the second channels of the dual-zone face plate without passing through the metal filament assembly and without contacting the radicals until reaching the substrate processing zone. | 04-24-2014 |
20140162194 | CONFORMAL SACRIFICIAL FILM BY LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION TECHNIQUE - Methods and apparatus for forming a sacrificial during a novel process sequence of lithography and photoresist patterning are provided. In one embodiment, a method of processing a substrate having a resist material and an anti-reflective coating material thereon includes depositing an organic polymer layer over the surface of the substrate inside a process chamber using a CVD technique. The CVD technique includes flowing a monomer into a processing region of the process chamber, flowing an initiator into the processing region through one or more filament wires heated to a temperature between about 200° C. and about 450° C., and forming the organic polymer layer. In addition, the organic polymer layer is ashable and can be removed from the surface of the substrate when the resist material is removed from the surface of the substrate. | 06-12-2014 |
20140179110 | METHODS AND APPARATUS FOR PROCESSING GERMANIUM CONTAINING MATERIAL, A III-V COMPOUND CONTAINING MATERIAL, OR A II-VI COMPOUND CONTAINING MATERIAL DISPOSED ON A SUBSTRATE USING A HOT WIRE SOURCE - Methods and apparatus for processing a germanium containing material, a III-V compound containing material, or a II-VI compound containing material disposed on a substrate using a hot wire source are provided herein. In some embodiments, a method for processing a material disposed on a substrate, wherein the material is at least one of a germanium containing material, a III-V compound containing material, or a II-VI compound containing material, includes providing a hydrogen containing gas to a first process chamber having a plurality of filaments; flowing a current through the plurality of filaments to raise a temperature of the plurality of filaments to a first temperature sufficient to decompose at least a portion of the hydrogen containing gas to form hydrogen atoms; and treating a surface of an exposed material on a substrate by exposing the material to hydrogen atoms formed by the decomposition of the hydrogen containing gas. | 06-26-2014 |
20140248754 | CONTROLLED AIR GAP FORMATION - A method of forming and controlling air gaps between adjacent raised features on a substrate includes forming a silicon-containing film in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming carbon-containing material on top of the silicon-containing film and forming a second film over the carbon-containing material using a flowable deposition process. The second film fills an upper region between the adjacent raised features. The method also includes curing the materials at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. The thickness and number layers of films can be used to control the thickness, vertical position and number of air gaps. | 09-04-2014 |