| Patent application number | Description | Published |
|---|
| 20100140618 | Sensor and method for the manufacture thereof - A sensor includes at least one micro-patterned diode pixel that has a diode implemented in, on, or under a diaphragm, and the diaphragm in turn being implemented above a cavity. The diode is contacted via supply leads that are implemented at least in part in, on, or under the diaphragm, and the diode is implemented in a polycrystalline semiconductor layer. The diode is implemented by way of two low-doped diode regions or at least one low-doped diode region. At least parts of the supply leads are implemented by way of highly doped supply lead regions of the shared polycrystalline semiconductor layer. | 06-10-2010 |
| 20100300204 | ACCELERATION SENSOR - A micromechanical acceleration sensor includes a substrate with a substrate surface arranged in one plane, a first counter-electrode arranged on the substrate surface, a second counter-electrode arranged on the substrate surface, and a rocking mass arranged above the first counter-electrode and the second counter-electrode. The rocking mass is in this case connected to the substrate via a torsion spring which permits tilting of the rocking mass about an axis of rotation. Further provided are a first compensation counter-electrode arranged on the substrate surface and a second compensation counter-electrode arranged on the substrate surface. In addition, a first compensation electrode is arranged above the first compensation counter-electrode and a second compensation electrode is arranged above the second compensation counter-electrode. | 12-02-2010 |
| 20100327883 | INDUCTIVE DELTA C EVALUATION FOR PRESSURE SENSORS - A measuring device has a sensor unit and an evaluation unit which is electrically isolated from the sensor unit by a partition wall. The sensor unit includes a first capacitive sensor which is electrically connected to a first coil to form a first oscillating circuit, and a reference capacitor which is electrically connected to a second coil to form a second oscillating circuit. The evaluation unit includes a third coil which is inductively coupled to the first coil and the second coil, and the evaluation unit is designed to determine and output a beat frequency of a beat signal which is inductively injected into the third coil by the first oscillating circuit and the second oscillating circuit. | 12-30-2010 |
| 20110048131 | MICROMECHANICAL COMPONENT - A micromechanical component which has a substrate, a seismic mass, which is deflectably situated on the substrate, and a stop structure for limiting a deflection of the seismic mass in a direction away from the substrate. The stop structure is situated on the substrate and has a limiting section for limiting the deflection of the seismic mass, which is in a plane with the seismic mass. Furthermore, a method for manufacturing a micromechanical component is described. | 03-03-2011 |
| 20110048137 | Pressure sensor - A simple to implement contacting variant makes it possible to create a reliable electrical connection between the sensor element and the evaluation electronics of a pressure sensor, including at least one media-resistant sensor element, evaluation electronics in the form of at least one additional component connected electrically to the sensor element, and a multipart housing, the sensor element being situated in a first housing area having at least one pressure connection, and the evaluation electronics being situated in a second sealed housing area which is separated from the first housing area by a separating wall. The electrical connection between the sensor element and the evaluation electronics is implemented in the form of media-resistant bonding wires which are guided from the first into the second housing area through the bonded joint area between the separating wall and an additional housing part. | 03-03-2011 |
| 20110068419 | MICROMECHANICAL SYSTEM - A micromechanical system includes a substrate, a first conductive layer situated above the substrate and a second conductive layer situated above the first conductive layer. The first conductive layer and the second conductive layer are conductively interconnected by a connecting element. The connecting element has a conductive edge surrounding a nonconductive region. | 03-24-2011 |
| 20110127674 | LAYER STRUCTURE FOR ELECTRICAL CONTACTING OF SEMICONDUCTOR COMPONENTS - A layer structure for the electrical contacting of a semiconductor component having integrated circuit elements and integrated connecting lines for the circuit elements, which is suitable in particular for use in a chemically aggressive environment and at high temperatures, i.e., in so-called “harsh environments,” and is simple to implement. This layer structure includes at least one noble metal layer, in which at least one bonding island is formed, the noble metal layer being electrically insulated from the substrate of the semiconductor component by at least one dielectric layer, and having at least one ohmic contact between the noble metal layer and an integrated connecting line. The noble metal layer is applied directly on the ohmic contact layer. | 06-02-2011 |
| 20110169125 | METHOD FOR FORMING TRENCHES IN A SEMICONDUCTOR COMPONENT - A method is described for creating at least one recess in a semiconductor component, in particular a micromechanical or electrical semiconductor component, having the following steps: applying at least one mask to the semiconductor component, forming at least one lattice having at least one or more lattice openings in the mask over the recess to be formed, the lattice opening or lattice openings being formed as a function of the etching rate and/or the dimensioning of the recess to be formed; forming the recess below the lattice. | 07-14-2011 |
| 20110169143 | METHOD FOR ESTABLISHING AND CLOSING A TRENCH OF A SEMICONDUCTOR COMPONENT - A method for establishing and closing at least one trench of a semiconductor component, in particular a micromechanical or electrical semiconductor component, having the following steps: applying at least one metal layer over the trench to be formed; forming a lattice having lattice openings in the at least one metal layer over the trench to be formed; forming the trench below the metal lattice, and closing the lattice openings over the trench. | 07-14-2011 |
| 20110169169 | Method for providing and connecting two contact areas of a semiconductor component or a substrate, and a substrate having two such connected contact areas - A method for providing and connecting a first contact area to at least one second contact area on a substrate, in particular in the case of a semiconductor component, which includes providing at least one insulation layer on the substrate, forming an opening in the at least one insulation layer over at least one insulation trench of a first contact area, applying at least one metal layer to the insulation layer, forming the first and second contact areas in the at least one metal layer and at least one printed conductor between the two contact areas, and forming the insulation trench. | 07-14-2011 |
