Patent application number | Description | Published |
20080272413 | Light-Sensitive Component - In order to detect light with in particular a high blue component, the inversion zone and the space charge zone of a CMOS-like structure are used. In conjunction with an at least partly transparent gate electrode, in particular a transparent conductive oxide or a patterned gate electrode, it becomes possible to absorb the short-wave component of incident light within the inversion zone and to reliably conduct away the generated charge carrier pairs to first and second contacts. During operation, a control voltage is applied to the gate electrode with a magnitude that generates a continuous inversion zone below the optionally patterned gate electrode. | 11-06-2008 |
20080277749 | Light-Sensitive Component with Increased Blue Sensitivity, Method for the Production Thereof, and Operating Method - A light-sensitive component which has a semiconductor junction between a thin relatively highly doped epitaxial layer and a relatively lightly doped semiconductor substrate. Outside a light incidence window, an insulating layer is arranged between epitaxial layer and semiconductor substrate. In this case, the thickness of the epitaxial layer is less than 50 nm, with the result that a large proportion of the light quanta incident in the light incidence window can be absorbed in the lightly doped semiconductor substrate. | 11-13-2008 |
20100038678 | Photodiode with a Reduced Dark Current and Method for the Production Thereof - A photodiode in which a pn junction is formed between the doped region (DG) formed in the surface of a crystalline semiconductor substrate and a semiconductor layer (HS) deposited above said doped region. An additional doping (GD) is provided in the edge region of the doped zone, by means of which additional doping the pn junction is shifted deeper into the substrate (SU). With the greater distance of the pn junction from defects at phase boundaries that is achieved in this way, the dark current within the photodiode is reduced. | 02-18-2010 |
20100123254 | Semiconductor Device and a Method for Making the Semiconductor Device - An opening ( | 05-20-2010 |
20100314762 | Semiconductor Substrate with Through-Contact and Method for Production Thereof - The interlayer connection of the substrate is formed by a contact-hole filling ( | 12-16-2010 |
20110260284 | Method for Producing a Semiconductor Component, and Semiconductor Component - In the insulation layer ( | 10-27-2011 |
20120286430 | Method of Producing a Semiconductor Device and Semiconductor Device Having a Through-Wafer Interconnect - A substrate ( | 11-15-2012 |
20130221539 | METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT WITH A THROUGH-CONTACT AND SEMICONDUCTOR COMPONENT WITH THROUGH-CONTACT - Through the intermetal dielectric ( | 08-29-2013 |
20140038410 | METHOD OF PRODUCING A SEMICONDUCTOR DEVICE HAVING AN INTERCONNECT THROUGH THE SUBSTRATE - A semiconductor substrate ( | 02-06-2014 |
20140191413 | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE COMPRISING A CONDUCTOR LAYER IN THE SEMICONDUCTOR BODY AND SEMICONDUCTOR BODY | 07-10-2014 |
20140203340 | PHOTODIODE AND PRODUCTION METHOD - The photodiode has a p-type doped region ( | 07-24-2014 |
20140367862 | SEMICONDUCTOR DEVICE WITH INTERNAL SUBSTRATE CONTACT AND METHOD OF PRODUCTION - The semiconductor device comprises a substrate ( | 12-18-2014 |